DE1419207A1 - Verfahren und Vorrichtung zur Herstellung von einkristallinen Koerpern aus einem Stoff,z.B. einem Halbleiter,wie Germanium oder Silizium - Google Patents
Verfahren und Vorrichtung zur Herstellung von einkristallinen Koerpern aus einem Stoff,z.B. einem Halbleiter,wie Germanium oder SiliziumInfo
- Publication number
- DE1419207A1 DE1419207A1 DE19571419207 DE1419207A DE1419207A1 DE 1419207 A1 DE1419207 A1 DE 1419207A1 DE 19571419207 DE19571419207 DE 19571419207 DE 1419207 A DE1419207 A DE 1419207A DE 1419207 A1 DE1419207 A1 DE 1419207A1
- Authority
- DE
- Germany
- Prior art keywords
- rod
- crucible
- radiation
- temperature
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 44
- 239000013078 crystal Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 229910052732 germanium Inorganic materials 0.000 title description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title description 2
- 239000000463 material Substances 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 title description 2
- 239000010703 silicon Substances 0.000 title description 2
- 230000005855 radiation Effects 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 241000130764 Tinea Species 0.000 claims description 2
- 208000002474 Tinea Diseases 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 241000282836 Camelus dromedarius Species 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000003921 oil Substances 0.000 description 5
- 244000269722 Thea sinensis Species 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 240000004093 Mitragyna parvifolia Species 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- BHMLFPOTZYRDKA-IRXDYDNUSA-N (2s)-2-[(s)-(2-iodophenoxy)-phenylmethyl]morpholine Chemical compound IC1=CC=CC=C1O[C@@H](C=1C=CC=CC=1)[C@H]1OCCNC1 BHMLFPOTZYRDKA-IRXDYDNUSA-N 0.000 description 1
- 241000272517 Anseriformes Species 0.000 description 1
- 244000000626 Daucus carota Species 0.000 description 1
- 235000002767 Daucus carota Nutrition 0.000 description 1
- 208000027534 Emotional disease Diseases 0.000 description 1
- 101150083807 HSD17B10 gene Proteins 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229940108461 rennet Drugs 0.000 description 1
- 108010058314 rennet Proteins 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL212549 | 1956-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1419207A1 true DE1419207A1 (de) | 1969-03-27 |
Family
ID=19750817
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19571419207 Pending DE1419207A1 (de) | 1956-11-28 | 1957-11-23 | Verfahren und Vorrichtung zur Herstellung von einkristallinen Koerpern aus einem Stoff,z.B. einem Halbleiter,wie Germanium oder Silizium |
| DEN23970A Pending DE1272900B (de) | 1956-11-28 | 1957-11-23 | Vorrichtung zum Ziehen einkristalliner Staebe aus einer Schmelze |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN23970A Pending DE1272900B (de) | 1956-11-28 | 1957-11-23 | Vorrichtung zum Ziehen einkristalliner Staebe aus einer Schmelze |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3002824A (enrdf_load_stackoverflow) |
| BE (1) | BE562704A (enrdf_load_stackoverflow) |
| CH (1) | CH397601A (enrdf_load_stackoverflow) |
| DE (2) | DE1419207A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1196959A (enrdf_load_stackoverflow) |
| GB (1) | GB827465A (enrdf_load_stackoverflow) |
| NL (1) | NL104388C (enrdf_load_stackoverflow) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264214A (enrdf_load_stackoverflow) * | 1960-05-02 | 1900-01-01 | ||
| US3241925A (en) * | 1960-08-19 | 1966-03-22 | Union Carbide Corp | Apparatus for growing solid homogeneous compositions |
| NL270246A (enrdf_load_stackoverflow) * | 1961-10-13 | |||
| DE1289519B (de) * | 1962-11-19 | 1969-02-20 | Siemens Ag | Vorrichtung zum Ziehen eines Halbleiterkristalls aus einer Schmelze |
| DE1286510B (de) * | 1962-11-23 | 1969-01-09 | Siemens Ag | Verfahren zur Herstellung von bandfoermigen, aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze |
| US3249404A (en) * | 1963-02-20 | 1966-05-03 | Merck & Co Inc | Continuous growth of crystalline materials |
| DE1217926B (de) * | 1963-08-17 | 1966-06-02 | Siemens Ag | Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen |
| US3340016A (en) * | 1963-09-26 | 1967-09-05 | Consortium Elektrochem Ind | Producing and regulating translatory movement in the manufacture of semiconductor bodies |
| DE1251721B (de) * | 1963-10-28 | 1967-10-12 | Siemens Aktiengesellschaft, Berlin und München München | Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration |
| US3291650A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Control of crystal size |
| US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
| US3527574A (en) * | 1966-09-27 | 1970-09-08 | Tyco Laboratories Inc | Growth of sapphire filaments |
| US3607109A (en) * | 1968-01-09 | 1971-09-21 | Emil R Capita | Method and means of producing a large diameter single-crystal rod from a polycrystal bar |
| US3690367A (en) * | 1968-07-05 | 1972-09-12 | Anadite Inc | Apparatus for the restructuring of metals |
| US3607115A (en) * | 1969-10-29 | 1971-09-21 | Gen Motors Corp | Crystal pulling from molten melts including solute introduction means below the seed-melt interface |
| DE2319700C3 (de) * | 1973-04-18 | 1980-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Beeinflussung des radialen Widerstandsverlaufs in einem Halbleitereinkristallstab beim tiegellosen Zonenschmelzen und Vorrichtungen zur Durchführung des Verfahrens |
| US4039283A (en) * | 1973-04-18 | 1977-08-02 | Siemens Aktiengesellschaft | Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod |
| US4032390A (en) * | 1974-02-25 | 1977-06-28 | Corning Glass Works | Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls |
| US4264385A (en) * | 1974-10-16 | 1981-04-28 | Colin Fisher | Growing of crystals |
| US4167554A (en) * | 1974-10-16 | 1979-09-11 | Metals Research Limited | Crystallization apparatus having floating die member with tapered aperture |
| GB1487587A (en) * | 1974-12-04 | 1977-10-05 | Metals Res Ltd | Crystal growth |
| US4000030A (en) * | 1975-06-09 | 1976-12-28 | International Business Machines Corporation | Method for drawing a monocrystal from a melt formed about a wettable projection |
| US4090851A (en) * | 1976-10-15 | 1978-05-23 | Rca Corporation | Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets |
| US4116642A (en) * | 1976-12-15 | 1978-09-26 | Western Electric Company, Inc. | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
| JPS6024078B2 (ja) * | 1977-09-05 | 1985-06-11 | 株式会社東芝 | ３−５族化合物半導体単結晶の製造装置 |
| US4271129A (en) * | 1979-03-06 | 1981-06-02 | Rca Corporation | Heat radiation deflectors within an EFG crucible |
| US4299648A (en) * | 1980-08-20 | 1981-11-10 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for drawing monocrystalline ribbon from a melt |
| JPS57179099A (en) * | 1981-04-28 | 1982-11-04 | Toshiba Corp | Manufacturing apparatus for silicon single crystal |
| JP2529934B2 (ja) * | 1984-02-21 | 1996-09-04 | 住友電気工業株式会社 | 単結晶の製造方法 |
| US4944925A (en) * | 1985-06-10 | 1990-07-31 | Sumitomo Electric Industries, Ltd. | Apparatus for producing single crystals |
| JPS623096A (ja) * | 1985-06-27 | 1987-01-09 | Res Dev Corp Of Japan | 高解離圧化合物半導体単結晶成長方法 |
| JPS6259594A (ja) * | 1985-09-11 | 1987-03-16 | Sumitomo Electric Ind Ltd | 結晶の引上げ方法 |
| JPS6287489A (ja) * | 1985-10-12 | 1987-04-21 | Sumitomo Electric Ind Ltd | るつぼの回収方法及び装置 |
| USH520H (en) | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
| JPS6379790A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
| US4990179A (en) * | 1990-04-23 | 1991-02-05 | Fmc Corporation | Process for increasing the life of carbon crucibles in plasma furnaces |
| US5370078A (en) * | 1992-12-01 | 1994-12-06 | Wisconsin Alumni Research Foundation | Method and apparatus for crystal growth with shape and segregation control |
| IL128827A0 (en) * | 1999-03-04 | 2000-01-31 | Solmecs Israel Ltd | Apparatus for growing single crystals |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2855355A (en) * | 1945-11-28 | 1958-10-07 | Leo A Ohlinger | Jacketed uranium slug |
| BE510303A (enrdf_load_stackoverflow) * | 1951-11-16 | |||
| US2753280A (en) * | 1952-05-01 | 1956-07-03 | Rca Corp | Method and apparatus for growing crystalline material |
| BE525102A (enrdf_load_stackoverflow) * | 1952-12-17 | 1900-01-01 | ||
| DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
| BE528916A (enrdf_load_stackoverflow) * | 1953-05-18 | |||
| US2686212A (en) * | 1953-08-03 | 1954-08-10 | Gen Electric | Electric heating apparatus |
| DE1044768B (de) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
| US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
| US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
-
0
- BE BE562704D patent/BE562704A/xx unknown
- NL NL104388D patent/NL104388C/xx active
-
1957
- 1957-11-18 US US697046A patent/US3002824A/en not_active Expired - Lifetime
- 1957-11-23 DE DE19571419207 patent/DE1419207A1/de active Pending
- 1957-11-23 DE DEN23970A patent/DE1272900B/de active Pending
- 1957-11-25 CH CH5303557A patent/CH397601A/de unknown
- 1957-11-25 GB GB36646/57A patent/GB827465A/en not_active Expired
- 1957-11-26 FR FR1196959D patent/FR1196959A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE562704A (enrdf_load_stackoverflow) | |
| NL104388C (enrdf_load_stackoverflow) | |
| FR1196959A (fr) | 1959-11-27 |
| DE1272900B (de) | 1968-07-18 |
| US3002824A (en) | 1961-10-03 |
| CH397601A (de) | 1965-08-31 |
| GB827465A (en) | 1960-02-03 |
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