DE1419717A1 - Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben - Google Patents

Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben

Info

Publication number
DE1419717A1
DE1419717A1 DE1961M0050975 DEM0050975A DE1419717A1 DE 1419717 A1 DE1419717 A1 DE 1419717A1 DE 1961M0050975 DE1961M0050975 DE 1961M0050975 DE M0050975 A DEM0050975 A DE M0050975A DE 1419717 A1 DE1419717 A1 DE 1419717A1
Authority
DE
Germany
Prior art keywords
conductivity
semiconductor
atoms
deposited
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1961M0050975
Other languages
German (de)
English (en)
Other versions
DE1419717B2 (https=
Inventor
Pollak Peter Immanuel
Mcaleer William Joseph
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of DE1419717A1 publication Critical patent/DE1419717A1/de
Publication of DE1419717B2 publication Critical patent/DE1419717B2/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE1961M0050975 1960-12-06 1961-11-23 Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben Pending DE1419717A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7411160A 1960-12-06 1960-12-06
US360170A US3366516A (en) 1960-12-06 1964-04-13 Method of making a semiconductor crystal body

Publications (2)

Publication Number Publication Date
DE1419717A1 true DE1419717A1 (de) 1968-10-17
DE1419717B2 DE1419717B2 (https=) 1970-08-06

Family

ID=26755265

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1961M0050975 Pending DE1419717A1 (de) 1960-12-06 1961-11-23 Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben
DE1961M0058327 Pending DE1498891A1 (de) 1960-12-06 1961-11-23 Verfahren zur Bestimmung der Konzentration von aktiven Verunreinigungen in einer zur Darstellung eines halbleitenden Elements geeigneten Verbindung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1961M0058327 Pending DE1498891A1 (de) 1960-12-06 1961-11-23 Verfahren zur Bestimmung der Konzentration von aktiven Verunreinigungen in einer zur Darstellung eines halbleitenden Elements geeigneten Verbindung

Country Status (3)

Country Link
US (1) US3366516A (https=)
DE (2) DE1419717A1 (https=)
GB (1) GB1007555A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (de) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1261842B (de) * 1964-12-12 1968-02-29 Siemens Ag Verfahren zum Herstellen von hochreinem Silicium
US3930908A (en) * 1974-09-30 1976-01-06 Rca Corporation Accurate control during vapor phase epitaxy
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
US4732110A (en) * 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (https=) * 1951-03-07 1900-01-01
NL113118C (https=) * 1954-05-18 1900-01-01
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
US2917442A (en) * 1955-12-30 1959-12-15 Electronique & Automatisme Sa Method of making electroluminescent layers
US2898248A (en) * 1957-05-15 1959-08-04 Ibm Method of fabricating germanium bodies
US3065112A (en) * 1958-06-24 1962-11-20 Union Carbide Corp Process for the production of large semiconductor crystals
NL133151C (https=) * 1959-05-28 1900-01-01
US3012902A (en) * 1959-12-08 1961-12-12 Owens Illinois Glass Co Process of reacting a vaporous metal with a glass surface
NL263037A (https=) * 1960-03-31
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (de) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten

Also Published As

Publication number Publication date
DE1498891A1 (de) 1969-02-06
GB1007555A (en) 1965-10-13
US3366516A (en) 1968-01-30
DE1419717B2 (https=) 1970-08-06

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971