DE1215304B - Antimikrobielle Mittel - Google Patents

Antimikrobielle Mittel

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Publication number
DE1215304B
DE1215304B DEF44402A DEF0044402A DE1215304B DE 1215304 B DE1215304 B DE 1215304B DE F44402 A DEF44402 A DE F44402A DE F0044402 A DEF0044402 A DE F0044402A DE 1215304 B DE1215304 B DE 1215304B
Authority
DE
Germany
Prior art keywords
parts
antimicrobial
preparations
antimicrobial agents
benzisothiazolone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DEF44402A
Other languages
English (en)
Other versions
DE1215304C2 (de
Inventor
Herbert Klesper
Dr Fritz Steinfatt
Dr Walter Lorenz
Dr Klaus Langheinrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer AG filed Critical Bayer AG
Priority to DE1964F0044402 priority Critical patent/DE1215304C2/de
Priority to CH330867A priority patent/CH435847A/de
Priority to CH1437265A priority patent/CH444568A/de
Priority to FR36439A priority patent/FR1467066A/fr
Priority to BE671490D priority patent/BE671490A/xx
Priority to US505961A priority patent/US3522265A/en
Priority to SE14383/65A priority patent/SE321229B/xx
Priority to GB47460/65A priority patent/GB1081318A/en
Priority to AT1012665A priority patent/AT258476B/de
Priority to NL6514605A priority patent/NL6514605A/xx
Publication of DE1215304B publication Critical patent/DE1215304B/de
Application granted granted Critical
Publication of DE1215304C2 publication Critical patent/DE1215304C2/de
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D275/00—Heterocyclic compounds containing 1,2-thiazole or hydrogenated 1,2-thiazole rings
    • C07D275/04—Heterocyclic compounds containing 1,2-thiazole or hydrogenated 1,2-thiazole rings condensed with carbocyclic rings or ring systems
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01N—PRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF; BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES; PEST REPELLANTS OR ATTRACTANTS; PLANT GROWTH REGULATORS
    • A01N43/00—Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds
    • A01N43/72—Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with nitrogen atoms and oxygen or sulfur atoms as ring hetero atoms
    • A01N43/80—Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with nitrogen atoms and oxygen or sulfur atoms as ring hetero atoms five-membered rings with one nitrogen atom and either one oxygen atom or one sulfur atom in positions 1,2
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06L—DRY-CLEANING, WASHING OR BLEACHING FIBRES, FILAMENTS, THREADS, YARNS, FABRICS, FEATHERS OR MADE-UP FIBROUS GOODS; BLEACHING LEATHER OR FURS
    • D06L1/00—Dry-cleaning or washing fibres, filaments, threads, yarns, fabrics, feathers or made-up fibrous goods
    • D06L1/02—Dry-cleaning or washing fibres, filaments, threads, yarns, fabrics, feathers or made-up fibrous goods using organic solvents
    • D06L1/04—Dry-cleaning or washing fibres, filaments, threads, yarns, fabrics, feathers or made-up fibrous goods using organic solvents combined with specific additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/02—Water
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C10M2219/102—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring containing sulfur and carbon only in the ring
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C10M2219/104—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring containing sulfur and carbon with nitrogen or oxygen in the ring
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C10M2219/104—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring containing sulfur and carbon with nitrogen or oxygen in the ring
    • C10M2219/106—Thiadiazoles
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
    • C10N2040/00—Specified use or application for which the lubricating composition is intended
    • C10N2040/20—Metal working
    • C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

BUNDESREPUBLIK DEUTSCHLAND
DEUTSCHES
PATENTAMT
AUSLEGESCHRIFT
Int. Cl.:
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:
A611
Deutsche Kl.: 3Oi-3
1 215 304
F 44402IV a/30 i
10. November 1964
28. April 1966
Es wurde gefunden, daß Zubereitungen, die man erhält, wenn man 1,2-Benzisothiazolone der allgemeinen Formel
N-R3
Antimikrobielle Mittel
in der Ri und R2 unabhängig voneinander für Wasserstoff oder Halogen stehen und R3 Wasserstoff oder Hydroxyalkyl, beispielsweise Hydroxymethyl und Hydroxyäthyl, bedeutet, mit Paraformaldehyd auf 90 bis 15O0C in organischen Lösungsmitteln erhitzt, hervorragend als antimikrobielle Mittel verwendet werden können. Zu bevorzugen sind solche Zubereitungen, die aus den 1,2-Benzisothiazolonen der angegebenen Formel und Paraformaldehyd im Verhältnis von 1 Mol 1,2-Benzisothiazolon-Verbindung zu 0,5 bis 3 Mol Formaldehyd und in Gegenwart von Alkali unter Benutzung von mit Wasser mischbaren organischen Lösungsmitteln hergestellt sind.
Als einschlägige organische Lösungsmittel seien beispielsweise genannt: Äthylenglykol, Diäthylenglykol, Propylenglykol sowie die Monoäther aus diesen Glykolen und niederen, einwertigen Alkoholen, wie Äthylalkohol und Propylalkohol.
Die Zubereitungen der vorliegenden Erfindung eignen sich insbesondere als antimikrobielle Wirkstoffe bei der desinfizierenden Chemischreinigung sowie zur bakteriostatischen Ausrüstung von Textilien. Die erforderlichen Mengen lassen sich durch Vorversuche leicht ermitteln; bei der Chemischreinigung genügt im allgemeinen ein Zusatz von 4 g der Zubereitungen je Liter Reinigungsflotte, während bei der bakteriostatischen Ausrüstung von Textilien im allgemeinen ein Zusatz von 4%, bezogen auf das Gewicht der Textilien, ausreicht. Bemerkenswerterweise eignen sich die Zubereitungen der vorliegenden Erfindung auch hervorragend zur Konservierung von Bohrölemulsionen und anderen mikrobenanfälligen Emulsionen.
Die in den folgenden Beispielen angegebenen Teile sind Gewichtsteile.
Beispiel 1
Gewebe aus Wolle, Baumwolle, Polyacrylnitrilfasern oder synthetischen Polyamidfasern, die mit Anmelder:
Farbenfabriken Bayer Aktiengesellschaft,
Leverkusen
Als Erfinder benannt:
Herbert Klesper, Köln-Flittard;
Dr. Fritz Steinfatt, Opladen;
Dr. Walter Lorenz, Wuppertal-Vohwinkel;
Dr. Klaus Langheinrich, Leverkusen
Stc. aureus, Bet. coli, Bet. proteus, Bet. pyoeyaneum und Strc. glycerinaceus infiziert sind, werden 20 Minuten einer üblichen Chemischreinigung unterworfen, und zwar im Flottenverhältnis 1 : 13 in Perchloräthylen oder Schwerbenzin, welches im Liter 5 g eines handelsüblichen, auf der Grundlage von anionaktiven und nichtionogenen Tensiden aufgebauten Reinigungsverstärkers sowie 4 g der nachstehend beschriebenen antimikrobiellen Zubereitung enthält. Die relative Luftfeuchtigkeit im Dampfraum der Reinigungsanlage beträgt dabei 75%. Anschließend werden die Gewebe abgeschleudert und getrocknet. Die Gewebe erweisen sich'dann als keimfrei; außerdem sind sie bakteriostatisch und fungistatisch ausgerüstet.
Die verwendete antimikrobielle Zubereitung war in folgender Weise hergestellt:
200 Teile 1,2-Benzisothiazolon wurdenin610 Teilen Äthylenglykolmonopropyläther unter Zugabe von 80 Teilen 45%iger Natronlauge in der Wärme gelöst, dann wurden 60 Teile Paraformaldehyd hinzugegeben, und die Mischung wurde 20 Minuten auf 1150C erhitzt. Abschließend wurden der Lösung noch 50 Teile Cyclohexanon hinzugefügt.
Beispiel 2
Man verfährt wie im Beispiel 1 angegeben, jedoch mit dem Unterschied, daß man an Stelle der dort angegebenen antimikrobiellen Zubereitung eine der beiden Zubereitungen verwendet, die in folgender Weise hergestellt waren:
609 560/444
a) 200 Teile N-Hydroxymethyl-l^-benzisothiazolon wurden in 692 Teilen Äthylenglykolmonopropyläther unter Zugabe von 64 g 45%iger Natronlauge unter Erwärmen gelöst. Dann wurden 44 Teile Paraformaldehyd hinzugefügt, und die Mischung wurde 20 Minuten auf 115° C erhitzt.
b) 200 Teile S-Chlor-l^-benzisothiazolon wurden in 685 Teilen Äthylenglykolmonoäthyläther unter Zugabe von 65 Teilen 45%iger Natronlauge in der Wärme gelöst, dann wurden 50 Teile Paraformaldehyd hinzugefügt, und die Mischung wurde 15 Minuten auf 110°C erhitzt.
Die so behandelten Gewebe erweisen sich dann ebenfalls als keimfrei sowie als bakteriostatisch und fungistatisch ausgerüstet.
Wurden Textilgewebe aus Wolle, die mit den im Beispiel 1 erwähnten Mikroben infiziert waren, gemäß den Angaben des Beispiels 1 behandelt, wobei jedoch an Stelle von 4 g der dort oder im Beispiel 2 angegebenen antimikrobiellen Zubereitungen, denen jeweils 20% an 1,2-Benzisothiazölonen der eingangs angeführten Formel zugrunde gelegen haben, 15 g einer 20%igen Lösung von 1,2-Benzisothiazolo^N-Hydroxymethyl-l^-benzisothiazolon, 5-Chlor-l,2-benzisothiazolon oder dem Natriumsalz des 1,2-Benzisothiazolons in Äthylenglykolmonoäthyläther eingesetzt wurden, so konnte trotz der verhältnismäßig hohen Einsatzmenge an diesen 1,2-Benzisothiazolon-Verbindungen eine Desinfektion der Textilien nicht erreicht werden.
Beispiel3
Gewebe aus Wolle oder aus synthetischen Polyamidfasern werden in einem wäßrigen Bad bei 50°C im Flottenverhältnis 1 : 15 unter Zugabe von 4% der im Beispiel 1 beschriebenen antimikrobiellen Zubereitung und 1% Ameisensäure (jeweils berechnet auf das Gewicht der Gewebe) während 30 Minuten behandelt und anschließend getrocknet. Die Gewebe sind dann hervorragend bakteriostatisch und fungistatisch ausgerüstet. Dieser Ausrüstungseffekt bleibt auch nach mehreren Wäschen erhalten.
Beispiel 4
2 Teile eines handelsüblichen Bohröls, das aus Weißöl und einem anionaktiven Emulgator besteht, werden mit 98 Teilen Wasser zu einer Emulsion verrührt und anschließend unter Rühren noch mit 0,2 Teilen einer der in den Beispielen 1 und 2 beschriebenen antimikrobiellen Zubereitungen versetzt. Die Emulsion ist dann hervorragend konserviert. Im Gegensatz hierzu zeigt die Emulsion, die ohne Zusatz einer der antimikrobiellen Zubereitungen hergestellt ist, bei der üblichen Verwendung bereits nach wenigen Tagen einen starken Bakterienbefall.

Claims (1)

  1. Patentanspruch:
    Verwendung von Zubereitungen, die man erhält, wenn man 1,2-Benzisothiazolone der allgemeinen Formel
    N-R3
    in der Ri und R2 unabhängig voneinander für Wasserstoff oder Halogen stehen und R3 Wasserstoff oder Hydroxyalkyl bedeutet, mit Paraformaldehyd auf 90 bis 150°C in organischen Lösungsmitteln erhitzt, als antimikrobielle Mittel.
    In Betracht gezogene Druckschriften:
    Britische Patentschrift Nr. 918 869;
    USA.-Patentschriften Nr. 2 767 172, 2 767 174, 3 065 123.
DE1964F0044402 1964-11-10 1964-11-10 Antimikrobielle Mittel Expired DE1215304C2 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE1964F0044402 DE1215304C2 (de) 1964-11-10 1964-11-10 Antimikrobielle Mittel
CH1437265A CH444568A (de) 1964-11-10 1965-10-19 Verwendung von Zubereitungen aus 1,2-Benzisothiazolonen als antimikrobielle Mittel für Textilien
CH330867A CH435847A (de) 1964-11-10 1965-10-19 Verwendung von Zubereitungen aus 1,2-Benzisothiazolonen als antimikrobielle Mittel ausserhalb der Textilindustrie
BE671490D BE671490A (de) 1964-11-10 1965-10-27
FR36439A FR1467066A (fr) 1964-11-10 1965-10-27 Agents antimicrobiens à usage industriel
US505961A US3522265A (en) 1964-11-10 1965-11-01 1,2-benzisothiazolone antimicrobial preparations
SE14383/65A SE321229B (de) 1964-11-10 1965-11-08
GB47460/65A GB1081318A (en) 1964-11-10 1965-11-09 Antimicrobial compounds
AT1012665A AT258476B (de) 1964-11-10 1965-11-10 Verfahren zur Herstellung antimikrobieller Mittel
NL6514605A NL6514605A (de) 1964-11-10 1965-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964F0044402 DE1215304C2 (de) 1964-11-10 1964-11-10 Antimikrobielle Mittel

Publications (2)

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DE1215304B true DE1215304B (de) 1966-04-28
DE1215304C2 DE1215304C2 (de) 1966-11-24

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US (1) US3522265A (de)
AT (1) AT258476B (de)
BE (1) BE671490A (de)
CH (2) CH444568A (de)
DE (1) DE1215304C2 (de)
FR (1) FR1467066A (de)
GB (1) GB1081318A (de)
NL (1) NL6514605A (de)
SE (1) SE321229B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE292054A (de) * 1971-08-23 1900-01-01
US4165318A (en) * 1977-09-06 1979-08-21 Rohm And Haas Company Formaldehyde stabilized coating compositions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767174A (en) * 1954-12-29 1956-10-16 Schenley Ind Inc N-benzylidene and n-quinolylmethylene-substituted 2-aminobenzisothiazolones and processes for their preparation
US2767172A (en) * 1954-12-29 1956-10-16 Schenley Ind Inc Process for the production of n-benzylidene and n-quinolylmethylene-substituted 2-aminobenz-isothiazolones
US3065123A (en) * 1959-06-24 1962-11-20 Ici Ltd Process for control of micro-organisms

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2373136A (en) * 1943-11-23 1945-04-10 Du Pont Ethylene urea derivatives
AT219596B (de) * 1960-03-24 1962-02-12 Wander Ag Dr A Verfahren zur Herstellung von neuen Benzisothiazolonderivaten

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767174A (en) * 1954-12-29 1956-10-16 Schenley Ind Inc N-benzylidene and n-quinolylmethylene-substituted 2-aminobenzisothiazolones and processes for their preparation
US2767172A (en) * 1954-12-29 1956-10-16 Schenley Ind Inc Process for the production of n-benzylidene and n-quinolylmethylene-substituted 2-aminobenz-isothiazolones
US3065123A (en) * 1959-06-24 1962-11-20 Ici Ltd Process for control of micro-organisms
GB918869A (en) * 1959-06-24 1963-02-20 Ici Ltd Process for the control of micro-organisms

Also Published As

Publication number Publication date
DE1215304C2 (de) 1966-11-24
AT258476B (de) 1967-11-27
CH435847A (de) 1967-05-15
US3522265A (en) 1970-07-28
CH1437265A4 (de) 1967-06-15
BE671490A (de) 1966-02-14
FR1467066A (fr) 1967-01-27
NL6514605A (de) 1966-05-11
SE321229B (de) 1970-03-02
GB1081318A (en) 1967-08-31
CH444568A (de) 1968-02-29

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