GB909228A - Etching of semiconductive elements - Google Patents
Etching of semiconductive elementsInfo
- Publication number
- GB909228A GB909228A GB1251361A GB1251361A GB909228A GB 909228 A GB909228 A GB 909228A GB 1251361 A GB1251361 A GB 1251361A GB 1251361 A GB1251361 A GB 1251361A GB 909228 A GB909228 A GB 909228A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- active portion
- elements
- acetic acid
- passive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
Abstract
A method of etching semi-conductive elements such as germanium wafers to a desired size comprises agitating the elements in a passive portion of an etching solution, and gradually adding an active portion at a rate such as to control the temperature of the solution within desired limits. The active portion is an oxidant, such as hydrogen peroxide, and the passive portion is an alkaline hydroxide, carbonate, borate or phosphate, or a salt of acetic acid. In another form, the active portion is nitric acid and the passive portion is hydrofluoric acid mixed with acetic acid.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4104260A | 1960-07-06 | 1960-07-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB909228A true GB909228A (en) | 1962-10-31 |
Family
ID=21914413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1251361A Expired GB909228A (en) | 1960-07-06 | 1961-04-07 | Etching of semiconductive elements |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE605794A (en) |
CH (1) | CH429364A (en) |
DE (1) | DE1214511B (en) |
GB (1) | GB909228A (en) |
NL (2) | NL266770A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356500A (en) * | 1964-09-28 | 1967-12-05 | Santa Barbara Res Ct | Production of infrared detector patterns |
US3480474A (en) * | 1966-03-04 | 1969-11-25 | Siemens Ag | Method for preparing semiconductor crystals |
CN114316990A (en) * | 2021-12-09 | 2022-04-12 | 湖北兴福电子材料有限公司 | Germanium etching solution with high etching cone angle |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1058333B (en) * | 1954-12-01 | 1959-05-27 | Philips Nv | Process for etching the surface of a semiconducting body made of a telluride of a divalent metal |
NL192840A (en) * | 1954-12-01 |
-
0
- NL NL132314D patent/NL132314C/xx active
- NL NL266770D patent/NL266770A/xx unknown
-
1961
- 1961-04-07 GB GB1251361A patent/GB909228A/en not_active Expired
- 1961-06-30 CH CH772761A patent/CH429364A/en unknown
- 1961-07-01 DE DEW30274A patent/DE1214511B/en active Pending
- 1961-07-05 BE BE605794A patent/BE605794A/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356500A (en) * | 1964-09-28 | 1967-12-05 | Santa Barbara Res Ct | Production of infrared detector patterns |
US3480474A (en) * | 1966-03-04 | 1969-11-25 | Siemens Ag | Method for preparing semiconductor crystals |
CN114316990A (en) * | 2021-12-09 | 2022-04-12 | 湖北兴福电子材料有限公司 | Germanium etching solution with high etching cone angle |
Also Published As
Publication number | Publication date |
---|---|
BE605794A (en) | 1961-11-03 |
NL132314C (en) | |
DE1214511B (en) | 1966-04-14 |
NL266770A (en) | |
CH429364A (en) | 1967-01-31 |
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