DE112022005863T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112022005863T5
DE112022005863T5 DE112022005863.3T DE112022005863T DE112022005863T5 DE 112022005863 T5 DE112022005863 T5 DE 112022005863T5 DE 112022005863 T DE112022005863 T DE 112022005863T DE 112022005863 T5 DE112022005863 T5 DE 112022005863T5
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DE
Germany
Prior art keywords
silicon carbide
region
semiconductor device
layer
junction diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022005863.3T
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German (de)
English (en)
Inventor
Akira Nakajima
Shinsuke Harada
Kazutoshi Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
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Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of DE112022005863T5 publication Critical patent/DE112022005863T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

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  • Junction Field-Effect Transistors (AREA)
DE112022005863.3T 2021-12-09 2022-11-22 Halbleitervorrichtung Pending DE112022005863T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021199975 2021-12-09
JP2021-199975 2021-12-09
PCT/JP2022/043169 WO2023106087A1 (ja) 2021-12-09 2022-11-22 半導体装置

Publications (1)

Publication Number Publication Date
DE112022005863T5 true DE112022005863T5 (de) 2024-09-26

Family

ID=86730322

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022005863.3T Pending DE112022005863T5 (de) 2021-12-09 2022-11-22 Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US20240332281A1 (https=)
JP (1) JP7795215B2 (https=)
CN (1) CN118369771A (https=)
DE (1) DE112022005863T5 (https=)
TW (1) TW202412116A (https=)
WO (1) WO2023106087A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121531774B (zh) * 2026-01-15 2026-04-28 杭州谱析光晶半导体科技有限公司 一种碳化硅-氮化镓异构集成高压功率器件结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007226475A (ja) 2006-02-22 2007-09-06 Fuji Electric Retail Systems Co Ltd 硬貨識別装置、硬貨識別方法および硬貨識別プログラム
JP2009004398A (ja) 2007-06-19 2009-01-08 Renesas Technology Corp 半導体装置およびこれを用いた電力変換装置
JP2010010262A (ja) 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd 半導体装置
JP2010267958A (ja) 2009-04-21 2010-11-25 Infineon Technologies Austria Ag 横型ｈｅｍｔおよび横型ｈｅｍｔの製造方法
JP2019004084A (ja) 2017-06-16 2019-01-10 株式会社東芝 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5126733B2 (ja) 2006-09-29 2013-01-23 独立行政法人産業技術総合研究所 電界効果トランジスタ及びその製造方法
JP5470705B2 (ja) 2007-12-28 2014-04-16 サンケン電気株式会社 半導体装置及びその製造方法
JP5524462B2 (ja) 2008-08-06 2014-06-18 シャープ株式会社 半導体装置
JP2014036115A (ja) 2012-08-08 2014-02-24 Renesas Electronics Corp 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007226475A (ja) 2006-02-22 2007-09-06 Fuji Electric Retail Systems Co Ltd 硬貨識別装置、硬貨識別方法および硬貨識別プログラム
JP2009004398A (ja) 2007-06-19 2009-01-08 Renesas Technology Corp 半導体装置およびこれを用いた電力変換装置
JP2010010262A (ja) 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd 半導体装置
JP2010267958A (ja) 2009-04-21 2010-11-25 Infineon Technologies Austria Ag 横型ｈｅｍｔおよび横型ｈｅｍｔの製造方法
JP2019004084A (ja) 2017-06-16 2019-01-10 株式会社東芝 半導体装置

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
E. A. Jones et al., IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 4, NO. 3, SEPTEMBER 2016, Seiten 707-719 Nichtpatentdokument 3: W. Saito et al., IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 1, JANUARY 2005, Seiten 106-111
M. Leszczynski et al., ECS Transactions, 50 (3), (2012), Seiten 163-171
O. Ambacher et al., Journal of Applied Physics, 85 (6), (1999), Seiten 3222-3233
S. Karmalkar et al., Solid State Electronics 45, (2001), Seiten 1645-1652
T. Deguchi et al., ELECTRONICS LETTERS Vol. 48 No. 2, (2012), Seiten 109-110
W. Saito et al., IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 8, AUGUST 2007, Seiten 1825-1830

Also Published As

Publication number Publication date
US20240332281A1 (en) 2024-10-03
TW202412116A (zh) 2024-03-16
WO2023106087A1 (ja) 2023-06-15
JP7795215B2 (ja) 2026-01-07
JPWO2023106087A1 (https=) 2023-06-15
CN118369771A (zh) 2024-07-19

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