DE1214511B - Verfahren zum AEtzen von Halbleiter-Bauelementen - Google Patents

Verfahren zum AEtzen von Halbleiter-Bauelementen

Info

Publication number
DE1214511B
DE1214511B DEW30274A DEW0030274A DE1214511B DE 1214511 B DE1214511 B DE 1214511B DE W30274 A DEW30274 A DE W30274A DE W0030274 A DEW0030274 A DE W0030274A DE 1214511 B DE1214511 B DE 1214511B
Authority
DE
Germany
Prior art keywords
solution
semiconductor components
germanium
temperature
platelets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW30274A
Other languages
German (de)
English (en)
Inventor
Edwin James Pritchard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1214511B publication Critical patent/DE1214511B/de
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/40Alkaline compositions for etching other metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
DEW30274A 1960-07-06 1961-07-01 Verfahren zum AEtzen von Halbleiter-Bauelementen Pending DE1214511B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4104260A 1960-07-06 1960-07-06

Publications (1)

Publication Number Publication Date
DE1214511B true DE1214511B (de) 1966-04-14

Family

ID=21914413

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW30274A Pending DE1214511B (de) 1960-07-06 1961-07-01 Verfahren zum AEtzen von Halbleiter-Bauelementen

Country Status (5)

Country Link
BE (1) BE605794A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH429364A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1214511B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB909228A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (2) NL266770A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356500A (en) * 1964-09-28 1967-12-05 Santa Barbara Res Ct Production of infrared detector patterns
DE1544281C3 (de) * 1966-03-04 1975-04-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Dotieren von Silicium- Halbleitermaterial
CN114316990B (zh) * 2021-12-09 2023-04-07 湖北兴福电子材料股份有限公司 一种高蚀刻锥角的锗蚀刻液

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB773860A (en) * 1954-12-01 1957-05-01 Philips Electrical Ind Ltd Improvements in or relating to methods of etching away a surface layer of semi-conductive bodies of a tellurideof a bivalent metal
DE1058333B (de) * 1954-12-01 1959-05-27 Philips Nv Verfahren zum Abaetzen der Oberflaeche eines halbleitenden Koerpers aus einem Tellurid eines zweiwertigen Metalls

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB773860A (en) * 1954-12-01 1957-05-01 Philips Electrical Ind Ltd Improvements in or relating to methods of etching away a surface layer of semi-conductive bodies of a tellurideof a bivalent metal
DE1058333B (de) * 1954-12-01 1959-05-27 Philips Nv Verfahren zum Abaetzen der Oberflaeche eines halbleitenden Koerpers aus einem Tellurid eines zweiwertigen Metalls

Also Published As

Publication number Publication date
BE605794A (fr) 1961-11-03
GB909228A (en) 1962-10-31
CH429364A (de) 1967-01-31
NL266770A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL132314C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Similar Documents

Publication Publication Date Title
DE3610587A1 (de) Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
Rosenbaum Non-basal slip and twin accommodation in zinc crystals
DE1279848B (de) Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers
DE1214511B (de) Verfahren zum AEtzen von Halbleiter-Bauelementen
EP0070373A1 (de) Verfahren zur Verminderung der Korrosion von nicht amalgamiertem Zink
DE2219507A1 (de) Verfahren und Mittel zum Anzeigen von Temperaturveranderungen einer Ware, vor zugsweise eines Lebensmittels
DE1193766B (de) Verfahren zur Stabilisierung der durch AEtzen erzielten Sperreigenschaften von Halbleiteranordnungen
DE2427300C2 (de) Verfahren zur Herstellung einer ternären Legierung aus Blei, Calcium und Aluminium
DE1119625B (de) Verfahren zum AEtzen der Oberflaeche eines Halbleiterkoerpers
AT226279B (de) Verfahren zum Ätzen von Halbleiterelementen
DE966905C (de) Verfahren zur Herstellung elektrisch unsymmetrisch leitender Systeme
DE2006609C3 (de) Verfahren zur anodischen Behandlung von Eisenoberflächen
DE869310C (de) Verfahren zur Herstellung hochkapazitiver keramischer Dielektriken
DE2237825C3 (de) Verfahren zum Reinigen von gesägten Halbleiterscheiben und dessen Verwendung zum Reinigen von Siliciumscheiben
SU916597A1 (ru) Водный раствор для полирования титановых . и циркониевых сплавов 1
DE2324636A1 (de) Kornfeinungsmittel fuer aluminium und aluminiumlegierungen
DE1218257B (de) Verfahren zum Weichloeten mittels Roehrenloetzinn
DE1193211B (de) Mikro-Glaskuegelchen zur Verwendung als Kern-brennstoff in Reaktoren
AT218570B (de) Verfahren zur großflächigen Kontaktierung eines einkristallinen Siliziumkörpers
DE2220963A1 (de) Verfahren zur Herstellung von Galliumarsenid-Bauelementen
DE1913136B2 (de) Verfahren zur erhoehung der mechanischen festigkeit von alkalihaltigem glas von duenner abmessung durch ionenaustausch
DE2149359C3 (de) Verfahren zur Herstellung von wenigstens an der Oberfläche aus Bor bestehenden Drähten
DE805807C (de) Entfernen von Magnesium aus Aluminium oder Aluminiumlegierungen
DE3145931C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE1521953C (de) Verfahren zur Herstellung eines Oxidbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial