DE1539863B2 - - Google Patents

Info

Publication number
DE1539863B2
DE1539863B2 DE1539863A DED0050685A DE1539863B2 DE 1539863 B2 DE1539863 B2 DE 1539863B2 DE 1539863 A DE1539863 A DE 1539863A DE D0050685 A DED0050685 A DE D0050685A DE 1539863 B2 DE1539863 B2 DE 1539863B2
Authority
DE
Germany
Prior art keywords
emitter
base
lead
power transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1539863A
Other languages
German (de)
English (en)
Other versions
DE1539863C3 (de
DE1539863A1 (de
Inventor
Richard Hallett Palo Alto Calif. Winkler (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1539863A1 publication Critical patent/DE1539863A1/de
Publication of DE1539863B2 publication Critical patent/DE1539863B2/de
Application granted granted Critical
Publication of DE1539863C3 publication Critical patent/DE1539863C3/de
Expired legal-status Critical Current

Links

Classifications

    • H10W40/10—
    • H10W42/00—
    • H10W44/20—
    • H10W72/851—
    • H10W44/226—
    • H10W72/075—
    • H10W72/5363—
    • H10W72/5449—
    • H10W90/753—
    • H10W90/754—

Landscapes

  • Microwave Amplifiers (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Power Conversion In General (AREA)
DE1539863A 1965-08-19 1966-07-26 Hochfrequenz-Hochleistungstransistor Expired DE1539863C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US480870A US3387190A (en) 1965-08-19 1965-08-19 High frequency power transistor having electrodes forming transmission lines

Publications (3)

Publication Number Publication Date
DE1539863A1 DE1539863A1 (de) 1970-01-22
DE1539863B2 true DE1539863B2 (cg-RX-API-DMAC10.html) 1979-06-13
DE1539863C3 DE1539863C3 (de) 1980-02-21

Family

ID=23909674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1539863A Expired DE1539863C3 (de) 1965-08-19 1966-07-26 Hochfrequenz-Hochleistungstransistor

Country Status (5)

Country Link
US (1) US3387190A (cg-RX-API-DMAC10.html)
DE (1) DE1539863C3 (cg-RX-API-DMAC10.html)
ES (1) ES330410A1 (cg-RX-API-DMAC10.html)
GB (1) GB1125417A (cg-RX-API-DMAC10.html)
NL (1) NL151840B (cg-RX-API-DMAC10.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479570A (en) * 1966-06-14 1969-11-18 Rca Corp Encapsulation and connection structure for high power and high frequency semiconductor devices
JPS4697Y1 (cg-RX-API-DMAC10.html) * 1967-03-09 1971-01-06
DE1914442C3 (de) * 1969-03-21 1978-05-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3671793A (en) * 1969-09-16 1972-06-20 Itt High frequency transistor structure having an impedance transforming network incorporated on the semiconductor chip
US3614546A (en) * 1970-01-07 1971-10-19 Rca Corp Shielded semiconductor device
US3649872A (en) * 1970-07-15 1972-03-14 Trw Inc Packaging structure for high-frequency semiconductor devices
US3710202A (en) * 1970-09-09 1973-01-09 Rca Corp High frequency power transistor support
US3641398A (en) * 1970-09-23 1972-02-08 Rca Corp High-frequency semiconductor device
US3728589A (en) * 1971-04-16 1973-04-17 Rca Corp Semiconductor assembly
US3715635A (en) * 1971-06-25 1973-02-06 Bendix Corp High frequency matched impedance microcircuit holder
US3784883A (en) * 1971-07-19 1974-01-08 Communications Transistor Corp Transistor package
US3855606A (en) * 1971-12-23 1974-12-17 Licentia Gmbh Semiconductor arrangement
US3733525A (en) * 1972-03-20 1973-05-15 Collins Radio Co Rf microwave amplifier and carrier
US3916434A (en) * 1972-11-30 1975-10-28 Power Hybrids Inc Hermetically sealed encapsulation of semiconductor devices
US3898594A (en) * 1973-11-02 1975-08-05 Trw Inc Microwave semiconductor device package
US3996603A (en) * 1974-10-18 1976-12-07 Motorola, Inc. RF power semiconductor package and method of manufacture
US4213141A (en) * 1978-05-12 1980-07-15 Solid State Scientific Inc. Hybrid transistor
US4183041A (en) * 1978-06-26 1980-01-08 Rca Corporation Self biasing of a field effect transistor mounted in a flip-chip carrier
JPS6022345A (ja) * 1983-07-19 1985-02-04 Toyota Central Res & Dev Lab Inc 半導体装置
JPH0767055B2 (ja) * 1989-12-05 1995-07-19 三菱電機株式会社 高周波半導体装置
JP3364404B2 (ja) * 1997-02-12 2003-01-08 株式会社東芝 半導体の入出力接続構造
US8410601B2 (en) * 2009-11-15 2013-04-02 Microsemi Corporation RF package
US8034666B2 (en) * 2009-11-15 2011-10-11 Microsemi Corporation Multi-layer thick-film RF package

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3259814A (en) * 1955-05-20 1966-07-05 Rca Corp Power semiconductor assembly including heat dispersing means
US3021461A (en) * 1958-09-10 1962-02-13 Gen Electric Semiconductor device
US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
DE1113718B (de) * 1959-05-15 1961-09-14 Telefunken Patent Halbleiteranordnung mit kleiner Zuleitungsinduktivitaet
NL275288A (cg-RX-API-DMAC10.html) * 1961-02-28
US3267341A (en) * 1962-02-09 1966-08-16 Hughes Aircraft Co Double container arrangement for transistors
DE1287696B (cg-RX-API-DMAC10.html) * 1962-04-16 1969-01-23

Also Published As

Publication number Publication date
GB1125417A (en) 1968-08-28
DE1539863C3 (de) 1980-02-21
US3387190A (en) 1968-06-04
NL151840B (nl) 1976-12-15
NL6611693A (cg-RX-API-DMAC10.html) 1967-02-20
ES330410A1 (es) 1967-06-16
DE1539863A1 (de) 1970-01-22

Similar Documents

Publication Publication Date Title
DE1539863C3 (de) Hochfrequenz-Hochleistungstransistor
EP0277546B1 (de) Halbleiteranordnung mit mindestens einem Halbleiterkörper
DE2352357A1 (de) Halbleitergehaeuse
EP0427143A2 (de) Leistungshalbleitermodul
DE3913221A1 (de) Halbleiteranordnung
DE102013100701B4 (de) Halbleitermodulanordnung und verfahren zur herstellung einer halbleitermodulanordnung
DE2726040B2 (de) Hochfrequenz-Halbleiteranordnung
DE1937664B2 (de) Halbleiterbauelement
DE112021002909T5 (de) Halbleiterbauteil
DE1914442C3 (de) Halbleiteranordnung
DE2300116B2 (de) Hochfrequenz-Feldeffekttransistor mit isolierter Gate-Elektrode für Breitbandbetrieb
DE69418037T2 (de) Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau
DE3930858C2 (de) Modulaufbau
DE1812942C3 (de) Halbleiteranordnung und Schaltungsanordnung mit einer solchen Halbleiteranordnung
DE2536957C2 (de) Elektronisches Bauelement
DE69718280T2 (de) Hochfrequenzverstärker
DE3323463A1 (de) Tastenschalter
DE1614858C3 (de) Halbleiteranordnung
DE2111098A1 (de) Transistor-Konstruktion
DE1297233B (de) Feldeffekttransistor
DE112017007548T5 (de) Verstärker
DE1800213A1 (de) Gehaeuse fuer integrierte Halbleiterschaltungen
DE2855265A1 (de) Thyristor
DE3033516A1 (de) Halbleiteranordnung in einem kunstharzgehaeuse
DE1614236B2 (de) Halbleiteranordnung

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee