DE3852543T2 - Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung. - Google Patents

Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung.

Info

Publication number
DE3852543T2
DE3852543T2 DE3852543T DE3852543T DE3852543T2 DE 3852543 T2 DE3852543 T2 DE 3852543T2 DE 3852543 T DE3852543 T DE 3852543T DE 3852543 T DE3852543 T DE 3852543T DE 3852543 T2 DE3852543 T2 DE 3852543T2
Authority
DE
Germany
Prior art keywords
substrate
making
same
dielectric layer
thin dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852543T
Other languages
English (en)
Other versions
DE3852543D1 (de
Inventor
Wolfgang Euen
Dieter Dr Hagmann
Hans-Juergen Wildau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3852543D1 publication Critical patent/DE3852543D1/de
Publication of DE3852543T2 publication Critical patent/DE3852543T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/2822—Making the insulator with substrate doping, e.g. N, Ge, C implantation, before formation of the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
DE3852543T 1988-09-01 1988-09-01 Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung. Expired - Fee Related DE3852543T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88114239A EP0356557B1 (de) 1988-09-01 1988-09-01 Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
DE3852543D1 DE3852543D1 (de) 1995-02-02
DE3852543T2 true DE3852543T2 (de) 1995-07-06

Family

ID=8199252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852543T Expired - Fee Related DE3852543T2 (de) 1988-09-01 1988-09-01 Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung.

Country Status (4)

Country Link
US (1) US5051377A (de)
EP (1) EP0356557B1 (de)
JP (1) JPH0691185B2 (de)
DE (1) DE3852543T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5438022A (en) * 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
US6025280A (en) * 1997-04-28 2000-02-15 Lucent Technologies Inc. Use of SiD4 for deposition of ultra thin and controllable oxides
GB0013619D0 (en) * 2000-06-06 2000-07-26 Glaxo Group Ltd Sample container

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE146877C (de) *
US3540925A (en) * 1967-08-02 1970-11-17 Rca Corp Ion bombardment of insulated gate semiconductor devices
DE2314746C2 (de) * 1973-03-24 1983-11-17 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum thermischen Oxydieren von Silicium unter Zusatz einer Chlorkohlenstoffverbindung
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US4001049A (en) * 1975-06-11 1977-01-04 International Business Machines Corporation Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein
JPS5585041A (en) * 1978-12-22 1980-06-26 Hitachi Ltd Semiconductor device and its preparation
JPS56125847A (en) * 1980-03-07 1981-10-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Surface treatment of semiconductor
JPS56125846A (en) * 1980-03-07 1981-10-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Surface treatment of semiconductor
JPS60229372A (ja) * 1984-04-27 1985-11-14 Hitachi Ltd Ｍｉｓ型半導体装置及びその製造方法
US4701422A (en) * 1986-04-07 1987-10-20 Rockwell International Corporation Method of adjusting threshold voltage subsequent to fabrication of transistor
US4725560A (en) * 1986-09-08 1988-02-16 International Business Machines Corp. Silicon oxynitride storage node dielectric

Also Published As

Publication number Publication date
JPH0691185B2 (ja) 1994-11-14
EP0356557B1 (de) 1994-12-21
US5051377A (en) 1991-09-24
JPH02113527A (ja) 1990-04-25
EP0356557A1 (de) 1990-03-07
DE3852543D1 (de) 1995-02-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee