DE112022005871T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number
DE112022005871T5
DE112022005871T5 DE112022005871.4T DE112022005871T DE112022005871T5 DE 112022005871 T5 DE112022005871 T5 DE 112022005871T5 DE 112022005871 T DE112022005871 T DE 112022005871T DE 112022005871 T5 DE112022005871 T5 DE 112022005871T5
Authority
DE
Germany
Prior art keywords
region
field plate
gate
plate electrode
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022005871.4T
Other languages
German (de)
English (en)
Inventor
Junya FUKUNISHI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022005871T5 publication Critical patent/DE112022005871T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112022005871.4T 2022-01-11 2022-10-27 Halbleitervorrichtung Pending DE112022005871T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-002323 2022-01-11
JP2022002323 2022-01-11
PCT/JP2022/040078 WO2023135896A1 (ja) 2022-01-11 2022-10-27 半導体装置

Publications (1)

Publication Number Publication Date
DE112022005871T5 true DE112022005871T5 (de) 2024-10-02

Family

ID=87278767

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022005871.4T Pending DE112022005871T5 (de) 2022-01-11 2022-10-27 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US20240355889A1 (https=)
JP (1) JPWO2023135896A1 (https=)
CN (1) CN118541809A (https=)
DE (1) DE112022005871T5 (https=)
WO (1) WO2023135896A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018129378A (ja) 2017-02-07 2018-08-16 ローム株式会社 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950699B2 (en) * 2019-08-05 2021-03-16 Vishay-Siliconix, LLC Termination for vertical trench shielded devices
JP7461218B2 (ja) * 2020-05-22 2024-04-03 ローム株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018129378A (ja) 2017-02-07 2018-08-16 ローム株式会社 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物

Also Published As

Publication number Publication date
US20240355889A1 (en) 2024-10-24
CN118541809A (zh) 2024-08-23
JPWO2023135896A1 (https=) 2023-07-20
WO2023135896A1 (ja) 2023-07-20

Similar Documents

Publication Publication Date Title
DE102007017002B4 (de) SiC-Halbleiteranordnung und Verfahren zum Herstellen derselben
DE69225552T2 (de) Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung
DE69621200T2 (de) Durchgriff-feldeffekttransistor
DE69525592T2 (de) Graben-dmos-transistor mit kanalblockierer in den zellgrabenecken
DE69315239T2 (de) VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik
DE102008052422B4 (de) Halbleitervorrichtung mit reduzierter Kapazität
DE102013114842B4 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE102009010174B4 (de) Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
DE112018000517B4 (de) Halbleitervorrichtung
DE112018006007B4 (de) Halbleitervorrichtung
DE102004055640B4 (de) LDMOS-Transistorvorrichtung, Integrierter Schaltkreis und Herstellungsverfahren hiervon
DE102010042929A1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE102010000113B4 (de) Halbleiterbauelement und Verfahren zur Herstellung
AT502860A2 (de) Leistungshalbleiterbauelement mit einem oberseitigen drain unter verwendung eines sinker-trenches
DE112016000210T5 (de) Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
EP0833386A1 (de) Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement
DE10350684A1 (de) Leistungstransistoranordnung und Verfahren zu deren Herstellung
DE102020116653A1 (de) Siliziumcarbid-halbleiterbauelement
DE112022000700T5 (de) Halbleiterbauteil
DE102015105679B4 (de) Halbleitervorrichtung, integrierte schaltung und verfahren zum herstellen der halbleitervorrichtung
DE112023001369T5 (de) Halbleiterbauteil
DE102021113288A1 (de) Leistungshalbleitervorrichtung und verfahren zu dessen herstellung
DE102014013947A1 (de) Halbleiterbauelement
DE10129289A1 (de) Halbleitervorrichtung mit einer Diode für eine Eingangschutzschaltung einer MOS-Vorrichtung und Verfahren zu deren Herstellung
DE102017110442A1 (de) Finfet-Vorrichtung mit epitaktischen Strukturen, die die Rippen umschliessen, und ihr Herstellungsverfahren

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029780000

Ipc: H10D0030600000