DE1290409B - Verfahren zur Erzeugung duenner Schichten aus Kadmiumsalzen durch Aufdampfen - Google Patents

Verfahren zur Erzeugung duenner Schichten aus Kadmiumsalzen durch Aufdampfen

Info

Publication number
DE1290409B
DE1290409B DEH55591A DEH0055591A DE1290409B DE 1290409 B DE1290409 B DE 1290409B DE H55591 A DEH55591 A DE H55591A DE H0055591 A DEH0055591 A DE H0055591A DE 1290409 B DE1290409 B DE 1290409B
Authority
DE
Germany
Prior art keywords
cadmium
chamber
salt
sulfur
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEH55591A
Other languages
German (de)
English (en)
Inventor
Pizzarello Frank A
Dill Hans G
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE1290409B publication Critical patent/DE1290409B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
    • C01P2004/86—Thin layer coatings, i.e. the coating thickness being less than 0.1 time the particle radius
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
DEH55591A 1964-04-15 1965-03-26 Verfahren zur Erzeugung duenner Schichten aus Kadmiumsalzen durch Aufdampfen Pending DE1290409B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US359976A US3361591A (en) 1964-04-15 1964-04-15 Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide

Publications (1)

Publication Number Publication Date
DE1290409B true DE1290409B (de) 1969-03-06

Family

ID=23416074

Family Applications (1)

Application Number Title Priority Date Filing Date
DEH55591A Pending DE1290409B (de) 1964-04-15 1965-03-26 Verfahren zur Erzeugung duenner Schichten aus Kadmiumsalzen durch Aufdampfen

Country Status (4)

Country Link
US (1) US3361591A (enExample)
DE (1) DE1290409B (enExample)
GB (1) GB1077116A (enExample)
SE (1) SE302165B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1862564A1 (de) * 2006-06-03 2007-12-05 Applied Materials GmbH & Co. KG Vorrichtung zum Verdampfen von Materialien mit einem Verdampferrohr

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6700080A (enExample) * 1966-01-03 1967-07-04
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
FR95985E (fr) * 1966-05-16 1972-05-19 Rank Xerox Ltd Semi-conducteurs vitreux et leur procédé de fabrication sous forme de pellicules minces.
US3466191A (en) * 1966-11-07 1969-09-09 Us Army Method of vacuum deposition of piezoelectric films of cadmium sulfide
US3519480A (en) * 1967-01-13 1970-07-07 Eastman Kodak Co Process for treating photoconductive cadmium sulfide layers
DE1916818A1 (de) * 1968-06-28 1970-03-12 Euratom Verfahren und Vorrichtung zur Vakuumaufdampfung monokristalliner Schichten
BE728876A (enExample) * 1969-02-24 1969-08-01
US3675619A (en) * 1969-02-25 1972-07-11 Monsanto Co Apparatus for production of epitaxial films
US3678889A (en) * 1970-02-06 1972-07-25 Tokyo Shibaura Electric Co Reflector assembly for reflecting the vapors of high temperature volatile materials
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds
US4620968A (en) * 1981-12-30 1986-11-04 Stauffer Chemical Company Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US4508931A (en) * 1981-12-30 1985-04-02 Stauffer Chemical Company Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
AT392486B (de) * 1988-08-29 1991-04-10 Hainzl Industriesysteme Ges M Verfahren und vorrichtung zum aufdampfen einer beschichtung auf einem traeger im vakuum
GB2230792A (en) * 1989-04-21 1990-10-31 Secr Defence Multiple source physical vapour deposition.
JP3697505B2 (ja) * 2000-03-17 2005-09-21 国立大学法人東京工業大学 薄膜形成方法
CN100529155C (zh) * 2003-07-03 2009-08-19 伊菲雷知识产权公司 用于无机发光材料沉积的硫化氢注射方法
RU2342469C2 (ru) * 2006-12-07 2008-12-27 Федеральное государственное образовательное учреждение высшего профессионального образования Санкт-Петербургский государственный университет (СПбГУ) Способ нанесения тонких стехиометрических пленок бинарных соединений

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2932592A (en) * 1953-06-22 1960-04-12 Angus E Cameron Method for producing thin films and articles containing same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL93669C (enExample) * 1939-01-22
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
DE1254428B (de) * 1960-08-23 1967-11-16 Standard Elektrik Lorenz Ag Verfahren zum Herstellen lichtempfindlicher Bleiselenidschichten durch Aufdampfen imVakuum

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2932592A (en) * 1953-06-22 1960-04-12 Angus E Cameron Method for producing thin films and articles containing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1862564A1 (de) * 2006-06-03 2007-12-05 Applied Materials GmbH & Co. KG Vorrichtung zum Verdampfen von Materialien mit einem Verdampferrohr

Also Published As

Publication number Publication date
SE302165B (enExample) 1968-07-08
GB1077116A (en) 1967-07-26
US3361591A (en) 1968-01-02

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