DE1590750B1 - Verfahren zur herstellung von isolierschichten fuer elektrischevorrichtungen - Google Patents

Verfahren zur herstellung von isolierschichten fuer elektrischevorrichtungen

Info

Publication number
DE1590750B1
DE1590750B1 DE19661590750 DE1590750A DE1590750B1 DE 1590750 B1 DE1590750 B1 DE 1590750B1 DE 19661590750 DE19661590750 DE 19661590750 DE 1590750 A DE1590750 A DE 1590750A DE 1590750 B1 DE1590750 B1 DE 1590750B1
Authority
DE
Germany
Prior art keywords
quartz
vapor
deposited
layer
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661590750
Other languages
German (de)
English (en)
Inventor
Marek Daniel Albert
Tassel James Henry Van
Kreiselmaier Kurt Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1590750B1 publication Critical patent/DE1590750B1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10Glass or silica
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Vapour Deposition (AREA)
DE19661590750 1965-10-01 1966-09-28 Verfahren zur herstellung von isolierschichten fuer elektrischevorrichtungen Pending DE1590750B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49233965A 1965-10-01 1965-10-01

Publications (1)

Publication Number Publication Date
DE1590750B1 true DE1590750B1 (de) 1971-04-22

Family

ID=23955878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661590750 Pending DE1590750B1 (de) 1965-10-01 1966-09-28 Verfahren zur herstellung von isolierschichten fuer elektrischevorrichtungen

Country Status (6)

Country Link
US (1) USB492339I5 (enrdf_load_stackoverflow)
CH (1) CH464303A (enrdf_load_stackoverflow)
DE (1) DE1590750B1 (enrdf_load_stackoverflow)
GB (1) GB1146754A (enrdf_load_stackoverflow)
NL (1) NL6613837A (enrdf_load_stackoverflow)
SE (1) SE332665B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8624637D0 (en) * 1986-10-14 1986-11-19 Emi Plc Thorn Electrical device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB315354A (en) * 1928-07-12 1930-09-18 Telefunken Gmbh Improvements in or relating to electric insulating material
GB393562A (en) * 1930-09-01 1933-06-08 Gen Electric Improvements in and relating to methods of fusing high dielectrics
DE596124C (de) * 1930-01-16 1934-04-27 Telefunken Gmbh Elektrischer Apparat, bei welchem die sich erhitzenden Teile in ein hauptsaechlich aus Quarz bestehendes Isoliermaterial eingebettet sind
DE1159529B (de) * 1961-01-25 1963-12-19 Siemens Ag Isolierschicht zwischen elektrischen Leitern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB315354A (en) * 1928-07-12 1930-09-18 Telefunken Gmbh Improvements in or relating to electric insulating material
DE596124C (de) * 1930-01-16 1934-04-27 Telefunken Gmbh Elektrischer Apparat, bei welchem die sich erhitzenden Teile in ein hauptsaechlich aus Quarz bestehendes Isoliermaterial eingebettet sind
GB393562A (en) * 1930-09-01 1933-06-08 Gen Electric Improvements in and relating to methods of fusing high dielectrics
DE1159529B (de) * 1961-01-25 1963-12-19 Siemens Ag Isolierschicht zwischen elektrischen Leitern

Also Published As

Publication number Publication date
NL6613837A (enrdf_load_stackoverflow) 1967-04-03
CH464303A (de) 1968-10-31
GB1146754A (en) 1969-03-26
SE332665B (enrdf_load_stackoverflow) 1971-02-15
USB492339I5 (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
DE1640457C2 (enrdf_load_stackoverflow)
DE2048915C3 (de) Verfahren zum Herstellen eines metallischen Musters für eine Halbleiteranordnung
DE2601656A1 (de) Hochohmige metallkeramikschicht und verfahren zu deren herstellung
DE1640457B1 (de) Elektrische Verbindungen in Schaltkreisanordnungen und Verfahren zu ihrer Herstellung
DE1950126A1 (de) Verfahren zur Aufringung isolierender Filme und elektronische Bauelemente
DE1640486C3 (de) Verfahren zum reaktiven Zerstäuben von elementarem Silicium
DE3014151C2 (de) Generator für gepulste Elektronenstrahlen
Campbell Some dielectric properties of electron-beam evaporated yttrium oxide thin films
DE1590682A1 (de) Verfahren zur Herstellung von Duennfilm-Schaltvorrichtungen
DE2220086B2 (de) Vorrichtung zur Aufbringung eines Materials
DE1590750B1 (de) Verfahren zur herstellung von isolierschichten fuer elektrischevorrichtungen
DE1105068B (de) Verfahren zur Herstellung von Vielfachdioden
DE2440169C2 (de) Verfahren zur Herstellung von Josephson-Kontakten
CH634605A5 (en) Process for the preparation of coarsely crystalline and monocrystalline metal layers
DE2550512A1 (de) Verfahren zur herstellung einer metallisierung auf einem substrat
DE3018510C2 (de) Josephson-Übergangselement
DE2534414A1 (de) Magneto-widerstand und verfahren zu dessen herstellung
EP0020395A1 (de) Verfahren zum herstellen von halbleiterbauelementen
DE1289187B (de) Verfahren zum Herstellen einer mikroelektronischen Schaltungsanordnung
DE3106212A1 (de) "waermeableitkoerper fuer eine halbleiterzelle, insbesondere eine solarzelle"
DE1764756A1 (de) Duennschicht-Feldeffekt-Halbleiterbauelement
DE2513509A1 (de) Duennschicht-chipkondensator
DE1665750A1 (de) Magnetfeldabhaengiger Widerstand
DE1163977B (de) Sperrfreier Kontakt an einer Zone des Halbleiterkoerpers eines Halbleiterbauelementes
DE2262022A1 (de) Verfahren zur einstellung des widerstands-temperaturkoeffizienten