DE1925929A1 - Verfahren zum chemischen Niederschlagen von relativ dicken Schichten aus isotropem Bornitrid aus dem Dampf - Google Patents

Verfahren zum chemischen Niederschlagen von relativ dicken Schichten aus isotropem Bornitrid aus dem Dampf

Info

Publication number
DE1925929A1
DE1925929A1 DE19691925929 DE1925929A DE1925929A1 DE 1925929 A1 DE1925929 A1 DE 1925929A1 DE 19691925929 DE19691925929 DE 19691925929 DE 1925929 A DE1925929 A DE 1925929A DE 1925929 A1 DE1925929 A1 DE 1925929A1
Authority
DE
Germany
Prior art keywords
gaseous
substrate
reaction
boron nitride
diborane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691925929
Other languages
German (de)
English (en)
Inventor
Kinter Malcolm L
Ira Weissman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE1925929A1 publication Critical patent/DE1925929A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE19691925929 1968-05-31 1969-05-21 Verfahren zum chemischen Niederschlagen von relativ dicken Schichten aus isotropem Bornitrid aus dem Dampf Pending DE1925929A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73334868A 1968-05-31 1968-05-31

Publications (1)

Publication Number Publication Date
DE1925929A1 true DE1925929A1 (de) 1970-09-10

Family

ID=24947241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691925929 Pending DE1925929A1 (de) 1968-05-31 1969-05-21 Verfahren zum chemischen Niederschlagen von relativ dicken Schichten aus isotropem Bornitrid aus dem Dampf

Country Status (4)

Country Link
US (1) US3561920A (https=)
DE (1) DE1925929A1 (https=)
FR (1) FR2014148A1 (https=)
GB (1) GB1264676A (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571484B2 (https=) * 1973-07-04 1982-01-11
US3986822A (en) * 1975-02-27 1976-10-19 Union Carbide Corporation Boron nitride crucible
DE2740129A1 (de) * 1976-09-18 1978-03-23 Claude John Lancelot Hunt Verfahren und vorrichtung zur metallbedampfung
DE2718518C3 (de) * 1977-04-26 1984-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Abscheiden einer Schicht auf der Innenseite von Hohlräumen eines Werkstückes
FR2475519A1 (fr) * 1980-02-12 1981-08-14 Thomson Csf Procede de fabrication de nitrure de bore isotrope
US4913887A (en) * 1982-04-15 1990-04-03 National Institute For Researches In Inorganic Materials Production of boron nitride
EP0149044B1 (en) * 1983-11-11 1987-05-13 Research Development Corporation of Japan Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
US4695476A (en) * 1985-06-06 1987-09-22 Westinghouse Electric Corp. Process for coating the internal surface of zirconium tubes with neutron absorbers
GB2192643A (en) * 1986-07-14 1988-01-20 Universal High Technologies Method of coating refractory vessels with boron nitride
EP0426800A1 (en) * 1989-04-27 1991-05-15 Battelle Memorial Institute Heat-sink structures with increased heat dissipation capacity and methods for the production of such structures
JP2822536B2 (ja) * 1990-02-14 1998-11-11 住友電気工業株式会社 立方晶窒化ホウ素薄膜の形成方法
US5399380A (en) * 1993-12-10 1995-03-21 United Technologies Corporation Bonding of two elastomeric materials by means of isocyanate vapors
RU2160224C1 (ru) * 1999-09-08 2000-12-10 Общество с ограниченной ответственностью "Ромбонит" Способ получения пиролитического нитрида бора
US7510742B2 (en) * 2005-11-18 2009-03-31 United Technologies Corporation Multilayered boron nitride/silicon nitride fiber coatings
KR101405256B1 (ko) * 2011-09-16 2014-06-10 엠파이어 테크놀로지 디벨롭먼트 엘엘씨 그래핀 결함 변경
JP5779721B2 (ja) 2011-09-16 2015-09-16 エンパイア テクノロジー ディベロップメント エルエルシー グラフェン欠陥を修正するための方法及びシステム

Also Published As

Publication number Publication date
FR2014148A1 (https=) 1970-04-17
GB1264676A (https=) 1972-02-23
US3561920A (en) 1971-02-09

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