DE112020002625T5 - Halbleitervorrichtung und Herstellungsverfahren dafür - Google Patents

Halbleitervorrichtung und Herstellungsverfahren dafür Download PDF

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Publication number
DE112020002625T5
DE112020002625T5 DE112020002625.6T DE112020002625T DE112020002625T5 DE 112020002625 T5 DE112020002625 T5 DE 112020002625T5 DE 112020002625 T DE112020002625 T DE 112020002625T DE 112020002625 T5 DE112020002625 T5 DE 112020002625T5
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Germany
Prior art keywords
insulating layer
conductor
semiconductor device
bonding
semiconductor
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DE112020002625.6T
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German (de)
English (en)
Inventor
Takashi Hirao
Nobutake Tsuyuno
Haruka Shimizu
Akira Matsushita
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Hitachi Astemo Ltd
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Hitachi Astemo Ltd
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Publication of DE112020002625T5 publication Critical patent/DE112020002625T5/de
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