DE1162436B - Thermoelektrische Anordnung - Google Patents
Thermoelektrische AnordnungInfo
- Publication number
- DE1162436B DE1162436B DEW28147A DEW0028147A DE1162436B DE 1162436 B DE1162436 B DE 1162436B DE W28147 A DEW28147 A DE W28147A DE W0028147 A DEW0028147 A DE W0028147A DE 1162436 B DE1162436 B DE 1162436B
- Authority
- DE
- Germany
- Prior art keywords
- binary
- silver
- selenide
- compounds
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 30
- 239000006104 solid solution Substances 0.000 claims description 30
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 15
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims description 14
- HVNICERLRCUPEH-UHFFFAOYSA-N [Se].[Bi].[Ag] Chemical compound [Se].[Bi].[Ag] HVNICERLRCUPEH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 12
- 229910002665 PbTe Inorganic materials 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000010587 phase diagram Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MXBPEVXRPBRJNW-UHFFFAOYSA-N antimony;selanylidenesilver Chemical compound [Sb].[Ag]=[Se] MXBPEVXRPBRJNW-UHFFFAOYSA-N 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- -1 Sil-o-cell avoided Chemical compound 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- QVZRYJKIPIMENI-UHFFFAOYSA-N [Bi].[Ag].[Sb] Chemical compound [Bi].[Ag].[Sb] QVZRYJKIPIMENI-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US826594A US2995613A (en) | 1959-07-13 | 1959-07-13 | Semiconductive materials exhibiting thermoelectric properties |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1162436B true DE1162436B (de) | 1964-02-06 |
Family
ID=25247002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEW28147A Pending DE1162436B (de) | 1959-07-13 | 1960-07-06 | Thermoelektrische Anordnung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2995613A (en, 2012) |
| BE (1) | BE592719A (en, 2012) |
| DE (1) | DE1162436B (en, 2012) |
| GB (1) | GB931008A (en, 2012) |
| NL (2) | NL113674C (en, 2012) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL257146A (en, 2012) * | 1960-10-22 | |||
| US3061657A (en) * | 1960-12-07 | 1962-10-30 | Rca Corp | Thermoelectric compositions and devices utilizing them |
| US3073883A (en) * | 1961-07-17 | 1963-01-15 | Westinghouse Electric Corp | Thermoelectric material |
| US4447277A (en) * | 1982-01-22 | 1984-05-08 | Energy Conversion Devices, Inc. | Multiphase thermoelectric alloys and method of making same |
| US4588520A (en) * | 1982-09-03 | 1986-05-13 | Energy Conversion Devices, Inc. | Powder pressed thermoelectric materials and method of making same |
| US6312617B1 (en) * | 1998-10-13 | 2001-11-06 | Board Of Trustees Operating Michigan State University | Conductive isostructural compounds |
| WO2005036660A2 (en) * | 2003-09-12 | 2005-04-21 | Board Of Trustees Operating Michigan State University | Silver-containing thermoelectric compounds |
| US8481843B2 (en) * | 2003-09-12 | 2013-07-09 | Board Of Trustees Operating Michigan State University | Silver-containing p-type semiconductor |
| CN112607714B (zh) * | 2021-01-07 | 2023-07-25 | 安徽大学绿色产业创新研究院 | 一种PbSe基热电材料的制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2685608A (en) * | 1951-11-02 | 1954-08-03 | Siemens Ag | Thermoelement, particularly for the electrothermic production of cold |
| DE1054519B (de) * | 1956-12-18 | 1959-04-09 | Gen Electric Co Ltd | Thermoelement und Verfahren zu seiner Herstellung |
| DE1059940B (de) * | 1956-07-31 | 1959-06-25 | Toho Dentan Kabushiki Kaisha | Wismut-Tellur-Thermoelement zur elektrothermischen Kaelteerzeugung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE543674A (en, 2012) * | 1954-12-15 | 1955-12-30 | ||
| US2882468A (en) * | 1957-05-10 | 1959-04-14 | Bell Telephone Labor Inc | Semiconducting materials and devices made therefrom |
-
0
- NL NL253488D patent/NL253488A/xx unknown
- NL NL113674D patent/NL113674C/xx active
-
1959
- 1959-07-13 US US826594A patent/US2995613A/en not_active Expired - Lifetime
-
1960
- 1960-06-29 GB GB22721/60D patent/GB931008A/en not_active Expired
- 1960-07-06 DE DEW28147A patent/DE1162436B/de active Pending
- 1960-07-07 BE BE592719A patent/BE592719A/fr unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2685608A (en) * | 1951-11-02 | 1954-08-03 | Siemens Ag | Thermoelement, particularly for the electrothermic production of cold |
| DE1059940B (de) * | 1956-07-31 | 1959-06-25 | Toho Dentan Kabushiki Kaisha | Wismut-Tellur-Thermoelement zur elektrothermischen Kaelteerzeugung |
| DE1054519B (de) * | 1956-12-18 | 1959-04-09 | Gen Electric Co Ltd | Thermoelement und Verfahren zu seiner Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| NL113674C (en, 2012) | |
| BE592719A (fr) | 1960-10-31 |
| US2995613A (en) | 1961-08-08 |
| GB931008A (en) | 1963-07-10 |
| NL253488A (en, 2012) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2007104601A2 (de) | Dotierte bleitelluride fuer thermoelektrische anwendungen | |
| DE1295043B (de) | Thermoelement zum Umwandeln von Waermeenergie in elektrische Energie mit einem wenigstens ueber einen Teil seiner Laenge aus einer Germanium-Silicium-Legierung bestehenden Schenkel | |
| DE102007014499A1 (de) | Mit Zinn-Antimon-Telluriden dotierte Pb-Te-Verbindungen für thermoelektrische Generatoren oder Peltier-Anordnungen | |
| WO2009098248A2 (de) | Dotierte zinntelluride fuer thermoelektrische anwendungen | |
| DE1197945B (de) | Thermoelektrische Kuehleinrichtung | |
| DE102010018760A1 (de) | Thermoelektrisches Material mit einer mit mehreren Übergangsmetallen dotierten Typ I-Clathrat-Kristallstruktur | |
| DE2429507A1 (de) | N-leitende amorphe halbleitermaterialien, verfahren zu deren herstellung und vorrichtungen, die solche enthalten | |
| DE1054519B (de) | Thermoelement und Verfahren zu seiner Herstellung | |
| DE1162436B (de) | Thermoelektrische Anordnung | |
| DE2251938A1 (de) | Legierung zur thermoelektrischen energieumwandlung, verfahren zu deren herstellung und daraus gebildeter thermoelektrischer energieumwandler | |
| DE1036394B (de) | Verfahren zur Erzeugung einer pn-Verbindung in einem p-Typ-Koerper aus Silizium | |
| DE1106968B (de) | Als Schenkel von Thermoelementen geeignete tellur- und selen- bzw. selen- und schwefelhaltige Bleigrundlegierung | |
| DE960373C (de) | Halbleitendes Material | |
| DE69227274T2 (de) | Supraleitender Gegenstand und Verfahren zur Herstellung diesen supraleitenden Gegenstand | |
| DE1200400B (de) | Thermoelektrische Anordnung | |
| DE872210C (de) | Anordnung zur Waermefoerderung mittels Thermoelementen, insbesondere zur elektrothermischen Kaelteerzeugung | |
| DE1239480B (de) | Halbleitermaterial, Verfahren zu dessen Herstellung sowie dessen Verwendung in insbesondere thermoelektrischen Vorrichtungen | |
| DE2054542A1 (en) | Tin-rich brazing alloy - for joining thermocouple members | |
| DE2123069C2 (de) | Thermoelektrischer Generator | |
| DE1277967C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere einer thermoelektrischen Halbleiteranordnung | |
| DE1489277A1 (de) | Thermoelektrische Halbleitervorrichtung | |
| DE2165169C3 (de) | Legierung, Herstellung derselben und Verwendung derselben für Vorrichtungen zur unmittelbaren thermoelektrischen Energieumwandlung | |
| WO2007104603A2 (de) | Blei-germanium-telluride fuer thermoelektrische anwendungen | |
| DE1131763B (de) | Material fuer Schenkel von Thermoelementen bzw. Peltierelementen | |
| DE1963707B2 (de) | Verfahren zum Herstellen eines ferromagnetische!! Halbleiterbauelements mit gleichrichtendem pn-übergang im Halbleiterkörper |