DE112022004888T5 - Siliziumkarbid-Halbleitervorrichtung - Google Patents

Siliziumkarbid-Halbleitervorrichtung Download PDF

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Publication number
DE112022004888T5
DE112022004888T5 DE112022004888.3T DE112022004888T DE112022004888T5 DE 112022004888 T5 DE112022004888 T5 DE 112022004888T5 DE 112022004888 T DE112022004888 T DE 112022004888T DE 112022004888 T5 DE112022004888 T5 DE 112022004888T5
Authority
DE
Germany
Prior art keywords
silicon carbide
edge
region
pad
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022004888.3T
Other languages
German (de)
English (en)
Inventor
Kosuke Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd Tama-Shi Jp
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112022004888T5 publication Critical patent/DE112022004888T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112022004888.3T 2021-10-13 2022-06-23 Siliziumkarbid-Halbleitervorrichtung Pending DE112022004888T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-168094 2021-10-13
JP2021168094 2021-10-13
PCT/JP2022/025185 WO2023062883A1 (ja) 2021-10-13 2022-06-23 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
DE112022004888T5 true DE112022004888T5 (de) 2024-07-25

Family

ID=85988271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022004888.3T Pending DE112022004888T5 (de) 2021-10-13 2022-06-23 Siliziumkarbid-Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US20240313058A1 (https=)
JP (1) JPWO2023062883A1 (https=)
CN (1) CN117882200A (https=)
DE (1) DE112022004888T5 (https=)
WO (1) WO2023062883A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021168094A (ja) 2020-04-13 2021-10-21 株式会社イーアイアイ 学習データ作成システム、学習データ作成方法、および学習済みモデル

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
JP2011176206A (ja) * 2010-02-25 2011-09-08 Renesas Electronics Corp 半導体装置およびその製造方法
JP6561759B2 (ja) * 2015-10-19 2019-08-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6846687B2 (ja) * 2017-09-12 2021-03-24 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
JP6896821B2 (ja) * 2018-01-09 2021-06-30 ローム株式会社 半導体装置
JP6930495B2 (ja) * 2018-05-18 2021-09-01 株式会社デンソー 半導体装置
JP7167639B2 (ja) * 2018-11-07 2022-11-09 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2020208706A1 (ja) * 2019-04-09 2020-10-15 三菱電機株式会社 半導体装置および半導体モジュール
JP2021093496A (ja) * 2019-12-12 2021-06-17 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021168094A (ja) 2020-04-13 2021-10-21 株式会社イーアイアイ 学習データ作成システム、学習データ作成方法、および学習済みモデル

Also Published As

Publication number Publication date
CN117882200A (zh) 2024-04-12
JPWO2023062883A1 (https=) 2023-04-20
WO2023062883A1 (ja) 2023-04-20
US20240313058A1 (en) 2024-09-19

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Legal Events

Date Code Title Description
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029417000

Ipc: H10D0064230000

R081 Change of applicant/patentee

Owner name: MITSUMI ELECTRIC CO., LTD., TAMA-SHI, JP

Free format text: FORMER OWNER: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP