DE1187326B - Verfahren zur Herstellung einer Silizium-Schaltdiode - Google Patents

Verfahren zur Herstellung einer Silizium-Schaltdiode

Info

Publication number
DE1187326B
DE1187326B DEW26170A DEW0026170A DE1187326B DE 1187326 B DE1187326 B DE 1187326B DE W26170 A DEW26170 A DE W26170A DE W0026170 A DEW0026170 A DE W0026170A DE 1187326 B DE1187326 B DE 1187326B
Authority
DE
Germany
Prior art keywords
gold
silicon
diffusion
temperature
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW26170A
Other languages
German (de)
English (en)
Inventor
David Francis Ciccolella
John Heslop Forster
Raymond Lester Rulison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1187326B publication Critical patent/DE1187326B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DEW26170A 1958-08-13 1959-08-10 Verfahren zur Herstellung einer Silizium-Schaltdiode Pending DE1187326B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US754894A US3067485A (en) 1958-08-13 1958-08-13 Semiconductor diode

Publications (1)

Publication Number Publication Date
DE1187326B true DE1187326B (de) 1965-02-18

Family

ID=25036844

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW26170A Pending DE1187326B (de) 1958-08-13 1959-08-10 Verfahren zur Herstellung einer Silizium-Schaltdiode

Country Status (6)

Country Link
US (1) US3067485A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE580578A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1187326B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1232232A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB922617A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL241982A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321390A1 (de) * 1972-05-02 1973-11-15 Matsushita Electronics Corp Verfahren zur herstellung von halbleitervorrichtungen
DE2341311A1 (de) * 1973-08-16 1975-03-20 Licentia Gmbh Verfahren zum einstellen der lebensdauer von ladungstraegern in halbleiterkoerpern

Families Citing this family (43)

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DE1212641B (de) * 1958-09-12 1966-03-17 Siemens Ag Verfahren zur Getterung von unerwuenschten Eisenspuren aus Siliziumkoerpern fuer Halbleiteranordnungen
NL122120C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1959-06-30
DE1156177B (de) * 1960-09-02 1963-10-24 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von Leistungsgleichrichtern aus Silizium
DE1295089B (de) * 1960-12-23 1969-05-14 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors
DE1154871B (de) * 1961-01-13 1963-09-26 Bbc Brown Boveri & Cie Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang
US3242392A (en) * 1961-04-06 1966-03-22 Nippon Electric Co Low rc semiconductor diode
US3227933A (en) * 1961-05-17 1966-01-04 Fairchild Camera Instr Co Diode and contact structure
US3121808A (en) * 1961-09-14 1964-02-18 Bell Telephone Labor Inc Low temperature negative resistance device
US3233305A (en) * 1961-09-26 1966-02-08 Ibm Switching transistors with controlled emitter-base breakdown
NL284623A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1961-10-24
DE1258983B (de) * 1961-12-05 1968-01-18 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang
US3211096A (en) * 1962-05-03 1965-10-12 Texaco Experiment Inc Initiator with a p-n peltier thermoelectric effect junction
US3300841A (en) * 1962-07-17 1967-01-31 Texas Instruments Inc Method of junction passivation and product
NL297288A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-08-31
NL301034A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-11-27
NL301451A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-12-17
NL303035A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-02-06 1900-01-01
US3196329A (en) * 1963-03-08 1965-07-20 Texas Instruments Inc Symmetrical switching diode
US3244566A (en) * 1963-03-20 1966-04-05 Trw Semiconductors Inc Semiconductor and method of forming by diffusion
DE1282793B (de) * 1963-05-27 1968-11-14 Siemens Ag Transistoranordnung mit Gehaeuse
US3313012A (en) * 1963-11-13 1967-04-11 Texas Instruments Inc Method for making a pnpn device by diffusing
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3423647A (en) * 1964-07-30 1969-01-21 Nippon Electric Co Semiconductor device having regions with preselected different minority carrier lifetimes
US3502515A (en) * 1964-09-28 1970-03-24 Philco Ford Corp Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
DE1279847B (de) * 1965-01-13 1968-10-10 Siemens Ag Kapazitive Halbleiterdiode und Verfahren zu ihrer Herstellung
US3421057A (en) * 1965-08-23 1969-01-07 Ibm High speed switching transistor and fabrication method therefor
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
US3522164A (en) * 1965-10-21 1970-07-28 Texas Instruments Inc Semiconductor surface preparation and device fabrication
US3473976A (en) * 1966-03-31 1969-10-21 Ibm Carrier lifetime killer doping process for semiconductor structures and the product formed thereby
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
US3427515A (en) * 1966-06-27 1969-02-11 Rca Corp High voltage semiconductor transistor
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3464868A (en) * 1967-01-13 1969-09-02 Bell Telephone Labor Inc Method of enhancing transistor switching characteristics
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
FR2121405A1 (en) * 1971-01-11 1972-08-25 Comp Generale Electricite Integrated circuit with resistor(s) - applied without attacking silicon substrate with resistor-trimming etchant
US4126713A (en) * 1976-11-15 1978-11-21 Trw Inc. Forming films on semiconductor surfaces with metal-silica solution
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
US4253280A (en) * 1979-03-26 1981-03-03 Western Electric Company, Inc. Method of labelling directional characteristics of an article having two opposite major surfaces
JPS5821342A (ja) * 1981-07-31 1983-02-08 Hitachi Ltd 半導体装置
DE3532821A1 (de) * 1985-09-13 1987-03-26 Siemens Ag Leuchtdiode (led) mit sphaerischer linse
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
CN103050545A (zh) * 2011-10-14 2013-04-17 上海韦尔半导体股份有限公司 Tvs二极管及其制作方法

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BE552308A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-10-29
DE1012696B (de) * 1954-07-06 1957-07-25 Siemens Ag Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges
DE1018560B (de) * 1955-08-19 1957-10-31 Siemens Ag Halbleiteranordnung mit einem oder mehreren p-n-UEbergaengen, vorzugsweise fuer Schaltzwecke oder zur Schwingungserzeugung, deren Durchbruchscharakteristik einen negativen Ast aufweist
DE1029483B (de) * 1954-01-28 1958-05-08 Marconi Wireless Telegraph Co Verfahren zur Herstellung von npn- oder pnp-Transistoren
GB799670A (en) * 1954-02-04 1958-08-13 Gen Electric Improvements in electric current control devices utilising the semi-conductor germanium

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US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
NL82014C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1949-11-30
US2859140A (en) * 1951-07-16 1958-11-04 Sylvania Electric Prod Method of introducing impurities into a semi-conductor
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
US2833969A (en) * 1953-12-01 1958-05-06 Rca Corp Semi-conductor devices and methods of making same
BE549320A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1955-09-02
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1029483B (de) * 1954-01-28 1958-05-08 Marconi Wireless Telegraph Co Verfahren zur Herstellung von npn- oder pnp-Transistoren
GB799670A (en) * 1954-02-04 1958-08-13 Gen Electric Improvements in electric current control devices utilising the semi-conductor germanium
DE1012696B (de) * 1954-07-06 1957-07-25 Siemens Ag Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges
DE1018560B (de) * 1955-08-19 1957-10-31 Siemens Ag Halbleiteranordnung mit einem oder mehreren p-n-UEbergaengen, vorzugsweise fuer Schaltzwecke oder zur Schwingungserzeugung, deren Durchbruchscharakteristik einen negativen Ast aufweist
BE552308A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-10-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321390A1 (de) * 1972-05-02 1973-11-15 Matsushita Electronics Corp Verfahren zur herstellung von halbleitervorrichtungen
DE2341311A1 (de) * 1973-08-16 1975-03-20 Licentia Gmbh Verfahren zum einstellen der lebensdauer von ladungstraegern in halbleiterkoerpern

Also Published As

Publication number Publication date
NL241982A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01
US3067485A (en) 1962-12-11
BE580578A (fr) 1959-11-03
FR1232232A (fr) 1960-10-06
GB922617A (en) 1963-04-03

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