DE1132097B - Vorrichtung zum Ziehen von Kristallen aus einer Schmelze - Google Patents
Vorrichtung zum Ziehen von Kristallen aus einer SchmelzeInfo
- Publication number
- DE1132097B DE1132097B DEP22565A DEP0022565A DE1132097B DE 1132097 B DE1132097 B DE 1132097B DE P22565 A DEP22565 A DE P22565A DE P0022565 A DEP0022565 A DE P0022565A DE 1132097 B DE1132097 B DE 1132097B
- Authority
- DE
- Germany
- Prior art keywords
- crucible
- melt
- molten
- bath
- baths
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 21
- 239000000155 melt Substances 0.000 title description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000005192 partition Methods 0.000 claims description 5
- 239000012768 molten material Substances 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims description 2
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 20
- 238000002844 melting Methods 0.000 description 13
- 230000008018 melting Effects 0.000 description 13
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 101100493705 Caenorhabditis elegans bath-36 gene Proteins 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- CEUORZQYGODEFX-UHFFFAOYSA-N Aripirazole Chemical compound ClC1=CC=CC(N2CCN(CCCCOC=3C=C4NC(=O)CCC4=CC=3)CC2)=C1Cl CEUORZQYGODEFX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US727441A US2977258A (en) | 1958-04-09 | 1958-04-09 | Production of semiconductors and the like |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1132097B true DE1132097B (de) | 1962-06-28 |
Family
ID=24922672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP22565A Pending DE1132097B (de) | 1958-04-09 | 1959-04-09 | Vorrichtung zum Ziehen von Kristallen aus einer Schmelze |
Country Status (6)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1256626B (de) * | 1963-03-13 | 1967-12-21 | Siemens Ag | Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze |
| DE1294939B (de) * | 1962-12-21 | 1969-05-14 | Siemens Ag | Verfahren und Vorrichtung zur Herstellung von aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3368021A (en) * | 1962-11-15 | 1968-02-06 | Loung Pai Yen | Furnace for refractory metals |
| US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
| DE1243641B (de) * | 1962-12-12 | 1967-07-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze |
| DE1217926B (de) * | 1963-08-17 | 1966-06-02 | Siemens Ag | Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen |
| DE1251721B (de) * | 1963-10-28 | 1967-10-12 | Siemens Aktiengesellschaft, Berlin und München München | Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration |
| DE1264399B (de) * | 1965-06-10 | 1968-03-28 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
| US3370927A (en) * | 1966-02-28 | 1968-02-27 | Westinghouse Electric Corp | Method of angularly pulling continuous dendritic crystals |
| US3405890A (en) * | 1966-05-24 | 1968-10-15 | Eickmann Karl | Control means in fluid-power driven, fluid-borne vehicles |
| DE1544301A1 (de) * | 1966-09-28 | 1970-05-27 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
| US3471266A (en) * | 1967-05-29 | 1969-10-07 | Tyco Laboratories Inc | Growth of inorganic filaments |
| US3607115A (en) * | 1969-10-29 | 1971-09-21 | Gen Motors Corp | Crystal pulling from molten melts including solute introduction means below the seed-melt interface |
| US4125425A (en) * | 1974-03-01 | 1978-11-14 | U.S. Philips Corporation | Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element |
| US4650540A (en) * | 1975-07-09 | 1987-03-17 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
| US4230674A (en) * | 1976-12-27 | 1980-10-28 | Mobil Tyco Solar Energy Corporation | Crucible-die assemblies for growing crystalline bodies of selected shapes |
| US4305298A (en) * | 1978-08-28 | 1981-12-15 | Itt Industries, Inc. | Mechanical resonator arrangements |
| US4190631A (en) * | 1978-09-21 | 1980-02-26 | Western Electric Company, Incorporated | Double crucible crystal growing apparatus |
| US4282184A (en) * | 1979-10-09 | 1981-08-04 | Siltec Corporation | Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace |
| US4454096A (en) * | 1981-06-15 | 1984-06-12 | Siltec Corporation | Crystal growth furnace recharge |
| US4389377A (en) * | 1981-07-10 | 1983-06-21 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for growing a dendritic web |
| US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
| JPS60137891A (ja) * | 1983-12-24 | 1985-07-22 | Sumitomo Electric Ind Ltd | 化合物半導体単結晶引き上げ方法と装置 |
| CA1261715A (en) * | 1984-07-06 | 1989-09-26 | General Signal Corporation | Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique |
| GB2188854A (en) * | 1986-04-09 | 1987-10-14 | Philips Electronic Associated | Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method |
| CA1306407C (en) * | 1987-06-08 | 1992-08-18 | Michio Kida | Apparatus for growing crystals of semiconductor materials |
| US5016683A (en) * | 1990-03-27 | 1991-05-21 | General Signal Corporation | Apparatus for controllably feeding a particulate material |
| US5290395A (en) * | 1990-07-26 | 1994-03-01 | Sumitomo Electric Industries, Ltd. | Method of and apparatus for preparing single crystal |
| JP4059943B2 (ja) * | 1996-10-24 | 2008-03-12 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶製造装置のメルトレシーブ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1119039A (fr) * | 1954-03-09 | 1956-06-14 | Siemens Ag | Procédé pour la préparation d'un corps cristallin, en particulier d'un corps semiconducteur |
| GB784617A (en) * | 1954-03-02 | 1957-10-09 | Siemens Ag | Improvements in or relating to processes and apparatus for drawing fused bodies |
| US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB755422A (en) * | 1953-01-19 | 1956-08-22 | Telefunken Gmbh | An improved method for the production of single crystals of semi-conductor materials |
| US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
-
0
- NL NL237834D patent/NL237834A/xx unknown
-
1958
- 1958-04-09 US US727441A patent/US2977258A/en not_active Expired - Lifetime
-
1959
- 1959-02-23 FR FR787491A patent/FR1220382A/fr not_active Expired
- 1959-03-17 BE BE576786A patent/BE576786A/fr unknown
- 1959-04-09 GB GB12001/59A patent/GB908951A/en not_active Expired
- 1959-04-09 DE DEP22565A patent/DE1132097B/de active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB784617A (en) * | 1954-03-02 | 1957-10-09 | Siemens Ag | Improvements in or relating to processes and apparatus for drawing fused bodies |
| FR1119039A (fr) * | 1954-03-09 | 1956-06-14 | Siemens Ag | Procédé pour la préparation d'un corps cristallin, en particulier d'un corps semiconducteur |
| US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1294939B (de) * | 1962-12-21 | 1969-05-14 | Siemens Ag | Verfahren und Vorrichtung zur Herstellung von aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze |
| DE1256626B (de) * | 1963-03-13 | 1967-12-21 | Siemens Ag | Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1220382A (fr) | 1960-05-24 |
| NL237834A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| BE576786A (fr) | 1959-07-16 |
| GB908951A (en) | 1962-10-24 |
| US2977258A (en) | 1961-03-28 |
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