DE1246127B - Verfahren zum Aufbringen von metallischen Elektroden auf Bereichen der Oberflaeche eines pn-UEbergaenge enthaltenden Halbleiterkoerpers - Google Patents

Verfahren zum Aufbringen von metallischen Elektroden auf Bereichen der Oberflaeche eines pn-UEbergaenge enthaltenden Halbleiterkoerpers

Info

Publication number
DE1246127B
DE1246127B DER35674A DER0035674A DE1246127B DE 1246127 B DE1246127 B DE 1246127B DE R35674 A DER35674 A DE R35674A DE R0035674 A DER0035674 A DE R0035674A DE 1246127 B DE1246127 B DE 1246127B
Authority
DE
Germany
Prior art keywords
layer
areas
etch
exposed
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DER35674A
Other languages
German (de)
English (en)
Inventor
Cameron Larkin Davis
Charles George Hettich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1246127B publication Critical patent/DE1246127B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
DER35674A 1962-07-31 1963-07-15 Verfahren zum Aufbringen von metallischen Elektroden auf Bereichen der Oberflaeche eines pn-UEbergaenge enthaltenden Halbleiterkoerpers Pending DE1246127B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21369562A 1962-07-31 1962-07-31

Publications (1)

Publication Number Publication Date
DE1246127B true DE1246127B (de) 1967-08-03

Family

ID=22796141

Family Applications (1)

Application Number Title Priority Date Filing Date
DER35674A Pending DE1246127B (de) 1962-07-31 1963-07-15 Verfahren zum Aufbringen von metallischen Elektroden auf Bereichen der Oberflaeche eines pn-UEbergaenge enthaltenden Halbleiterkoerpers

Country Status (4)

Country Link
BE (1) BE635672A (OSRAM)
DE (1) DE1246127B (OSRAM)
GB (1) GB988115A (OSRAM)
NL (1) NL295980A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929739A1 (de) * 1979-07-23 1981-02-19 Bbc Brown Boveri & Cie Verfahren zum entfernen von metallschichtresten auf halbleiterscheiben

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386864A (en) * 1963-12-09 1968-06-04 Ibm Semiconductor-metal-semiconductor structure
US4344817A (en) * 1980-09-15 1982-08-17 Photon Power, Inc. Process for forming tin oxide conductive pattern
US4377633A (en) * 1981-08-24 1983-03-22 International Business Machines Corporation Methods of simultaneous contact and metal lithography patterning

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1185444A (fr) * 1956-02-28 1959-07-31 Philips Nv Procédé de fabrication de systèmes d'électrodes semi-conducteurs
FR1212132A (fr) * 1957-08-12 1960-03-22 Int Standard Electric Corp Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
FR77789E (fr) * 1957-08-12 1962-04-20 Int Standard Electric Corp Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1185444A (fr) * 1956-02-28 1959-07-31 Philips Nv Procédé de fabrication de systèmes d'électrodes semi-conducteurs
FR1212132A (fr) * 1957-08-12 1960-03-22 Int Standard Electric Corp Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
FR77789E (fr) * 1957-08-12 1962-04-20 Int Standard Electric Corp Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929739A1 (de) * 1979-07-23 1981-02-19 Bbc Brown Boveri & Cie Verfahren zum entfernen von metallschichtresten auf halbleiterscheiben

Also Published As

Publication number Publication date
NL295980A (OSRAM)
BE635672A (OSRAM)
GB988115A (en) 1965-04-07

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