FR1603354A - - Google Patents

Info

Publication number
FR1603354A
FR1603354A FR1603354DA FR1603354A FR 1603354 A FR1603354 A FR 1603354A FR 1603354D A FR1603354D A FR 1603354DA FR 1603354 A FR1603354 A FR 1603354A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1603354A publication Critical patent/FR1603354A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR1603354D 1967-08-02 1968-07-25 Expired FR1603354A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65793067A 1967-08-02 1967-08-02

Publications (1)

Publication Number Publication Date
FR1603354A true FR1603354A (fr) 1971-04-13

Family

ID=24639229

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1603354D Expired FR1603354A (fr) 1967-08-02 1968-07-25

Country Status (4)

Country Link
US (1) US3540925A (fr)
DE (1) DE1764757C3 (fr)
FR (1) FR1603354A (fr)
GB (1) GB1190523A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2232083A1 (fr) * 1973-05-29 1974-12-27 Ibm
FR2235482A1 (en) * 1974-05-07 1975-01-24 Ibm Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822393B1 (fr) * 1969-02-20 1973-07-05
US3903324A (en) * 1969-12-30 1975-09-02 Ibm Method of changing the physical properties of a metallic film by ion beam formation
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
JPS5213716B2 (fr) * 1971-12-22 1977-04-16
US3849204A (en) * 1973-06-29 1974-11-19 Ibm Process for the elimination of interface states in mios structures
US4001049A (en) * 1975-06-11 1977-01-04 International Business Machines Corporation Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
NL7710635A (nl) * 1977-09-29 1979-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4465529A (en) * 1981-06-05 1984-08-14 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US4958204A (en) * 1987-10-23 1990-09-18 Siliconix Incorporated Junction field-effect transistor with a novel gate
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
EP0356557B1 (fr) * 1988-09-01 1994-12-21 International Business Machines Corporation Couche diélectrique fine sur un substrat et méthode pour former une telle couche

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2891203A (en) * 1954-03-23 1959-06-16 Sylvania Electric Prod Silicon rectifiers
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2232083A1 (fr) * 1973-05-29 1974-12-27 Ibm
FR2235482A1 (en) * 1974-05-07 1975-01-24 Ibm Eliminating interface states in MIOS structures - at low temp to avoid degradation of electrical props

Also Published As

Publication number Publication date
US3540925A (en) 1970-11-17
GB1190523A (en) 1970-05-06
DE1764757A1 (de) 1972-02-03
DE1764757B2 (de) 1973-05-10
DE1764757C3 (de) 1973-11-29

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Legal Events

Date Code Title Description
ST Notification of lapse