DE1764757C3 - Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Gateelektrode - Google Patents

Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Gateelektrode

Info

Publication number
DE1764757C3
DE1764757C3 DE1764757A DE1764757A DE1764757C3 DE 1764757 C3 DE1764757 C3 DE 1764757C3 DE 1764757 A DE1764757 A DE 1764757A DE 1764757 A DE1764757 A DE 1764757A DE 1764757 C3 DE1764757 C3 DE 1764757C3
Authority
DE
Germany
Prior art keywords
layer
insulating layer
voltage
gate electrode
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1764757A
Other languages
German (de)
English (en)
Other versions
DE1764757B2 (de
DE1764757A1 (de
Inventor
Terry George Lebanon Athanas
David Mayne New Providence Griswold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1764757A1 publication Critical patent/DE1764757A1/de
Publication of DE1764757B2 publication Critical patent/DE1764757B2/de
Application granted granted Critical
Publication of DE1764757C3 publication Critical patent/DE1764757C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
DE1764757A 1967-08-02 1968-07-31 Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Gateelektrode Expired DE1764757C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65793067A 1967-08-02 1967-08-02

Publications (3)

Publication Number Publication Date
DE1764757A1 DE1764757A1 (de) 1972-02-03
DE1764757B2 DE1764757B2 (de) 1973-05-10
DE1764757C3 true DE1764757C3 (de) 1973-11-29

Family

ID=24639229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1764757A Expired DE1764757C3 (de) 1967-08-02 1968-07-31 Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Gateelektrode

Country Status (4)

Country Link
US (1) US3540925A (enExample)
DE (1) DE1764757C3 (enExample)
FR (1) FR1603354A (enExample)
GB (1) GB1190523A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822393B1 (enExample) * 1969-02-20 1973-07-05
US3903324A (en) * 1969-12-30 1975-09-02 Ibm Method of changing the physical properties of a metallic film by ion beam formation
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
JPS5213716B2 (enExample) * 1971-12-22 1977-04-16
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3849204A (en) * 1973-06-29 1974-11-19 Ibm Process for the elimination of interface states in mios structures
FR2235482A1 (en) * 1974-05-07 1975-01-24 Ibm Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props
US4001049A (en) * 1975-06-11 1977-01-04 International Business Machines Corporation Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
NL7710635A (nl) * 1977-09-29 1979-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4465529A (en) * 1981-06-05 1984-08-14 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US4958204A (en) * 1987-10-23 1990-09-18 Siliconix Incorporated Junction field-effect transistor with a novel gate
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
DE3852543T2 (de) * 1988-09-01 1995-07-06 Ibm Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2891203A (en) * 1954-03-23 1959-06-16 Sylvania Electric Prod Silicon rectifiers
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Also Published As

Publication number Publication date
FR1603354A (enExample) 1971-04-13
DE1764757B2 (de) 1973-05-10
GB1190523A (en) 1970-05-06
DE1764757A1 (de) 1972-02-03
US3540925A (en) 1970-11-17

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)