DE1619949A1 - Verfahren zur Herstellung einer integrierten Schaltung - Google Patents

Verfahren zur Herstellung einer integrierten Schaltung

Info

Publication number
DE1619949A1
DE1619949A1 DE19671619949 DE1619949A DE1619949A1 DE 1619949 A1 DE1619949 A1 DE 1619949A1 DE 19671619949 DE19671619949 DE 19671619949 DE 1619949 A DE1619949 A DE 1619949A DE 1619949 A1 DE1619949 A1 DE 1619949A1
Authority
DE
Germany
Prior art keywords
silicon
impurities
layer
integrated circuit
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671619949
Other languages
German (de)
English (en)
Inventor
Kurt Huebner
Victor Kohl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre Electronique Horloger SA
Original Assignee
Centre Electronique Horloger SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electronique Horloger SA filed Critical Centre Electronique Horloger SA
Publication of DE1619949A1 publication Critical patent/DE1619949A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19671619949 1966-01-31 1967-01-26 Verfahren zur Herstellung einer integrierten Schaltung Pending DE1619949A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH126866A CH428947A (fr) 1966-01-31 1966-01-31 Procédé de fabrication d'un circuit intégré

Publications (1)

Publication Number Publication Date
DE1619949A1 true DE1619949A1 (de) 1970-07-30

Family

ID=4206417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671619949 Pending DE1619949A1 (de) 1966-01-31 1967-01-26 Verfahren zur Herstellung einer integrierten Schaltung

Country Status (8)

Country Link
AT (1) AT262383B (enExample)
BE (1) BE693141A (enExample)
CH (1) CH428947A (enExample)
DE (1) DE1619949A1 (enExample)
FR (1) FR1509644A (enExample)
GB (1) GB1117713A (enExample)
NL (1) NL6701103A (enExample)
SE (1) SE309453B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635024B2 (enExample) * 1973-12-14 1981-08-14
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
JPS5718341B2 (enExample) * 1974-12-11 1982-04-16
DE2632647A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Halbleiterbauelement mit passivierender schutzschicht
DE102007032577B4 (de) 2007-07-09 2011-07-21 ADC GmbH, 14167 Endverschluss für die Telekommunikations- und Datentechnik

Also Published As

Publication number Publication date
BE693141A (enExample) 1967-07-03
GB1117713A (en) 1968-06-19
SE309453B (enExample) 1969-03-24
CH428947A (fr) 1967-01-31
FR1509644A (fr) 1968-01-12
AT262383B (de) 1968-06-10
NL6701103A (enExample) 1967-08-01

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971