DE112021006557B4 - Halbleitervorrichtungen - Google Patents

Halbleitervorrichtungen Download PDF

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Publication number
DE112021006557B4
DE112021006557B4 DE112021006557.2T DE112021006557T DE112021006557B4 DE 112021006557 B4 DE112021006557 B4 DE 112021006557B4 DE 112021006557 T DE112021006557 T DE 112021006557T DE 112021006557 B4 DE112021006557 B4 DE 112021006557B4
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Germany
Prior art keywords
layer
trench
trench structure
region
semiconductor device
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DE112021006557.2T
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German (de)
English (en)
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DE112021006557T5 (de
Inventor
Keiji Wada
Daisuke Ichikawa
Mitsuhide Kori
Naoki Izumi
Bungo Tanaka
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

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DE112021006557.2T 2021-01-15 2021-11-30 Halbleitervorrichtungen Active DE112021006557B4 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2021005308 2021-01-15
JP2021-005308 2021-01-15
JP2021-005309 2021-01-15
JP2021005307 2021-01-15
JP2021005309 2021-01-15
JP2021-005310 2021-01-15
JP2021005310 2021-01-15
JP2021-005307 2021-01-15
PCT/JP2021/043822 WO2022153693A1 (ja) 2021-01-15 2021-11-30 半導体装置

Publications (2)

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DE112021006557T5 DE112021006557T5 (de) 2023-10-05
DE112021006557B4 true DE112021006557B4 (de) 2025-02-20

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DE112021006557.2T Active DE112021006557B4 (de) 2021-01-15 2021-11-30 Halbleitervorrichtungen

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US (1) US20230352545A1 (https=)
JP (1) JPWO2022153693A1 (https=)
DE (1) DE112021006557B4 (https=)
WO (1) WO2022153693A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021006557B4 (de) 2021-01-15 2025-02-20 Rohm Co., Ltd. Halbleitervorrichtungen
JP7748832B2 (ja) * 2021-08-26 2025-10-03 ローム株式会社 半導体装置
US20230411302A1 (en) * 2022-06-15 2023-12-21 Texas Instruments Incorporated Deep trench bypass capacitor for electromagnetic interference noise reduction

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015122543A (ja) 2015-03-30 2015-07-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20160163583A1 (en) 2014-12-04 2016-06-09 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
US20180053765A1 (en) 2016-08-16 2018-02-22 Texas Instruments Incorporated Dual deep trenches for high voltage isolation
JP2021005308A (ja) 2019-06-27 2021-01-14 Ｚｅｒｏｂｉｌｌｂａｎｋ Ｊａｐａｎ株式会社 移動体管理システム及び移動体管理方法
JP2021005309A (ja) 2019-06-27 2021-01-14 株式会社トレスバイオ研究所 生産者選択装置及び生産者選択方法
WO2022153693A1 (ja) 2021-01-15 2022-07-21 ローム株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290235A (ja) * 1988-05-17 1989-11-22 Iwatsu Electric Co Ltd 半導体集積回路装置
JP2715581B2 (ja) * 1989-07-31 1998-02-18 松下電器産業株式会社 半導体装置及びその製造方法
JPH04225260A (ja) * 1990-12-26 1992-08-14 Nec Corp 半導体装置およびその製造方法
JP6037499B2 (ja) * 2011-06-08 2016-12-07 ローム株式会社 半導体装置およびその製造方法
JP7299769B2 (ja) * 2019-06-24 2023-06-28 ローム株式会社 半導体装置
JP6931676B2 (ja) 2019-06-27 2021-09-08 Ａｊｓ株式会社 人事評価支援装置、人事評価支援方法、及び人事評価支援プログラム
JP7358800B2 (ja) 2019-06-27 2023-10-11 京セラドキュメントソリューションズ株式会社 電子機器及びその制御プログラム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160163583A1 (en) 2014-12-04 2016-06-09 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
JP2015122543A (ja) 2015-03-30 2015-07-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20180053765A1 (en) 2016-08-16 2018-02-22 Texas Instruments Incorporated Dual deep trenches for high voltage isolation
JP2021005308A (ja) 2019-06-27 2021-01-14 Ｚｅｒｏｂｉｌｌｂａｎｋ Ｊａｐａｎ株式会社 移動体管理システム及び移動体管理方法
JP2021005309A (ja) 2019-06-27 2021-01-14 株式会社トレスバイオ研究所 生産者選択装置及び生産者選択方法
WO2022153693A1 (ja) 2021-01-15 2022-07-21 ローム株式会社 半導体装置

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US20230352545A1 (en) 2023-11-02
WO2022153693A1 (ja) 2022-07-21
DE112021006557T5 (de) 2023-10-05
JPWO2022153693A1 (https=) 2022-07-21

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