WO1990012769A2 - Heat-sink structures with increased heat dissipation capacity and methods for the production of such structures - Google Patents
Heat-sink structures with increased heat dissipation capacity and methods for the production of such structures Download PDFInfo
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- WO1990012769A2 WO1990012769A2 PCT/EP1990/000731 EP9000731W WO9012769A2 WO 1990012769 A2 WO1990012769 A2 WO 1990012769A2 EP 9000731 W EP9000731 W EP 9000731W WO 9012769 A2 WO9012769 A2 WO 9012769A2
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- whiskers
- ain
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention concerns improved heat-sink substrate structures with enhanced heat dissipation capacity.
- the invention also concerns a method to manufacture such novel heat-sink structures, more particularly A1N ceramic substrates for electronic applications.
- Heat-sinks are very important, to dissipate heat in elec ⁇ tronic equipment and other appliances because undissipated heat can unduly raise the operating temperature of electronic circuits and damage some of the sensitive components thereof. Hence it is essential that power circuits be coupled to effi ⁇ cient heat-sinks which will remove the excess heat generated during circuit operation, i.e. the circuits temperature will be maintained under safe limits.
- Heat-sinks are generally boards or other shapes made of good thermally conductive materials.
- the thermally conductive materials should also possess appropriate electrical properties. Table I below lists some of the most common thermally conductive materials used for making heat-sinks together with their main electrical properties. The data also include single crystal silicon for comparison purposes.
- Aluminum nitride overcomes the main limitation as heat sink in electronic applications of alumina and beryllia ceramics, that is the thermal expansion mismatch between the ceramic and the deposited silicon which may result into dis ⁇ tortion or breakage under operating conditions. Yet, A1N has an average thermal coefficient of expansion (TCE) of 2.65 W/m°C which closely matches that of Si (3.6).
- A1N offers a unique combination of properties, including high thermal conductivity and electrical resistivi ⁇ ty, which makes it a highly desirable ceramic for chip packag- ing, e.g. VLSI (very large scale integrated circuits) and VHSIC (very high scale integrated circuits).
- VLSI very large scale integrated circuits
- VHSIC very high scale integrated circuits
- AIN In high power devices, EC-logic circuits and laser diode applications with less requirements under TCE matching, AIN nevertheless offers advantages over Al ⁇ O., in view of its much higher conductivity and over beryllia because of its easy and non-hazardous handling.
- Heat-sinks made from ceramics with good thermal conducti ⁇ vity can be manufactured by different techniques including for instance the pressing and sintering of ceramic powders or the deposition of ceramic layers by chemical vapor deposition (CVD).
- CVD chemical vapor deposition
- AIN substrates can be manufactured in .high density shapes by high pressure sintering.
- this method has drawbacks: for instance the densifying aids used in sintering usually contain oxygen which decreases the thermal conducti ⁇ vity of the end product.
- the densifying aids are decreased or suppressed to obviate the aforementioned drawback, sintering becomes difficult and expensive as densi- fication requires very high pressures and temperatures.
- J-62 113.770 discloses articles of AIN made by CVD having density of
- the articles are made by reacting gaseous Al ha- lides and ammonia at 600 - 1200°C under pressures below 100
- Trialkylaluminum compounds and nitrogen can also be used in the CVD making of AIN.
- J-62 176.996 (SHARP) reports the formation of aluminum nitride on a substrate layer of ⁇ -SiC by reacting trimethyl-aluminum with nitrogen at 900 - 1500°C using hydrogen as a carrier.
- J-63 151 686 discloses making an AIN board by CVD on a supporting plate using a gaseous Al- compound and NH 3 at 600 - 1400°C under a pressure of 0.1 to 50 kPa. Then the board is separated from the base substrate.
- J-62 036 089 also discloses a similar method. Here a crystalline ceramic film is formed by CVD on the surface of a base material having a desired shape; then the film is sepa- rated from the base and at least one additional film of the same ceramic material is grown by CVD on the surface of the separated film. This is applicable to many ceramics including AIN, Si 3 4 , TiN, BN, ZrN, HfN, SiC, WC, TiC, 1 2 0 3 , Si0 2 , Zr0 2 , ZnO.
- heat-sink substrates compri ⁇ sing acicular particles, e.g. monocrystal whiskers of thermal ⁇ ly conductive materials embedded in a compact phase of the same or another thermally conductive material have superior heat-dissipation properties.
- This is another key factor of the present invention as defined in the annexed claims. Re ⁇ garding the content of the claims, it should be mentioned that FR-A-2.014.148 (VARIAN) discloses a CVD method for making thick deposits of boron nitride on a substrate. The reactants are diborane and ammonia, the temperature is above 120°C and the pressure below atmospheric.
- the method of preparation disclosed in this document consists in the tape casting of a slurry of Al ⁇ O ⁇ plus the AIN needles and, thereafter, sinter the tape cast film.
- the acicular particles, e.g. whiskers are tape cast alone, i.e. without the embedding matrix as, actually, the embedding ma ⁇ trix is provided afterwards by infiltration or otherwise.
- US-A-4,725,456 discloses a technique in which a mineral component is CVD deposited within the interstices of a porous structure by infiltration with gaseous reactants. This leads to the formation of whiskers or fine particles in the gaps of the porous structure or coatings on the inside surface of the pores. It is however not reported that this technique can lead to the filling of the pores with foreign material, i.e. to a fully densified structure no- longer porous.
- US-A-4,777,155 discloses a sintered AIN base with whiskers of SiC.
- the material has improved heat conductivity and can be used as heatsink (col. 2, line 259.
- the components are co-sintered using densification aids which, obviously, will remain distributed within the matrix; hence such matrix with foreign materials distributed therein cannot be considered to be the same as the "compact dense thermally conductive ceramic" of claim 1 of the instant application which refers to a homogeneous phase without dispersed additio ⁇ nal sintering aids.
- US-A-3,833,389 looks very similar to that of the previous document, as it discloses sintered compacts of AIN or Si 3 N 4 with SiC, BN or C (possibly as whiskers, see col. 2, line 14) together with a third compo ⁇ nent (generally a metal oxide). It does not appear that the coiftposites disclosed in this document can be used as heat- sinks.
- a thin porous web or core preform (defined hereafter as a bait) is pressed from AIN powder and/or whiskers and consolidated by infiltrating the pores with AIN made by CVD. Then, when the desired density for the bait has .been obtained, dense AIN is grown on the infiltrated bait up to the desired thickness.
- This method is economical because making a non-densified porous bait from AIN powder by pressing and, preferably sintering at relatively low tempera ⁇ ture, is not expensive and infiltrating the pores and even ⁇ tually growing dense AIN on the infiltrated bait can be done in the same CVD apparatus without shut-down.
- coarser grades i.e. relatively cheap grades
- AIN powders can be used, e.g. in he range of about 0.5 to 5 ⁇ m gauge. Since the aim is to achieve a porous film bait, no densifying additives are required because no densification is required at this stage and also the temperatures and pressures can stay moderate, i.e. temperatures in the 800 - 1500°C range and pressures in the range of 0.1 - 2 T/cm 2 are sufficient.
- porous bait i.e. tape casting
- a slurry of the coarse AIN powder and/or whiskers is made in an organic solvent, together with binders and/or plasticizers, and the slurry is cast over a flexible, plastic tape, for instance with a doctor blade to form of film of about 50 ⁇ m to 500 ⁇ m. Then the film is dried and cut to pieces of the desired sbstrate size, the organics therein are burned and the remaining green is heated around 1000 - 1500°C at ordinary pressure to consolidate the structure. The pieces can then be subjected to infiltration under CVD conditions.
- the heat-sink substrate made with whiskers has the form of a laminate in which at least one composite core layer of non-woven monocrystalline ceramic whiskers is embedded in a dense ceramic matrix and integrally bound to at least one cladding layer of compact and dense thermally conductive ceramic.
- the layer of non-woven whiskers can be made by conventional means, i.e. a slurry of the whiskers can be prepared in an appropriate solvent together with a binder and the slurry is molded or cast in the shape of the core laye , for instance by draining and drying on a porous support or on a tape (tape casting), or by pressing.
- the layer is therafter dried to form a green and heated to densify; if necessary the green can be heated to sintering temperature for further consolidation.
- the dense matrix in which the whiskers are embedded as well as the cladding layer or layers can be achieved by lami ⁇ nating the core layer with one or more layers of powdered ceramics followed by pressing and sintering.
- a preferred me ⁇ thod however is to impregnate the core layer with a ceramic made by CVD and, therafter, build the cladding layer or layers thereon also by CVD.
- the consolidated core layer (defined hereafter as a preform or bait layer) is reinforced by infil ⁇ trating the voids between the whiskers with a ceramic depo ⁇ sited by CVD.
- CVD conditions suitable for infiltration are discussed hereafter.
- AIN for convenience, in the following des ⁇ cription, reference will mainly be made to AIN by CVD but it is understood that other ceramics deposited by CVD are conve ⁇ nient as well.
- the use of whis- kers subjected before hand to surface treatment, in whole or part, is also possible.
- the whiskers can be coated, partly or totally before use, with a layer or with crystals of property modifying materials, for instance mate ⁇ rials with particular hardness, or particularly good thermal conductivity, or other physical properties.
- the whiskers to be used for achieving the mat preform are first subjected to diamond coating by standard techniques.
- One preferred technique is diamond deposition by pla.sma activated CH 4 /H 2 mixtures. This will be detailed hereafter in this specification.
- diamond crystals grow on the surface of the whiskers which modification further enhances heat dissipation properties and also helps consolidating the preform by entanglement.
- the composites made with entangled diamond coated whiskers packed in a compact ceramic have outstanding cutting and abrading properties and can be also used for high duty machi ⁇ ning and grinding purposes e.g. super hard grinder wheels and cutting tool surfaces.
- a slurry of the ceramic whiskers is made in an organic solvent, together with binders and/or plasticizers, and the slurry is cast over a flexible plastic tape, for instance with a doctor blade to form a film of about 50 ⁇ m to 500 ⁇ m. Then the film is dried and cut to pieces of the desired substrate size, the organics therein are burned and, if desired, the remaining green is heated around 1000 - 1500°C at ordinary pressure to consolidate the structure. The pieces can then be subjected to infiltration reinforcement and embedment in dense ceramics under CVD conditions.
- Figure 1 is a schematic representation of an apparatus for CVD operation which is used for infiltration and embedment purposes and for growing dense ceramic layers on the infil ⁇ trated preforms.
- Figure 2 is a schematic side view of a holder for holding the baits subjected to embedment by infiltration and subse ⁇ quent growing.
- Figure 3 is a plan view of the holder of figure 2.
- Figure 4 is a graph showing the rate of deposition of AIN made by CVD plotted against the % (v/v) of HCl in the input gases, the remaining operational parameters (i.e. A1C1-, vapor 4.6%, NH 3 6.9%, H 2 balance, pressure 10 Torr, temperature 935°C, total flow 500 cm /min) being kept constant.
- Figure 5 is a schematic view of a microwave apparatus for growing diamond crystals on monocrystalline ceramic whiskers.
- Figure 6 is a microphograph of a ceramic whisker whose surface is coated with diamond crystals.
- the apparatus represented in figure 1 comprises a tubular oven enclosure 1 made of heat resisting materials, e.g. quartz, steel or ceramics, surrounded by an electric heating mantle 2.
- This heating mantle can include an electric resistor heater or a high frequency heating coil acting on a susceptor within the enclosure.
- the susceptor can be used to hold the samples to be CVD treated.
- the enclosure is equipped with gas inlets 3a and 3b, a gas outlet 4 and a perforated holder plate 5 supported by a rod 6.
- the gas inlet 3a communicates with an A1C1 3 source 7 which is swept by a current of gas (H 2 ) schematized by arrow 8 and which can be heated to a desired temperature by a mantle 9 in which a heating fluid is circulated (arrows).
- H 2 current of gas
- Inlet 3b is connected to a source of ammonia schematized by arrow 10. Ammonia and hydrogen are supplied from pressure cylinders (not shown) via flow-meters to control gas supply rate.
- the output 4 which is used to remove the exhaust gases is connected to a vacuum pump.
- the pressure is controlled by an electrically driven valve 11 and by a needle valve 12 which by-passes the electric valve 11.
- the temperature of the enclosure 1 can be controlled by means of thermocouple 12 and a regulated supply 13.
- the tempe ⁇ rature of the plate 5 can also be measured by a gauge 14, so hat the CVD temperature near the samples to be infiltrated or coated can be checked.
- gauges optical pyrometers can be used.
- the holder plate 5 which, in case of HF induction heating i ' made of an electrically conductive material such as gra ⁇ phite or TiN, supports a holder frame 21 (see figs 2 and 3) which consists of a refractory hollow body with top openings 22 and side openings 23. These openings 22 and 23 correspond to through-holes in holder 21.
- the preform baits of pressed non-acicular AIN particles or of non-woven whiskers 24 to be infiltrated and subsequently coated with dense AIN are placed to rest over the openings 22. Unused openings 22 can be plugged with removable plugs (not shown) , if desired.
- the holder frame is rectangular and smaller in size than plate 5. Hence the CVD gases in the enclosure can penetrate through openings 23 and reach the underside of the substrates 24 from below as well as the top thereof from above. Hence, in this embodiment, infil ⁇ tration (and coating) can proceed on both sides simultaneous ⁇ ly.
- the holder frame 21 is shaped like plate 5, which means that the passage of the gases through plate 4 is impeded by these obstacles and by creating a pres ⁇ sure differential between the top and bottom parts of the reactor 1, the input gases can be forced through the structures, i.e. through the meshes of the porous substrate or non-woven preforms 24 to reach (through the perforated plate 5) the bottom of the enclosure 1 and the output opening 4.
- the structures i.e. through the meshes of the porous substrate or non-woven preforms 24 to reach (through the perforated plate 5) the bottom of the enclosure 1 and the output opening 4.
- the preform 24 of agglomerated non-acicular AIN particles and/or of non-woven whiskers to be infiltrated are made by standard methods, e.g. press-moulding and sintering or tape casting as mentioned above.
- conditions are set up to provide densification by infiltration of the bait with AIN by CVD.
- the conditions are:
- dry hydrogen chloride is required to limit the reaction rate of AIN formation and thus promote infiltration into the voids between the particles and/or the whiskers, i.e to prevent the AIN produced by the reaction of A1C1 3 and NH- vapors to only deposit on the external part of the particles or whiskers.
- Figure 4 illustrates the relation between hydrogen chlo ⁇ ride volume content in the input gases and deposition rate of AIN (mg/hr and ⁇ m/hr), the other operational parameters (ex ⁇ cept H 2 %) being constant, and show that preferred volume con ⁇ centrations of HCl range between 1 and 20%. Naturally, since the amount of HCl can also be zero for dense AIN growing purposes, the concentration of HCl can also vary between zero and 1.
- the A1C1 3 source 7 is heated and swept by hydrogen, whereby A1C1 3 vapors are entrained in correct proportion through input 3a.
- the correct proportions of NH 3 and H 2 are fed through input 3b (via flow-meters not shown) and the composition is delivered into the enclosure, whereby it comes into contact with the samples 24 resting on holder 21.
- the gas mixture also penetrates the inside of holder 21 through ope ⁇ nings 23 and contacts the underside of the non-woven core preforms 24, whereby infiltration can proceed from both sides of the samples.
- the residual gases then will cross plate 5 through the perforations and be drawn by pumps (not shown) through valve 12 or valves 11 and 12.
- traps to collect corrosive reactants or products are inser ⁇ ted on the exhaust line 4 so that any deleterious substance can be retained therein for preserving the environment.
- the overall reaction here is 1C1 3 + NR, —> AIN + 3HC1 which occurs to a significant extent within the voids between the particles or whiskers of the preforms.
- AIN formed progressively fills the voids in the open structure and progressive densification occurs.
- the densified bait can be coated on one or both sides with cry ⁇ stalline AIN grown by CVD.
- the HCl flow is strongly reduced or cut off completely, while the input of A1C1 3 vapor and NH 3 are increased by at least about 50% to about 3 to 6 fold.
- the temperature and pressures need not be modified but can be changed if desired. Under these conditions AIN growing rates of 50 - 100 ⁇ m/hr can be obtained, the AIN provided 15
- whiskers predominant orientation in the preforms has an influence on optimalizing the heat dissipation capacity; this is probably due to some preferential direction of heat migration within the crystals of the whiskers.
- the orientation of the whiskers in the core preform can be controlled to some extent by the casting or molding conditions, i.e. centrifugal casting will result in partial whiskers alignement. Also for ⁇ cing the whiskers slurry through a narrow tube.will produce some alignment in the direction of flow.
- Diamond deposition can be carried out in an apparatus schematically illustrated in figure 5.
- This apparatus comprises a holder tube 31 housing a refractory plate 32 which supports mono crystal whiskers on which diamond is to be deposited.
- the whiskers 33 are placed as a loose heap on the plate 32 so that methane and hydrogen (see arrow) can flow freely through the piled whiskers.
- the apparatus also comprises a microwave guide 34 crossed by tube 31 in such a position that the microwave energy in wave-guide 34 resonates and creates a gas discharge in tube 31 to which the whiskers 33 are subjected.
- the microwave guide 34 is powered by a generator 35, the output of which is tuned by a series of plungers 36a, 36b, 36c.
- the reflected power is detected by probes 37 and measured by gauges 38. Optimized energy transfer (by correct adjustment of plungers 36a to 36c) results in minimal reflected power as monitored on gauges 38.
- Element 39 is an insulator.
- Figure 6 illustrates the results obtained after 7 hrs operation on SiC whiskers under the following conditions:
- the whiskers were glowing dark red.
- the diamond crystals were a few ⁇ m size.
- the preforms are thickened by growing thick dense AIN under the conditions mentioned before. It should be noted that the coarse surface condition of the preform bait after infiltration which derives from using coar ⁇ se AIN powders and/or whiskers for making the bait results in excellent adhesion thereto of the dense AIN reinforcing layer ultimately grown in the third phase of the method, this being an additional advantage thereof.
- deposition conditions are then set up in function to the desired results in conformity with usual practice for the deposition of these materials. This need not be discussed further here because the appropriate conditions can be easily adapted by skilled operators from the teaching of the prior art depending on the desired needs.
- the whiskers need not be selected from only one type of whiskers but they can be made of blends or admixtures of two or more whiskers components. Changing the composition of the whisker blends may vary the heat dissipa ⁇ tion capacity of the heat-sink structure, hence by adjusting the proportions in the blend, skilled ones can devise heat- sink substrates with predetermined heat dissipation capacity. Also, particles of ceramics, e.g. AIN, can be admixed with the whiskers prior to making the starting preforms. This is one 13
- the A1C1-, supply shown in figure 1 is replaced by a wash-bottle filled with a liquid silicon compound, e.g. (CH 3 ) 2 SiCl 2 and swept with argon. Also only hydrogen is introduced via input 3b.
- the (CH 3 ) 2 SiCl 2 bottle is kept at a given temperature by a thermostat control ⁇ led bath.
- the input rate of the vapors of the Si compound can be controlled by the temperature of the heating bath. In this case, the reaction is:
- the preferred conditions for SiC deposition are: tempera ⁇ ture of reactor 800 - 1200°C; pressure 2 - 200 Torr; percent of (CH 3 ) 2 S Cl 2 in the carrier gase 1 - 15% v/v; flow rate 5 - 50 standard ml/min per cm of preform material.
- the holding plate 5 and the samples to be infiltrated are arranged in the enclosure to create a pressure drop between the upper and lower parts of the enclosure. This becomes possible when the holder plate 5 matches with the inner cross-section of the enclosure 1 which geometry impedes the flow of gases at the sample site.
- a pressure gradient of 100 - 190 Torr across the samples to be infiltrated can be established. This pressure differential forces the gaseous reactants through the porous structure and speeds-up the in ⁇ filtration procedure.
- the input gases compositions and tempe ⁇ ratures are in the same range as for embodiment 1 above.
- the needle valve 12 is closed and the electric valve controllably closes and opens at a given rhythm, thus providing a pulsating variable reduced pressure in the enclosure.
- This pulsed pressure variation establishes a correspondingly varying pressure gradient in the enclosure which helps the reactants to penetrate the preform porous Example 1
- the viscosity of the slurry after milling was about 4600 cP.
- a 100 - 300 ⁇ m layer of this paste was deposited by mean of an applicater (doctor's blade) on a 20 mm wide flexible Mylar strip and the solvent was evaporated in air at 25°C. Under evaporation, the sintering composition was converted to a flexible film which was peeled off the Mylar strip and cut into slabs 24, 10 - 40 mm long. The slabs ere placed on a refractory holder 21 of the kind illustrated in fig 2 and 3.
- This holder consists of a frame 1 of porous refractory material, for instance of clay or china, provided with holes 22 and 23.
- the holder is supported by the refractory base plate 5.
- Removable ceramic plugs (not indicated in the draw ⁇ ing) are inserted in the holes 23, the upper surface of which is flush with the upper surface of the holder frame 21.
- the slabs 24 are layered over the holes 23 with the edges resting over the frame surface and the body resting over the plug surface. This arrangement prevents warping of the slabs during calcination.
- the frames with slabs were brought into an oven and heated slowly (10°C/hr) up to 500°C under a controlled atmos ⁇ phere (N- + 0 usually) containing only 10% of oxygen so that the organic components of the slab were burned although preventing oxidation of the AIN component.
- the burned slabs are fragile but, with the help of the present holder, they can be further processed with minimal risks of breaking.
- the slabs (having a porosity of about 40% by volume) can be subjected to mechanical consolidation by presintering at 1500°C under an inert atmosphere (N ? ); however due to the handling performances of the present holder, this step can be omitted if desired and the preforms 24 can be infiltrated directly.
- the holder with burned slabs 24 was then transferred to a CVD apparatus but before so, the frame 1 with the slabs was lifted from the under-plate 5 retaining the plugs, thus emp ⁇ tying the holes 23 from the underside. By this operation, both sides of slabs 24 become available to be contacted by the CVD gaseous reactants.
- the input gas composition was changed to: A1C1 3 4% (by increasing correspondingly the temperature of the A1C1 3 source) , H 3 7% (by increasing the rate from the NH-. pressure cylinder); H 2 89%.
- the rates of the input components can be controlled individually by means of rotameters (not shown on the drawing) .
- the total gas input was unchanged as well as the enclosure pressure and temperature. Under these conditions, the deposition rate was about 80 ⁇ m/hr. So the deposition process was stopped after about 3 hrs, whereby the initial preform bait thickness had increased by about 500 ⁇ m (0.7 mm final thickness).
- the thermal conductivity was excel ⁇ lent.
- the suspen ⁇ sion was evaporated under vacuum at 70°C (Rotovap) and the dry powder residue was sieved on a 300 ⁇ m mesh grating.
- Tape cast preforms were prepared as described in Example 1 (porosity 40%, thickness about 0.2 ⁇ m) and placed on a holder in the CVD vacuum enclosure. Gas flow between the upper and lower parts of the enclosure were not impeded, hence upper and lower pressures were virtually identical in a matter of seconds.
- the in ⁇ side pressure was periodically varied by acting on the elec ⁇ tric valve 11 (main valve 12 is closed) , this being controlled by an external electronic regulator not shown. Actually the pressure was set to 50 Torr for 1 min, followed by 30 sec at 7 Torr. The composition of input gases changed in accordance with the pressure changes, i.e. although NH 3 (2%) and HCl (4%) remained constant, A1C1 3 varied from 0.5% (lower pressure stage) to 8.8% (higher pressure stage). The carrier gas was H 2 as usual. After about 50 hrs under the above conditions, the infiltration was considered complete.
- the dense AIN growing rate on both sides of the infiltrated preform was about 90 ⁇ m/hr.
- the operations were stopped after 3 hrs, whereby a 750 ⁇ m thick disc of excellent thermal conductivity was obtained.
- a vertical cylindrical quartz reactor about 250 mm long and 80 mm diameter surrounded by a HF coil was used.
- the reactors ends were capped with copper closures with central openings; the lower opening was for initial evacuation (vacuum pump) and the upper opening for exhaust of reaction products.
- the bottom closure was provided with input ducts for reactant gases opening into the bottom of a vertically oriented nozzle consisting of two coaxial tubes, a central tube connected to one input duct and an external annular tube connected to another input duct.
- the reactor contained a central substrate tube for the deposition of whiskers about 180 mm long and 50 mm diameter surrounded by a graphite susceptor and supported on a zirconia washer placed slightly above the upper opening of the afore ⁇ mentioned nozzle.
- the central opening in the washer was adap ⁇ ted to ensure proper mixing of the gas components issuing from the nozzle and passing through it.
- the zirconia washer rested on a ceramic tubular spacer held on an internal flange of the lower copper closure.
- the central tube was of iron, one input was fed with argon and the other with a mixture of hydrogen and dimethyl-dichlorsilane (DMDS).
- DMDS dimethyl-dichlorsilane
- Table II below indicates suitable operating conditions for producing SiC whiskers which formed on the surface of the inner tube and were removed afterwards by scraping.
- Dioctyl-phthalate plasticizer Fluka 80032
- PEG polyethylene glycol
- PVB polyvinylbutyral binder
- a 100 - 300 ⁇ m layer of this slurry was deposited by means of an applicator (doctor's blade) on a 20 mm wide flexi ⁇ ble Mylar strip and the solvent was evaporated in air at 25°C. By evaporation, the slurry composition was converted to a flexible non-woven layer which was peeled off the Mylar strip and cut into mats 24, 10 - 40 mm long. The mats were placed on a refractory holder fixture 21 of the kind illustrated in figures 2 and 3.
- This holder consists of a frame 21 of porous refractory material, for instance of alumina, mullite or alumino-sili- cate, provided with holes 22 and 23.
- the holder is supported by the refractory base plate 5.
- Removable ceramic plugs (not indicated in the drawing) are inserted in the holes 23, the upper surface of which is flush with the upper surface of the holder frame 21.
- the mats 24 are layered over the holes 23 with the edges resting over the frame surface and the body resting over the plug surface. This arrangement prevents war ⁇ ping of the mats during calcination.
- the frame with mats was brought into an oven and heated slowly (10°C/hr) up to 500°C under a controlled atmosphere (N « + 0 2 ) containing only 10% of oxygen so that the organic compo ⁇ nents of the mats were burned although preventing oxidation of the AIN component.
- N a controlled atmosphere
- the binders are replaced by other binders, e.g. polyisobutylene, which can be volatilized under vacuum or in an inert atmosphere, the aforementioned burning step can be avoided.
- the burned mats are fragile but, with the help of the present holder, they can be further processed with minimal risks of breaking.
- the mats 24 (having a porosity of about 40% by volume) can be subjected to mechanical consolidation by presintering at 1500°C under an inert atmosphere (N Mandarin); however due to the handling performances of the present.holder, this step can be omitted if desired and the mats 24 can be infil ⁇ trated directly.
- the holder with burned mats 24 was then transferred to a CVD apparatus but, before so, the frame 21 with the mats was lifted from its under-plate 5 retaining the plugs, thus emp ⁇ tying the holes 23 from the underside. By this operation, both sides of mats 24 become available to be contacted by the CVD gaseous reactants.
- the HCl input was turned off and the input gas composition was changed to : A1C1, 5% (by increasing correspondingly the ' temperature of the A1C1 3 source), NH 3 7% (by increasing the rate from the NH 3 pressure cylinder); - 88%.
- the rates of the input components can be controlled individually by means of flow-meters (not shown on the draw ⁇ ing) .
- the total gas input was unchanged as well as the enclo ⁇ sure pressure and temperature. Under these conditions, the deposition rate was about 40 ⁇ m/hr. So the deposition process was stopped after about 6 hrs, whereby the initial preform bait thickness had increased by about 500 ⁇ m (0.7 mm final thickness).
- the thermal conductivity was excellent and ex ⁇ ceeded that of a compact AIN substrate of comparable size.
- the suspension was drained in a filter under vacuum at
- the sample holder shape matched with the inner walls of the enclosure thus providing a barrier to the flowing of gases therein.
- a pressure gradient could be installed within the enclosure by proper adjustment of the suction pressure at the valve 12 and the input of supply gases at inputs 3a and 3b. Under this gradient of pressure, the reactant gases were forced through the porous structure of the non-woven preforms.
- Silicon carbide whiskers with deposited diamond were converted to non-woven mat preforms using the technique of Example 5.
- the heat conductivity of the obtained substrate was ex ⁇ cellent.
- Example SiC CVD deposition conditions were replaced by AIN CVD infiltration and growing conditions described in Examples 1 and 2, heat-sink substrates with excellent heat dissipation were obtained.
- SiC or AIN whiskers were replaced by whiskers of TiC, TiN, Ti(C,N), Si 3 ., TiB 2 or A1 2 0 3 (coated or not with diamond), substrates with excellent physical properties (heat conductivity, hardness, etc.) were obtained.
Abstract
Description
Claims
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1610/89-1 | 1989-04-27 | ||
CH1610/89A CH678525A5 (en) | 1989-04-27 | 1989-04-27 | Heat-sink structures with increased heat dissipation capacity |
EP89810833 | 1989-11-03 | ||
EP89810833.7 | 1989-11-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1990012769A2 true WO1990012769A2 (en) | 1990-11-01 |
WO1990012769A3 WO1990012769A3 (en) | 1990-12-13 |
Family
ID=25688155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1990/000731 WO1990012769A2 (en) | 1989-04-27 | 1990-04-26 | Heat-sink structures with increased heat dissipation capacity and methods for the production of such structures |
Country Status (2)
Country | Link |
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EP (1) | EP0426800A1 (en) |
WO (1) | WO1990012769A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5783877A (en) * | 1996-04-12 | 1998-07-21 | Anorad Corporation | Linear motor with improved cooling |
EP0999590A2 (en) * | 1998-11-05 | 2000-05-10 | Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. | Heat sink for electric and/or electronic devices |
US9120985B2 (en) | 2010-05-26 | 2015-09-01 | Exxonmobil Research And Engineering Company | Corrosion resistant gasifier components |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2014148A1 (en) * | 1968-05-31 | 1970-04-17 | Varian Associates | |
US3653830A (en) * | 1969-05-08 | 1972-04-04 | Tokyo Shibaura Electric Co | Method for manufacturing aluminum nitride fibers |
US3833389A (en) * | 1970-12-23 | 1974-09-03 | Tokyo Shibaura Electric Co | Heat resistant and strengthened composite materials and method for producing same |
US4256792A (en) * | 1980-01-25 | 1981-03-17 | Honeywell Inc. | Composite electronic substrate of alumina uniformly needled through with aluminum nitride |
EP0046605A2 (en) * | 1980-08-23 | 1982-03-03 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Arrangement for potential-independent heat dissipation |
US4725456A (en) * | 1985-03-28 | 1988-02-16 | Agency Of Industrial Science And Technology | Method for preparing mixture to be used for production of composite material |
US4777155A (en) * | 1985-09-30 | 1988-10-11 | Nkg Spark Plug Co., Ltd. | Sintered member of aluminum nitride base reinforced composite material |
EP0312419A1 (en) * | 1987-10-14 | 1989-04-19 | Association Pour La Recherche Et Le Developpement Des Methodes Et Processus Industriels (Armines) | Ceramic material of high thermal conductivity, its fabrication process and applications, particularly in electronics industry |
-
1990
- 1990-04-26 EP EP90906925A patent/EP0426800A1/en not_active Withdrawn
- 1990-04-26 WO PCT/EP1990/000731 patent/WO1990012769A2/en not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2014148A1 (en) * | 1968-05-31 | 1970-04-17 | Varian Associates | |
US3653830A (en) * | 1969-05-08 | 1972-04-04 | Tokyo Shibaura Electric Co | Method for manufacturing aluminum nitride fibers |
US3833389A (en) * | 1970-12-23 | 1974-09-03 | Tokyo Shibaura Electric Co | Heat resistant and strengthened composite materials and method for producing same |
US4256792A (en) * | 1980-01-25 | 1981-03-17 | Honeywell Inc. | Composite electronic substrate of alumina uniformly needled through with aluminum nitride |
EP0046605A2 (en) * | 1980-08-23 | 1982-03-03 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Arrangement for potential-independent heat dissipation |
US4725456A (en) * | 1985-03-28 | 1988-02-16 | Agency Of Industrial Science And Technology | Method for preparing mixture to be used for production of composite material |
US4777155A (en) * | 1985-09-30 | 1988-10-11 | Nkg Spark Plug Co., Ltd. | Sintered member of aluminum nitride base reinforced composite material |
EP0312419A1 (en) * | 1987-10-14 | 1989-04-19 | Association Pour La Recherche Et Le Developpement Des Methodes Et Processus Industriels (Armines) | Ceramic material of high thermal conductivity, its fabrication process and applications, particularly in electronics industry |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5783877A (en) * | 1996-04-12 | 1998-07-21 | Anorad Corporation | Linear motor with improved cooling |
EP0999590A2 (en) * | 1998-11-05 | 2000-05-10 | Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. | Heat sink for electric and/or electronic devices |
US6191944B1 (en) * | 1998-11-05 | 2001-02-20 | Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. | Heat sink for electric and/or electronic devices |
EP0999590A3 (en) * | 1998-11-05 | 2006-04-05 | Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. | Heat sink for electric and/or electronic devices |
US9120985B2 (en) | 2010-05-26 | 2015-09-01 | Exxonmobil Research And Engineering Company | Corrosion resistant gasifier components |
Also Published As
Publication number | Publication date |
---|---|
EP0426800A1 (en) | 1991-05-15 |
WO1990012769A3 (en) | 1990-12-13 |
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