DE112018002939A5 - Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser - Google Patents

Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser Download PDF

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Publication number
DE112018002939A5
DE112018002939A5 DE112018002939.5T DE112018002939T DE112018002939A5 DE 112018002939 A5 DE112018002939 A5 DE 112018002939A5 DE 112018002939 T DE112018002939 T DE 112018002939T DE 112018002939 A5 DE112018002939 A5 DE 112018002939A5
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DE
Germany
Prior art keywords
semiconductor laser
operating method
edge emitting
emitting semiconductor
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112018002939.5T
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English (en)
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DE112018002939B4 (de
DE112018002939B9 (de
Inventor
Peter Fuchs
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Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication of DE112018002939B4 publication Critical patent/DE112018002939B4/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE112018002939.5T 2017-06-08 2018-06-05 Kantenemittierender Halbleiterlaser mit einer Schutzschichtenfolge Active DE112018002939B9 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017112610.4A DE102017112610A1 (de) 2017-06-08 2017-06-08 Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
DE102017112610.4 2017-06-08
PCT/EP2018/064739 WO2018224483A1 (de) 2017-06-08 2018-06-05 Kantenemittierender halbleiterlaser und betriebsverfahren für einen solchen halbleiterlaser

Publications (3)

Publication Number Publication Date
DE112018002939A5 true DE112018002939A5 (de) 2020-02-27
DE112018002939B4 DE112018002939B4 (de) 2022-03-17
DE112018002939B9 DE112018002939B9 (de) 2022-05-12

Family

ID=62563138

Family Applications (3)

Application Number Title Priority Date Filing Date
DE102017112610.4A Withdrawn DE102017112610A1 (de) 2017-06-08 2017-06-08 Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
DE112018008243.1T Active DE112018008243B4 (de) 2017-06-08 2018-06-05 Kantenemittierender Halbleiterlaser mit einer Schutzschichtenfolge
DE112018002939.5T Active DE112018002939B9 (de) 2017-06-08 2018-06-05 Kantenemittierender Halbleiterlaser mit einer Schutzschichtenfolge

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE102017112610.4A Withdrawn DE102017112610A1 (de) 2017-06-08 2017-06-08 Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
DE112018008243.1T Active DE112018008243B4 (de) 2017-06-08 2018-06-05 Kantenemittierender Halbleiterlaser mit einer Schutzschichtenfolge

Country Status (5)

Country Link
US (1) US11043791B2 (de)
JP (2) JP7057380B2 (de)
CN (2) CN113555768B (de)
DE (3) DE102017112610A1 (de)
WO (1) WO2018224483A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021187081A1 (de) * 2020-03-17 2021-09-23
CN115461947A (zh) * 2020-04-24 2022-12-09 Ams-欧司朗国际有限公司 半导体激光器和包括半导体激光器的激光系统
TWI810873B (zh) * 2022-03-29 2023-08-01 華信光電科技股份有限公司 具有高導熱低反射前鏡面之邊射型半導體雷射

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JPH0715081A (ja) * 1993-06-23 1995-01-17 Hitachi Ltd 半導体レーザ及びその製造方法
US5665637A (en) * 1995-11-17 1997-09-09 Lucent Technologies Inc. Passivated faceted article comprising a semiconductor laser
US5799028A (en) * 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface
US6590920B1 (en) * 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
JP3814432B2 (ja) * 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
JP2001156383A (ja) * 1999-09-16 2001-06-08 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP3641403B2 (ja) * 1999-12-15 2005-04-20 シャープ株式会社 半導体レーザ素子及びその製造方法
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JP2001267677A (ja) 2000-03-17 2001-09-28 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JP4832657B2 (ja) * 2001-04-06 2011-12-07 ローム株式会社 半導体レーザおよびその製法
KR100453962B1 (ko) * 2001-12-10 2004-10-20 엘지전자 주식회사 반도체 레이저 소자 및 그의 벽개면에 윈도우층을형성하는 방법
JP4236840B2 (ja) * 2001-12-25 2009-03-11 富士フイルム株式会社 半導体レーザ素子
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Also Published As

Publication number Publication date
JP2022091987A (ja) 2022-06-21
US11043791B2 (en) 2021-06-22
US20200203921A1 (en) 2020-06-25
DE112018002939B4 (de) 2022-03-17
CN110731036B (zh) 2021-07-20
JP2020522891A (ja) 2020-07-30
CN113555768A (zh) 2021-10-26
CN113555768B (zh) 2024-06-07
JP7329095B2 (ja) 2023-08-17
DE112018002939B9 (de) 2022-05-12
WO2018224483A1 (de) 2018-12-13
CN110731036A (zh) 2020-01-24
JP7057380B2 (ja) 2022-04-19
DE112018008243B4 (de) 2023-11-30
DE102017112610A1 (de) 2018-12-13

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