DE1168396B - Verfahren zur Veraenderung der elektrischen Leitfaehigkeit von Diamant - Google Patents
Verfahren zur Veraenderung der elektrischen Leitfaehigkeit von DiamantInfo
- Publication number
- DE1168396B DE1168396B DEG35784A DEG0035784A DE1168396B DE 1168396 B DE1168396 B DE 1168396B DE G35784 A DEG35784 A DE G35784A DE G0035784 A DEG0035784 A DE G0035784A DE 1168396 B DE1168396 B DE 1168396B
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- aluminum
- diamonds
- boron
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims description 86
- 229910003460 diamond Inorganic materials 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 15
- 230000008569 process Effects 0.000 title description 8
- 239000013078 crystal Substances 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 25
- 229910052796 boron Inorganic materials 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 229910052580 B4C Inorganic materials 0.000 claims description 5
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 4
- -1 aluminum compound Chemical class 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 239000012190 activator Substances 0.000 description 14
- 229910002804 graphite Inorganic materials 0.000 description 14
- 239000010439 graphite Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000005087 graphitization Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241001676573 Minium Species 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/069—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US135273A US3134739A (en) | 1961-08-31 | 1961-08-31 | Method for and product produced by the introduction of aluminum atoms into the surface of diamond crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1168396B true DE1168396B (de) | 1964-04-23 |
Family
ID=22467341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEG35784A Pending DE1168396B (de) | 1961-08-31 | 1962-08-24 | Verfahren zur Veraenderung der elektrischen Leitfaehigkeit von Diamant |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3134739A (OSRAM) |
| BE (1) | BE621736A (OSRAM) |
| DE (1) | DE1168396B (OSRAM) |
| NL (2) | NL282751A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8110041B2 (en) | 2002-09-06 | 2012-02-07 | Daniel James Twitchen | Coloured diamond |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3268457A (en) * | 1962-04-05 | 1966-08-23 | Armando A Giardini | Method of creating electrically semiconducting diamond |
| US3630678A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
| US3607061A (en) * | 1968-06-26 | 1971-09-21 | Univ Case Western Reserve | Manufacture of synthetic diamonds |
| US3630679A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
| US3615208A (en) * | 1969-02-06 | 1971-10-26 | John W Byron | Diamond growth process |
| US6692714B2 (en) * | 1997-10-17 | 2004-02-17 | Suresh Shankarappa Vagarali | High pressure/high temperature production of colorless and fancy-colored diamonds |
| CA2382785A1 (en) * | 1999-08-25 | 2001-03-01 | General Electric Company | High pressure/high temperature production of colored diamonds |
| KR100812112B1 (ko) * | 2000-08-11 | 2008-03-12 | 벨라타이레 인터내셔날 엘엘씨. | 다이아몬드의 고압 및 고온 제조방법 |
| US6811610B2 (en) * | 2002-06-03 | 2004-11-02 | Diamond Innovations, Inc. | Method of making enhanced CVD diamond |
| US20050249655A1 (en) * | 2003-01-08 | 2005-11-10 | Vagarali Suresh S | High pressure/high temperature production of colorless and fancy-colored diamonds |
| US8961920B1 (en) | 2011-04-26 | 2015-02-24 | Us Synthetic Corporation | Methods of altering the color of a diamond by irradiation and high-pressure/high-temperature processing |
| US8858665B2 (en) | 2011-04-28 | 2014-10-14 | Robert Frushour | Method for making fine diamond PDC |
| US8741010B2 (en) | 2011-04-28 | 2014-06-03 | Robert Frushour | Method for making low stress PDC |
| US8974559B2 (en) | 2011-05-12 | 2015-03-10 | Robert Frushour | PDC made with low melting point catalyst |
| US8828110B2 (en) | 2011-05-20 | 2014-09-09 | Robert Frushour | ADNR composite |
| US9061264B2 (en) | 2011-05-19 | 2015-06-23 | Robert H. Frushour | High abrasion low stress PDC |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2947609A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Diamond synthesis |
-
0
- BE BE621736D patent/BE621736A/xx unknown
- NL NL136558D patent/NL136558C/xx active
- NL NL282751D patent/NL282751A/xx unknown
-
1961
- 1961-08-31 US US135273A patent/US3134739A/en not_active Expired - Lifetime
-
1962
- 1962-08-24 DE DEG35784A patent/DE1168396B/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8110041B2 (en) | 2002-09-06 | 2012-02-07 | Daniel James Twitchen | Coloured diamond |
Also Published As
| Publication number | Publication date |
|---|---|
| US3134739A (en) | 1964-05-26 |
| BE621736A (OSRAM) | |
| NL282751A (OSRAM) | |
| NL136558C (OSRAM) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1165561B (de) | Verfahren zur synthetischen Herstellung von elektrisch leitenden Diamanten | |
| DE2412339C2 (de) | Monolithische hochdichte Körper aus Siliciumnitrid und Siliciumcarbid | |
| DE1142346B (de) | Verfahren zur Synthese von Diamanten | |
| CH433215A (de) | Verfahren zur Erhöhung der elektrischen Leitfähigkeit von Diamant | |
| US3134739A (en) | Method for and product produced by the introduction of aluminum atoms into the surface of diamond crystals | |
| DE2333189C2 (de) | Hochtemperatur-Heißleiter | |
| DE1544190C3 (de) | Verfahren zum Einführen von Störstellen in Diamant | |
| DE1640218A1 (de) | Thermistor | |
| DE2429107A1 (de) | Kathode zur reduktion des sauerstoffs und eine solche kathode enthaltendes wiederaufladbares element | |
| DE2934968A1 (de) | Gesintertes siliciumcarbidprodukt und verfahren zu seiner herstellung | |
| DE2000088B2 (de) | Anisotropes thermoelement | |
| DE1169902B (de) | Verfahren zur Herstellung von elektrisch leitendem kubischem Bornitrid | |
| DE3216045C2 (de) | Hochtemperatur-NTC-Thermistor | |
| DE2343278A1 (de) | Wolframfaden | |
| DE2100188C3 (de) | Verfahren zur Herstelug von polykristallinen Diamantaggregaten | |
| AT231406B (de) | Verfahren zur Herstellung synthetischer, elektrisch leitender Diamanten | |
| DE1159405B (de) | Verfahren zur synthetischen Herstellung elektrisch leitender Diamanten | |
| CH450374A (de) | Verfahren zur Herstellung eines Presslings | |
| DE2226550C3 (de) | Verfahren zur Synthese von Diamanten | |
| DE1615869A1 (de) | Verfahren zur Stabilisierung des Widerstandes von Halbleitern | |
| DE1792696C2 (de) | Verfahren zur Herstellung von kubischem Bornitrid | |
| DE1048986B (de) | Verfahren zur Herstellung von aus koernigem Siliziumkarbid bestehenden Halbleiterwiderstaenden | |
| DE1169833B (de) | Verfahren zur Herstellung eines Schleif- oder Schneidkoerpers | |
| CH472336A (de) | Verfahren zur Umwandlung von Kohlenstoff in Diamant und Hochdruckanlage zur Durchführung des Verfahrens | |
| DE1159400B (de) | Verfahren zur Herstellung von kubischem Bornitrid |