DE1901320A1 - Verfahren zur Herstellung von hochohmigem Galliumarsenid - Google Patents
Verfahren zur Herstellung von hochohmigem GalliumarsenidInfo
- Publication number
- DE1901320A1 DE1901320A1 DE19691901320 DE1901320A DE1901320A1 DE 1901320 A1 DE1901320 A1 DE 1901320A1 DE 19691901320 DE19691901320 DE 19691901320 DE 1901320 A DE1901320 A DE 1901320A DE 1901320 A1 DE1901320 A1 DE 1901320A1
- Authority
- DE
- Germany
- Prior art keywords
- gallium arsenide
- arsenic
- boron oxide
- gallium
- synthesis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 30
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 18
- 230000008569 process Effects 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052785 arsenic Inorganic materials 0.000 claims description 27
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052810 boron oxide Inorganic materials 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000003786 synthesis reaction Methods 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 5
- 229910011255 B2O3 Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 16
- 229910052733 gallium Inorganic materials 0.000 description 16
- 239000003708 ampul Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000037230 mobility Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 244000089409 Erythrina poeppigiana Species 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 235000009776 Rathbunia alamosensis Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- LULLIKNODDLMDQ-UHFFFAOYSA-N arsenic(3+) Chemical compound [As+3] LULLIKNODDLMDQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 238000001730 gamma-ray spectroscopy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691901320 DE1901320A1 (de) | 1969-01-11 | 1969-01-11 | Verfahren zur Herstellung von hochohmigem Galliumarsenid |
| NL6916854A NL6916854A (enrdf_load_stackoverflow) | 1969-01-11 | 1969-11-07 | |
| FR7000116A FR2028145B1 (enrdf_load_stackoverflow) | 1969-01-11 | 1970-01-05 | |
| CH17370A CH525157A (de) | 1969-01-11 | 1970-01-08 | Verfahren zur Herstellung von hochohmigem Galliumarsenid |
| AT17670A AT295474B (de) | 1969-01-11 | 1970-01-09 | Verfahren zur Herstellung von hochohmigem halbisolierendem Galliumarsenid |
| SE31570A SE347166B (enrdf_load_stackoverflow) | 1969-01-11 | 1970-01-12 | |
| JP293970A JPS4815158B1 (enrdf_load_stackoverflow) | 1969-01-11 | 1970-01-12 | |
| GB135570A GB1286063A (en) | 1969-01-11 | 1970-01-12 | Improvements in or relating to the manufacture of high-resistance gallium arsenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691901320 DE1901320A1 (de) | 1969-01-11 | 1969-01-11 | Verfahren zur Herstellung von hochohmigem Galliumarsenid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1901320A1 true DE1901320A1 (de) | 1970-08-06 |
Family
ID=5722205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691901320 Pending DE1901320A1 (de) | 1969-01-11 | 1969-01-11 | Verfahren zur Herstellung von hochohmigem Galliumarsenid |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4815158B1 (enrdf_load_stackoverflow) |
| AT (1) | AT295474B (enrdf_load_stackoverflow) |
| CH (1) | CH525157A (enrdf_load_stackoverflow) |
| DE (1) | DE1901320A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1286063A (enrdf_load_stackoverflow) |
| NL (1) | NL6916854A (enrdf_load_stackoverflow) |
| SE (1) | SE347166B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59168272U (ja) * | 1983-04-25 | 1984-11-10 | 九州日立マクセル株式会社 | 電気かみそり |
| JPS649301U (enrdf_load_stackoverflow) * | 1987-07-08 | 1989-01-19 | ||
| CN119287492B (zh) * | 2024-09-26 | 2025-05-20 | 昆明理工大学 | 一种高压液封直拉法制备超高纯砷单晶棒工艺 |
-
1969
- 1969-01-11 DE DE19691901320 patent/DE1901320A1/de active Pending
- 1969-11-07 NL NL6916854A patent/NL6916854A/xx unknown
-
1970
- 1970-01-08 CH CH17370A patent/CH525157A/de not_active IP Right Cessation
- 1970-01-09 AT AT17670A patent/AT295474B/de active
- 1970-01-12 JP JP293970A patent/JPS4815158B1/ja active Pending
- 1970-01-12 SE SE31570A patent/SE347166B/xx unknown
- 1970-01-12 GB GB135570A patent/GB1286063A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6916854A (enrdf_load_stackoverflow) | 1970-07-14 |
| SE347166B (enrdf_load_stackoverflow) | 1972-07-31 |
| JPS4815158B1 (enrdf_load_stackoverflow) | 1973-05-12 |
| AT295474B (de) | 1972-01-10 |
| GB1286063A (en) | 1972-08-16 |
| CH525157A (de) | 1972-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2013576C3 (de) | Verfahren zum Aufbringen von dotierten und undotierten Kieselsäurefilmen auf Halbleiteroberflächen | |
| DE2019099C3 (de) | Verfahren zur Herstellung eines stabilen Oberflachenschutzes fur Halbleiterbauelemente | |
| DE1446161B2 (de) | Supraleitendes Bauelement und Verfahren zu seiner Herstellung | |
| DE1719493A1 (de) | Verfahren zur Herstellung von drahtfoermigen Koerpern (Haarkristallen) kreisfoermigen Querschnitts,die aus Siliciumcarbid-Einkristallen bestehen,und Gegenstaende aus Siliciumcarbid-Haarkristallen kreisfoermigen Querschnitts | |
| DE2840331A1 (de) | Verfahren zum aufbringen einer halbleitenden verbindung von elementen der gruppen iii und v des periodensystems | |
| DE1924825A1 (de) | Verfahren zum Niederschlagen eines Halbleitermaterials | |
| DE2122760A1 (enrdf_load_stackoverflow) | ||
| DE1901320A1 (de) | Verfahren zur Herstellung von hochohmigem Galliumarsenid | |
| DE1931417B2 (de) | Verfahren zur doppeldiffusion von halbleitermaterial | |
| DE3715231A1 (de) | Messvorrichtung zur bestimmung der temperatur von halbleiterkoerpern, verfahren zur herstellung der messvorrichtung und verfahren zur bestimmung der temperatur von halbleiterkoerpern waehrend temperprozessen | |
| DE1521950A1 (de) | Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Koerper aus Halbleitermaterial | |
| DE2018072A1 (enrdf_load_stackoverflow) | ||
| DE2021345A1 (de) | Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff | |
| DE1544206C3 (de) | Verfahren zum Herstellen von dotierten Galliumphosphid-Einkristallen mit Fotoaktivität | |
| DE1237400C2 (de) | Verfahren zum Vakuumaufdampfen eines feuchtigkeitsfesten isolierenden UEberzuges aufHalbleiterbauelemente, insbesondere auf Halbleiterbauelemente mit pn-UEbergang | |
| DE1244112B (de) | Verfahren zur Erzeugung einer Germanium- oder Siliciumschicht auf einer erhitzten Flaeche eines Substrats | |
| DE2820754C2 (de) | Radioaktive ↑5↑↑7↑ Co-Quelle | |
| DE1758751A1 (de) | Ofen zum Eindiffundieren von Stoerstellen in Halbleiterkoerpern | |
| DE1254428B (de) | Verfahren zum Herstellen lichtempfindlicher Bleiselenidschichten durch Aufdampfen imVakuum | |
| DE1769177C3 (de) | Verfahren zum Aufbringen einer Aluminiumsilikat-Schicht auf Halbleitermaterial | |
| DE905069C (de) | Verfahren zur Herstellung von Schmelzlingen aus Germanium | |
| DE2019162C (de) | Zinksulfidelement | |
| DE1917035A1 (de) | Dosimeterpraeparat und Verfahren zur Energieregelung | |
| DE1943550B2 (de) | Verfahren zur herstellung von hochreinem, insbesondere siliziumfreiem galliumarsenid | |
| DE1058634B (de) | Gasdiffusionsverfahren zur Herstellung eines Transistors |