JPWO2022153693A1 - - Google Patents

Info

Publication number
JPWO2022153693A1
JPWO2022153693A1 JP2022575113A JP2022575113A JPWO2022153693A1 JP WO2022153693 A1 JPWO2022153693 A1 JP WO2022153693A1 JP 2022575113 A JP2022575113 A JP 2022575113A JP 2022575113 A JP2022575113 A JP 2022575113A JP WO2022153693 A1 JPWO2022153693 A1 JP WO2022153693A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022575113A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022153693A1 publication Critical patent/JPWO2022153693A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
JP2022575113A 2021-01-15 2021-11-30 Pending JPWO2022153693A1 (https=)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2021005308 2021-01-15
JP2021005307 2021-01-15
JP2021005309 2021-01-15
JP2021005310 2021-01-15
PCT/JP2021/043822 WO2022153693A1 (ja) 2021-01-15 2021-11-30 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2022153693A1 true JPWO2022153693A1 (https=) 2022-07-21

Family

ID=82447132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022575113A Pending JPWO2022153693A1 (https=) 2021-01-15 2021-11-30

Country Status (4)

Country Link
US (1) US20230352545A1 (https=)
JP (1) JPWO2022153693A1 (https=)
DE (1) DE112021006557B4 (https=)
WO (1) WO2022153693A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021006557B4 (de) 2021-01-15 2025-02-20 Rohm Co., Ltd. Halbleitervorrichtungen
JP7748832B2 (ja) * 2021-08-26 2025-10-03 ローム株式会社 半導体装置
US20230411302A1 (en) * 2022-06-15 2023-12-21 Texas Instruments Incorporated Deep trench bypass capacitor for electromagnetic interference noise reduction

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290235A (ja) * 1988-05-17 1989-11-22 Iwatsu Electric Co Ltd 半導体集積回路装置
JPH0362946A (ja) * 1989-07-31 1991-03-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH04225260A (ja) * 1990-12-26 1992-08-14 Nec Corp 半導体装置およびその製造方法
JP2013033931A (ja) * 2011-06-08 2013-02-14 Rohm Co Ltd 半導体装置およびその製造方法
US20160163583A1 (en) * 2014-12-04 2016-06-09 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
JP2019526932A (ja) * 2016-08-16 2019-09-19 日本テキサス・インスツルメンツ合同会社 高電圧隔離のためのデュアルディープトレンチ
JP2021002623A (ja) * 2019-06-24 2021-01-07 ローム株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6029704B2 (ja) 2015-03-30 2016-11-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2021005308A (ja) 2019-06-27 2021-01-14 Ｚｅｒｏｂｉｌｌｂａｎｋ Ｊａｐａｎ株式会社 移動体管理システム及び移動体管理方法
JP6931676B2 (ja) 2019-06-27 2021-09-08 Ａｊｓ株式会社 人事評価支援装置、人事評価支援方法、及び人事評価支援プログラム
JP7323163B2 (ja) 2019-06-27 2023-08-08 株式会社トレスバイオ研究所 生産者選択装置及び生産者選択方法
JP7358800B2 (ja) 2019-06-27 2023-10-11 京セラドキュメントソリューションズ株式会社 電子機器及びその制御プログラム
DE112021006557B4 (de) 2021-01-15 2025-02-20 Rohm Co., Ltd. Halbleitervorrichtungen

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290235A (ja) * 1988-05-17 1989-11-22 Iwatsu Electric Co Ltd 半導体集積回路装置
JPH0362946A (ja) * 1989-07-31 1991-03-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH04225260A (ja) * 1990-12-26 1992-08-14 Nec Corp 半導体装置およびその製造方法
JP2013033931A (ja) * 2011-06-08 2013-02-14 Rohm Co Ltd 半導体装置およびその製造方法
US20160163583A1 (en) * 2014-12-04 2016-06-09 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
JP2019526932A (ja) * 2016-08-16 2019-09-19 日本テキサス・インスツルメンツ合同会社 高電圧隔離のためのデュアルディープトレンチ
JP2021002623A (ja) * 2019-06-24 2021-01-07 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
DE112021006557B4 (de) 2025-02-20
US20230352545A1 (en) 2023-11-02
WO2022153693A1 (ja) 2022-07-21
DE112021006557T5 (de) 2023-10-05

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240925

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260330