DE1163978B - Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente - Google Patents

Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente

Info

Publication number
DE1163978B
DE1163978B DEL39898A DEL0039898A DE1163978B DE 1163978 B DE1163978 B DE 1163978B DE L39898 A DEL39898 A DE L39898A DE L0039898 A DEL0039898 A DE L0039898A DE 1163978 B DE1163978 B DE 1163978B
Authority
DE
Germany
Prior art keywords
semiconductor
oxygen
layer
decomposed
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEL39898A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Guenter K Dipl-Phys
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL282407D priority Critical patent/NL282407A/xx
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DEL39898A priority patent/DE1163978B/de
Publication of DE1163978B publication Critical patent/DE1163978B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
DEL39898A 1961-08-30 1961-08-30 Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente Pending DE1163978B (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
NL282407D NL282407A (OSRAM) 1961-08-30
DEL39898A DE1163978B (de) 1961-08-30 1961-08-30 Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL39898A DE1163978B (de) 1961-08-30 1961-08-30 Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente

Publications (1)

Publication Number Publication Date
DE1163978B true DE1163978B (de) 1964-02-27

Family

ID=7268844

Family Applications (1)

Application Number Title Priority Date Filing Date
DEL39898A Pending DE1163978B (de) 1961-08-30 1961-08-30 Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente

Country Status (2)

Country Link
DE (1) DE1163978B (OSRAM)
NL (1) NL282407A (OSRAM)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE969465C (de) * 1953-07-28 1958-06-04 Siemens Ag Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DE1037016B (de) * 1956-12-06 1958-08-21 Rca Corp Halbleitereinrichtung, wie Transistor, Legierungsdiode od. dgl. und Verfahren zu deren Herstellung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE969465C (de) * 1953-07-28 1958-06-04 Siemens Ag Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1037016B (de) * 1956-12-06 1958-08-21 Rca Corp Halbleitereinrichtung, wie Transistor, Legierungsdiode od. dgl. und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
NL282407A (OSRAM)

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