DE1807105B2 - Treiberschaltung für Flip-Flops - Google Patents
Treiberschaltung für Flip-FlopsInfo
- Publication number
- DE1807105B2 DE1807105B2 DE19681807105 DE1807105A DE1807105B2 DE 1807105 B2 DE1807105 B2 DE 1807105B2 DE 19681807105 DE19681807105 DE 19681807105 DE 1807105 A DE1807105 A DE 1807105A DE 1807105 B2 DE1807105 B2 DE 1807105B2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- surface field
- effect transistor
- inverter
- inverter stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 claims description 46
- 230000000903 blocking effect Effects 0.000 description 20
- 239000000758 substrate Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011835 investigation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MCRWZBYTLVCCJJ-DKALBXGISA-N [(1s,3r)-3-[[(3s,4s)-3-methoxyoxan-4-yl]amino]-1-propan-2-ylcyclopentyl]-[(1s,4s)-5-[6-(trifluoromethyl)pyrimidin-4-yl]-2,5-diazabicyclo[2.2.1]heptan-2-yl]methanone Chemical compound C([C@]1(N(C[C@]2([H])C1)C(=O)[C@@]1(C[C@@H](CC1)N[C@@H]1[C@@H](COCC1)OC)C(C)C)[H])N2C1=CC(C(F)(F)F)=NC=N1 MCRWZBYTLVCCJJ-DKALBXGISA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
Landscapes
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7097367 | 1967-11-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1807105A1 DE1807105A1 (de) | 1969-07-10 |
| DE1807105B2 true DE1807105B2 (de) | 1970-03-26 |
Family
ID=13446956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681807105 Withdrawn DE1807105B2 (de) | 1967-11-06 | 1968-11-05 | Treiberschaltung für Flip-Flops |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3614476A (enrdf_load_stackoverflow) |
| DE (1) | DE1807105B2 (enrdf_load_stackoverflow) |
| FR (1) | FR1590531A (enrdf_load_stackoverflow) |
| GB (1) | GB1236069A (enrdf_load_stackoverflow) |
| NL (1) | NL6815729A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19502116A1 (de) * | 1995-01-24 | 1996-08-08 | Siemens Ag | MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5223712B2 (enrdf_load_stackoverflow) * | 1972-06-26 | 1977-06-25 | ||
| US3748498A (en) * | 1972-07-27 | 1973-07-24 | American Micro Syst | Low voltage quasi static flip-flop |
| US3812388A (en) * | 1972-09-28 | 1974-05-21 | Ibm | Synchronized static mosfet latch |
| JPS5856890B2 (ja) * | 1974-09-09 | 1983-12-17 | 日本電気株式会社 | トランジスタカイロ |
| US4333020A (en) * | 1979-05-23 | 1982-06-01 | Motorola, Inc. | MOS Latch circuit |
| US4577282A (en) * | 1982-02-22 | 1986-03-18 | Texas Instruments Incorporated | Microcomputer system for digital signal processing |
| US4558232A (en) * | 1982-02-22 | 1985-12-10 | Simpson Richard D | Level detector circuit for microcomputer devices |
| JP2833289B2 (ja) * | 1991-10-01 | 1998-12-09 | 日本電気株式会社 | アナログスイッチ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3292008A (en) * | 1963-12-03 | 1966-12-13 | Rca Corp | Switching circuit having low standby power dissipation |
| US3363115A (en) * | 1965-03-29 | 1968-01-09 | Gen Micro Electronics Inc | Integral counting circuit with storage capacitors in the conductive path of steering gate circuits |
| US3284782A (en) * | 1966-02-16 | 1966-11-08 | Rca Corp | Memory storage system |
-
1968
- 1968-10-31 GB GB51630/68A patent/GB1236069A/en not_active Expired
- 1968-11-04 FR FR1590531D patent/FR1590531A/fr not_active Expired
- 1968-11-04 US US772912A patent/US3614476A/en not_active Expired - Lifetime
- 1968-11-05 NL NL6815729A patent/NL6815729A/xx unknown
- 1968-11-05 DE DE19681807105 patent/DE1807105B2/de not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19502116A1 (de) * | 1995-01-24 | 1996-08-08 | Siemens Ag | MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip |
| DE19502116C2 (de) * | 1995-01-24 | 1998-07-23 | Siemens Ag | MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip |
| US5925905A (en) * | 1995-01-24 | 1999-07-20 | Siemens Aktiengesellschaft | MOS circuit configuration for switching high voltages on a semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6815729A (enrdf_load_stackoverflow) | 1969-05-08 |
| US3614476A (en) | 1971-10-19 |
| FR1590531A (enrdf_load_stackoverflow) | 1970-04-13 |
| GB1236069A (en) | 1971-06-16 |
| DE1807105A1 (de) | 1969-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |