DE1195420B - Verfahren zur Schwemmzonenbehandlung eines Stabes aus kristallischem Halbleitermaterial - Google Patents
Verfahren zur Schwemmzonenbehandlung eines Stabes aus kristallischem HalbleitermaterialInfo
- Publication number
- DE1195420B DE1195420B DED43296A DED0043296A DE1195420B DE 1195420 B DE1195420 B DE 1195420B DE D43296 A DED43296 A DE D43296A DE D0043296 A DED0043296 A DE D0043296A DE 1195420 B DE1195420 B DE 1195420B
- Authority
- DE
- Germany
- Prior art keywords
- rod
- diameter
- zone
- coil
- rods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 39
- 239000000463 material Substances 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000011282 treatment Methods 0.000 title claims description 15
- 230000008569 process Effects 0.000 title claims description 12
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 230000001965 increasing effect Effects 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 15
- 239000004020 conductor Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002231 Czochralski process Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000035784 germination Effects 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US250148A US3249406A (en) | 1963-01-08 | 1963-01-08 | Necked float zone processing of silicon rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1195420B true DE1195420B (de) | 1965-06-24 |
Family
ID=22946486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DED43296A Pending DE1195420B (de) | 1963-01-08 | 1964-01-07 | Verfahren zur Schwemmzonenbehandlung eines Stabes aus kristallischem Halbleitermaterial |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3249406A (enrdf_load_stackoverflow) |
| BE (1) | BE642180A (enrdf_load_stackoverflow) |
| CH (1) | CH421911A (enrdf_load_stackoverflow) |
| DE (1) | DE1195420B (enrdf_load_stackoverflow) |
| GB (2) | GB1022790A (enrdf_load_stackoverflow) |
| NL (2) | NL302045A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3424886A (en) * | 1966-10-27 | 1969-01-28 | Ajax Magnethermic Corp | Induction heating |
| US3489875A (en) * | 1966-10-27 | 1970-01-13 | Ajax Magnethermic Corp | Apparatus for induction heating of slabs |
| DE1802524B1 (de) * | 1968-10-11 | 1970-06-04 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
| US3612806A (en) * | 1970-02-26 | 1971-10-12 | Park Ohio Industries Inc | Inductor for internal heating |
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
| JP2759604B2 (ja) * | 1993-10-21 | 1998-05-28 | 信越半導体株式会社 | 誘導加熱コイル |
| JP7633637B2 (ja) * | 2020-07-28 | 2025-02-20 | 株式会社ノベルクリスタルテクノロジー | 単結晶製造装置及び単結晶の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2481071A (en) * | 1945-07-25 | 1949-09-06 | Chrysler Corp | High-frequency induction heating device |
| GB831305A (en) * | 1955-01-11 | 1960-03-30 | Ass Elect Ind | Improvements relating to the refining of heavy metals by zone melting |
| GB831304A (en) * | 1952-08-01 | 1960-03-30 | Standard Telephones Cables Ltd | Improvements in or relating to refining processes for semiconductor and other materials |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL69280C (enrdf_load_stackoverflow) * | 1944-10-18 | |||
| US2481008A (en) * | 1945-06-27 | 1949-09-06 | Induction Heating Corp | Multiturn split inductor |
| US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
| US2825120A (en) * | 1954-05-11 | 1958-03-04 | Eastman Kodak Co | Synthetic filament |
| US3002821A (en) * | 1956-10-22 | 1961-10-03 | Texas Instruments Inc | Means for continuous fabrication of graded junction transistors |
| US3046100A (en) * | 1958-01-20 | 1962-07-24 | Du Pont | Zone melting of semiconductive material |
| US3065062A (en) * | 1958-06-03 | 1962-11-20 | Wacker Chemie Gmbh | Process for purifying and recrystallizing metals, non-metals, their compounds or alloys |
| US3023091A (en) * | 1959-03-02 | 1962-02-27 | Raytheon Co | Methods of heating and levitating molten material |
| NL249428A (enrdf_load_stackoverflow) * | 1959-03-16 | |||
| NL252060A (enrdf_load_stackoverflow) * | 1959-05-29 | |||
| US2990259A (en) * | 1959-09-03 | 1961-06-27 | Paul L Moody | Syringe-type single-crystal furnace |
| US3100250A (en) * | 1961-04-07 | 1963-08-06 | Herczog Andrew | Zone melting apparatus |
-
0
- NL NL126241D patent/NL126241C/xx active
- NL NL302045D patent/NL302045A/xx unknown
-
1961
- 1961-08-02 GB GB279/65A patent/GB1022790A/en not_active Expired
-
1963
- 1963-01-08 US US250148A patent/US3249406A/en not_active Expired - Lifetime
- 1963-12-04 GB GB47918/63A patent/GB995399A/en not_active Expired
-
1964
- 1964-01-07 DE DED43296A patent/DE1195420B/de active Pending
- 1964-01-07 BE BE642180A patent/BE642180A/xx unknown
- 1964-01-07 CH CH11064A patent/CH421911A/de unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2481071A (en) * | 1945-07-25 | 1949-09-06 | Chrysler Corp | High-frequency induction heating device |
| GB831304A (en) * | 1952-08-01 | 1960-03-30 | Standard Telephones Cables Ltd | Improvements in or relating to refining processes for semiconductor and other materials |
| GB831305A (en) * | 1955-01-11 | 1960-03-30 | Ass Elect Ind | Improvements relating to the refining of heavy metals by zone melting |
Also Published As
| Publication number | Publication date |
|---|---|
| CH421911A (de) | 1966-10-15 |
| NL126241C (enrdf_load_stackoverflow) | |
| US3249406A (en) | 1966-05-03 |
| BE642180A (enrdf_load_stackoverflow) | 1964-07-17 |
| NL302045A (enrdf_load_stackoverflow) | |
| GB1022790A (en) | 1966-03-16 |
| GB995399A (en) | 1965-06-16 |
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