DE1957717C3 - Verfahren zur Herstellung einer Cermet Dünnschicht Ausscheidung in 1966593 - Google Patents

Verfahren zur Herstellung einer Cermet Dünnschicht Ausscheidung in 1966593

Info

Publication number
DE1957717C3
DE1957717C3 DE19691957717 DE1957717A DE1957717C3 DE 1957717 C3 DE1957717 C3 DE 1957717C3 DE 19691957717 DE19691957717 DE 19691957717 DE 1957717 A DE1957717 A DE 1957717A DE 1957717 C3 DE1957717 C3 DE 1957717C3
Authority
DE
Germany
Prior art keywords
ceramic material
metal
cermet
tantalum
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19691957717
Other languages
German (de)
English (en)
Other versions
DE1957717B2 (de
DE1957717A1 (de
Inventor
Frank David Newport News Va. Banks
Donald Jex Trenton N.J. Sharp
Richard David Allentown Pa. Sutch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1957717A1 publication Critical patent/DE1957717A1/de
Publication of DE1957717B2 publication Critical patent/DE1957717B2/de
Application granted granted Critical
Publication of DE1957717C3 publication Critical patent/DE1957717C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/262—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by electrolytic treatment, e.g. anodic oxydation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE19691957717 1968-11-19 1969-11-17 Verfahren zur Herstellung einer Cermet Dünnschicht Ausscheidung in 1966593 Expired DE1957717C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77696268A 1968-11-19 1968-11-19
US78284468A 1968-12-11 1968-12-11

Publications (3)

Publication Number Publication Date
DE1957717A1 DE1957717A1 (de) 1970-05-27
DE1957717B2 DE1957717B2 (de) 1973-04-05
DE1957717C3 true DE1957717C3 (de) 1973-10-25

Family

ID=27119262

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691957717 Expired DE1957717C3 (de) 1968-11-19 1969-11-17 Verfahren zur Herstellung einer Cermet Dünnschicht Ausscheidung in 1966593

Country Status (6)

Country Link
BE (1) BE741842A (enExample)
DE (1) DE1957717C3 (enExample)
FR (1) FR2023634A1 (enExample)
GB (1) GB1293140A (enExample)
NL (1) NL144422B (enExample)
SE (1) SE364591B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7018352A (enExample) * 1969-12-23 1971-06-25
JPS4853292A (enExample) * 1971-11-08 1973-07-26
KR960005321B1 (ko) * 1990-04-24 1996-04-23 가부시끼가이샤 히다찌세이사꾸쇼 박막저항체를 갖는 전자회로소자 및 그 제조방법

Also Published As

Publication number Publication date
GB1293140A (en) 1972-10-18
NL6917306A (enExample) 1970-05-21
DE1957717B2 (de) 1973-04-05
NL144422B (nl) 1974-12-16
DE1957717A1 (de) 1970-05-27
SE364591B (enExample) 1974-02-25
BE741842A (enExample) 1970-05-04
FR2023634A1 (enExample) 1970-08-21

Similar Documents

Publication Publication Date Title
DE2601656C2 (de) Verfahren zum Herstellen eines hochohmigen Cermet-Schichtwiderstandes und Cermet-Schichtwiderstand
DE1515308B2 (de) Kathodenzerstäubungsverfahren zum Aufbringen von dünnen Schichten auf Substrate
DE2300813C3 (de) Verfahren zum Herstellen eines verbesserten Dünnschicht-Kondensators
DE2021264A1 (de) Verfahren fuer die Herstellung von diskreten RC-Anordnungen
DE1490927B2 (de) Verfahren zur herstellung eines schichtwiderstandselementes unter verwendung von tantalnitrid
DE3630393A1 (de) Verfahren zur herstellung eines platin-widerstandsthermometers und dadurch hergestelltes platin-widerstandsthermometer
DE1465702A1 (de) Verfahren zur Haltbarmachung eines schwer schmelzbaren duennschichtigen Metallwiderstandes
DE1515300A1 (de) Vorrichtung zur Herstellung hochwertiger duenner Schichten durch Kathodenzerstaeubung
DE1957717C3 (de) Verfahren zur Herstellung einer Cermet Dünnschicht Ausscheidung in 1966593
EP0154696A1 (de) Verfahren zur Kontrolle und Regelung der Zusammensetzung und der Schichtdicke von metallisch leitenden Legierungsschichten während ihrer Herstellung
DE19605097A1 (de) Eingekapseltes Kontaktmaterial und Herstellungsverfahren für dieses und Herstellungsverfahren und Verwendungsverfahren für einen eingekapselten Kontakt
DE102015006057A1 (de) Schichtwiderstand mit einem kohlenstoffhaltigen Widerstandsmaterial und Verfahren zu dessen Herstellung
DE1275221B (de) Verfahren zur Herstellung eines einen Tunneleffekt aufweisenden elektronischen Festkoerperbauelementes
DE1490950A1 (de) Zinn-Oxyd-Widerstand
DE2019091A1 (de) Verfahren zur Herstellung stabiler Duennfilmwiderstaende
DE1953070B2 (de) Verfahren zum herstellen eines tantaloxinitridschichtwiderstandelements
DE3205919C1 (de) Verfahren zur Herstellung von Festelektrolytschichten fuer galvanische Zellen
DE2356419C3 (de) Verfahren zum Herstellen von Widerstandsschichten aus Aluminium-Tantal-Legierungen durch Kathodenzerstäubung
DE68920741T2 (de) Verfahren zur Herstellung eines leitenden, durchsichtigen Films.
DE102009033930B4 (de) Verfahren zum Aufbringen einer Widerstandsschicht in Form eines Edelmetall-Dünnfilms auf ein Substrat und Verfahren zur Herstellung eines Temperaturmessfühlers
DE2262022C2 (de) Verfahren zur Herstellung von aufgestäubten Widerstandsschichten aus Tantal-Aluminium-Legierungen
DE1790082B2 (de) Metallschicht-widerstandselement und verfahren zu dessen herstellung
DE1615030B2 (de) Aus einer isolierunterlage mit hierauf aufgebrachten duennen tantal film aufgebaute duennfilmschaltung
DE2546675C3 (de) Verfahren zum Herstellen einer Dünnschichtschaltung
DE3614947C2 (de) Thermokopf und Verfahren zu dessen Herstellung

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)