DE1544259A1 - Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten - Google Patents
Verfahren zum Herstellen von gleichmaessigen epitaktischen AufwachsschichtenInfo
- Publication number
- DE1544259A1 DE1544259A1 DE19651544259 DE1544259A DE1544259A1 DE 1544259 A1 DE1544259 A1 DE 1544259A1 DE 19651544259 DE19651544259 DE 19651544259 DE 1544259 A DE1544259 A DE 1544259A DE 1544259 A1 DE1544259 A1 DE 1544259A1
- Authority
- DE
- Germany
- Prior art keywords
- hydrogen
- semiconductor material
- component
- reaction gas
- silicochloroform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0095337 | 1965-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1544259A1 true DE1544259A1 (de) | 1970-07-09 |
Family
ID=7519300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651544259 Pending DE1544259A1 (de) | 1965-02-05 | 1965-02-03 | Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3445300A (enExample) |
| AT (1) | AT259019B (enExample) |
| CH (1) | CH476515A (enExample) |
| DE (1) | DE1544259A1 (enExample) |
| GB (1) | GB1135111A (enExample) |
| NL (1) | NL6601149A (enExample) |
| SE (1) | SE309223B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3941647A (en) * | 1973-03-08 | 1976-03-02 | Siemens Aktiengesellschaft | Method of producing epitaxially semiconductor layers |
| DE2843261C2 (de) * | 1978-10-04 | 1983-07-28 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verfahren zum Wärmebehandeln von Halbleiterbauelementen |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
| DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| NL288035A (enExample) * | 1962-01-24 | |||
| US3200018A (en) * | 1962-01-29 | 1965-08-10 | Hughes Aircraft Co | Controlled epitaxial crystal growth by focusing electromagnetic radiation |
| DE1250789B (de) * | 1962-07-09 | 1967-09-28 | Western Electric Company Incorporated, New York, N.Y. (V. St. A.) | Verfahren zum Züchten eines epitaktisch gewachsenen Einkristalles mit Hilfe einer Transportreaktion |
| US3297501A (en) * | 1963-12-31 | 1967-01-10 | Ibm | Process for epitaxial growth of semiconductor single crystals |
| GB1039748A (en) * | 1964-07-25 | 1966-08-24 | Ibm | Improvements relating to methods of growing silicon carbide crystals epitaxially |
| US3354004A (en) * | 1964-11-17 | 1967-11-21 | Ibm | Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems |
-
1965
- 1965-02-03 DE DE19651544259 patent/DE1544259A1/de active Pending
-
1966
- 1966-01-28 NL NL6601149A patent/NL6601149A/xx unknown
- 1966-02-01 US US524200A patent/US3445300A/en not_active Expired - Lifetime
- 1966-02-03 CH CH151566A patent/CH476515A/de not_active IP Right Cessation
- 1966-02-03 GB GB4707/66A patent/GB1135111A/en not_active Expired
- 1966-02-03 SE SE1419/66A patent/SE309223B/xx unknown
- 1966-02-04 AT AT103566A patent/AT259019B/de active
Also Published As
| Publication number | Publication date |
|---|---|
| SE309223B (enExample) | 1969-03-17 |
| US3445300A (en) | 1969-05-20 |
| NL6601149A (enExample) | 1966-08-08 |
| AT259019B (de) | 1967-12-27 |
| CH476515A (de) | 1969-08-15 |
| GB1135111A (en) | 1968-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60011215T2 (de) | Vorrichtung zum Aufbringen von dünnen Schichten | |
| DE69222110T2 (de) | Verfahren zum Herstellen einer Halbeiteranordnung, wobei auf der Oberfläche einer Halbleiterscheibe aus einem Prozessgas eine Materialschicht abgeschieden wird | |
| DE69301903T2 (de) | Dampferzeuger für Systeme zur chemischen Beschichtung aus der Dampfphase | |
| DE69114373T2 (de) | Verfahren zum Herstellen eines Siliziumnitrid-Filmes. | |
| DE69330851T2 (de) | Verfahren zum Auftragen von Silizium-Oxid-Schichten mit verbesserten Eigenschaften | |
| DE69408388T2 (de) | Verfahren zur Trennung eines Silans mit Hilfe einer Membran | |
| DE2848691A1 (de) | Verfahren und gas zur behandlung von halbleiter-bauelementen | |
| DE2110289B2 (de) | Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung | |
| DE60020781T2 (de) | Sprudelvorrichtung mit zwei Fritten | |
| DE1900119A1 (de) | Verfahren zum Abscheiden hochschmelzender Kontaktmetallschichten bei niedrigen Temperaturen | |
| DE2114772A1 (de) | Verfahren zum epitaktischen Aufwachsen von Verbindungshalbleitern aus der Dampfphase | |
| DE4222406C2 (de) | Verfahren zur Herstellung von Diamantschichten durch Dampfphasensynthese | |
| DE2419142A1 (de) | Verfahren zum aufwachsen einer halbleiterschicht aus der dampfphase | |
| DE3526889A1 (de) | Einrichtung zum bilden eines halbleiterkristalls | |
| DE1544259A1 (de) | Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten | |
| DE10394037B4 (de) | Verfahren zur Herstellung einer Metallsulfidschicht | |
| DE1544287B2 (de) | Verfahren zum Herstellen einer Schutzschicht aus Siliciumnitrid | |
| WO2002055754A2 (de) | Verfahren und vorrichtung zum gasphasendiffusionsbeschichten von metallischen bauteilen | |
| DE2829830C2 (de) | Verfahren zur epitaktischen Abscheidung | |
| DE2315894C3 (de) | Verfahren zum Eindiffundieren von Dotierstoff in einen Halbleiterkörper | |
| DE2025779C3 (de) | Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls | |
| DE1719498A1 (de) | Epitaxialwachstum von Galliumarsenid | |
| DE2652449C2 (de) | Verfahren zum Ablagern von Siliziumnitrid auf einer Vielzahl von Substraten | |
| DE2723501C2 (de) | Verfahren und Vorrichtung zum Abscheiden von Siliziumnitridschichten auf Halbleiteranordnungen | |
| DE2723500C2 (de) | Verfahren zum Abscheiden von Siliziumdioxydschichten auf Halbleiteranordnungen |