DE1764106A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE1764106A1
DE1764106A1 DE19681764106 DE1764106A DE1764106A1 DE 1764106 A1 DE1764106 A1 DE 1764106A1 DE 19681764106 DE19681764106 DE 19681764106 DE 1764106 A DE1764106 A DE 1764106A DE 1764106 A1 DE1764106 A1 DE 1764106A1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
layer
plate
another
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681764106
Other languages
German (de)
English (en)
Inventor
John Blake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1764106A1 publication Critical patent/DE1764106A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • H10D88/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W10/031
    • H10W10/30

Landscapes

  • Element Separation (AREA)
DE19681764106 1967-04-07 1968-04-03 Halbleitervorrichtung Pending DE1764106A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB05974/67A GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures

Publications (1)

Publication Number Publication Date
DE1764106A1 true DE1764106A1 (de) 1971-05-06

Family

ID=10068943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681764106 Pending DE1764106A1 (de) 1967-04-07 1968-04-03 Halbleitervorrichtung

Country Status (7)

Country Link
BE (1) BE713333A (enExample)
CH (1) CH468080A (enExample)
DE (1) DE1764106A1 (enExample)
FR (1) FR1559209A (enExample)
GB (1) GB1162565A (enExample)
NL (1) NL6804786A (enExample)
SE (1) SE331720B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
GB1548520A (en) 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US6143582A (en) 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules

Also Published As

Publication number Publication date
FR1559209A (enExample) 1969-03-07
NL6804786A (enExample) 1968-10-08
BE713333A (enExample) 1968-08-16
CH468080A (de) 1969-01-31
SE331720B (enExample) 1971-01-11
GB1162565A (en) 1969-08-27

Similar Documents

Publication Publication Date Title
DE68919636T2 (de) Ununterbrochene Matrix, deren Plattengrösse programmierbar ist.
DE1933731C3 (de) Verfahren zum Herstellen einer integrierten Halbleiterschaltung
DE2351761A1 (de) Monolithisch integrierte, in chips aufgeteilte halbleiterschaltungsanordnung
DE2518010A1 (de) Ic-halbleiterbauelement mit einer injektions-logikzelle
DE2334405B2 (de) Hochintegrierte (LSI-) Halbleiterschaltung und Verfahren zur Herstellung einer Vielzahl derartiger Halbleiterschaltungen
DE2212168A1 (de) Monolithisch integrierte halbleiterstruktur
DE2262297A1 (de) Monolithisch integrierbare, digitale grundschaltung
DE2137211A1 (de) Hybrider Leistungsbaustein
DE1284519B (de) Zusammengesetzte Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1924712C3 (de) Integrierter Dünnschicht-Abblockbzw. Entkopplungskondensator für monolithische Schaltungen und Verfahren zu seiner Herstellung
DE2556668A1 (de) Halbleiter-speichervorrichtung
DE1764106A1 (de) Halbleitervorrichtung
DE1194500B (de) Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen
DE3851175T2 (de) Bipolartransistor mit Heteroübergängen.
DE1574651B2 (de) Monolithisch integrierte Flip-Flop-Speicherzelle
DE1901807C3 (de) Verfahren zum Herstellen einer monolithisch integrierten Halbleiterschaltung mit integrierter Versorgungsspannungszuführung
DE3917303C2 (enExample)
DE3786693T2 (de) Programmierbarer Kontaktfleck.
DE3005367C2 (enExample)
DE2627922A1 (de) Halbleiterbauteil
DE2046053B2 (de) Integrierte Schaltung
EP0317806B1 (de) Integrierte Schaltungsanordnung mit einer Kapazität
DE19806555A1 (de) Halbleiterbauelement
DE2101279A1 (de) Integrierter, lateraler Transistor
DE1769271C3 (de) Verfahren zum Herstellen einer Festkörperschaltung