CN117882200A - 碳化硅半导体器件 - Google Patents
碳化硅半导体器件 Download PDFInfo
- Publication number
- CN117882200A CN117882200A CN202280058963.XA CN202280058963A CN117882200A CN 117882200 A CN117882200 A CN 117882200A CN 202280058963 A CN202280058963 A CN 202280058963A CN 117882200 A CN117882200 A CN 117882200A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- edge
- region
- film
- passivation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-168094 | 2021-10-13 | ||
| JP2021168094 | 2021-10-13 | ||
| PCT/JP2022/025185 WO2023062883A1 (ja) | 2021-10-13 | 2022-06-23 | 炭化珪素半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117882200A true CN117882200A (zh) | 2024-04-12 |
Family
ID=85988271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280058963.XA Pending CN117882200A (zh) | 2021-10-13 | 2022-06-23 | 碳化硅半导体器件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240313058A1 (https=) |
| JP (1) | JPWO2023062883A1 (https=) |
| CN (1) | CN117882200A (https=) |
| DE (1) | DE112022004888T5 (https=) |
| WO (1) | WO2023062883A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
| JP2011176206A (ja) * | 2010-02-25 | 2011-09-08 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP6561759B2 (ja) * | 2015-10-19 | 2019-08-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6846687B2 (ja) * | 2017-09-12 | 2021-03-24 | パナソニックＩｐマネジメント株式会社 | 半導体装置およびその製造方法 |
| JP6896821B2 (ja) * | 2018-01-09 | 2021-06-30 | ローム株式会社 | 半導体装置 |
| JP6930495B2 (ja) * | 2018-05-18 | 2021-09-01 | 株式会社デンソー | 半導体装置 |
| JP7167639B2 (ja) * | 2018-11-07 | 2022-11-09 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2020208706A1 (ja) * | 2019-04-09 | 2020-10-15 | 三菱電機株式会社 | 半導体装置および半導体モジュール |
| JP2021093496A (ja) * | 2019-12-12 | 2021-06-17 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
| JP7473886B2 (ja) | 2020-04-13 | 2024-04-24 | 株式会社イーアイアイ | 学習データ作成システム、学習データ作成方法、および学習済みモデル |
-
2022
- 2022-06-23 US US18/681,214 patent/US20240313058A1/en active Pending
- 2022-06-23 WO PCT/JP2022/025185 patent/WO2023062883A1/ja not_active Ceased
- 2022-06-23 DE DE112022004888.3T patent/DE112022004888T5/de active Pending
- 2022-06-23 JP JP2023554257A patent/JPWO2023062883A1/ja active Pending
- 2022-06-23 CN CN202280058963.XA patent/CN117882200A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE112022004888T5 (de) | 2024-07-25 |
| JPWO2023062883A1 (https=) | 2023-04-20 |
| WO2023062883A1 (ja) | 2023-04-20 |
| US20240313058A1 (en) | 2024-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |