ITUB20160994A1 - Diodo laser a semiconduttore e procedimento per la sua realizzazione - Google Patents

Diodo laser a semiconduttore e procedimento per la sua realizzazione

Info

Publication number
ITUB20160994A1
ITUB20160994A1 ITUB2016A000994A ITUB20160994A ITUB20160994A1 IT UB20160994 A1 ITUB20160994 A1 IT UB20160994A1 IT UB2016A000994 A ITUB2016A000994 A IT UB2016A000994A IT UB20160994 A ITUB20160994 A IT UB20160994A IT UB20160994 A1 ITUB20160994 A1 IT UB20160994A1
Authority
IT
Italy
Prior art keywords
realization
procedure
semiconductor diode
laser semiconductor
laser
Prior art date
Application number
ITUB2016A000994A
Other languages
English (en)
Inventor
Roberto Paoletti
Claudio Coriasso
Paolo Calefati
Original Assignee
Prima Electro S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prima Electro S P A filed Critical Prima Electro S P A
Priority to ITUB2016A000994A priority Critical patent/ITUB20160994A1/it
Priority to EP17157316.5A priority patent/EP3211736B1/en
Priority to US15/439,713 priority patent/US10305256B2/en
Priority to CN201710223119.9A priority patent/CN107104362B/zh
Publication of ITUB20160994A1 publication Critical patent/ITUB20160994A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
ITUB2016A000994A 2016-02-23 2016-02-23 Diodo laser a semiconduttore e procedimento per la sua realizzazione ITUB20160994A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITUB2016A000994A ITUB20160994A1 (it) 2016-02-23 2016-02-23 Diodo laser a semiconduttore e procedimento per la sua realizzazione
EP17157316.5A EP3211736B1 (en) 2016-02-23 2017-02-22 Semiconductor laser diode and method of manufacture thereof
US15/439,713 US10305256B2 (en) 2016-02-23 2017-02-22 Semiconductor laser diode and method of manufacture thereof
CN201710223119.9A CN107104362B (zh) 2016-02-23 2017-02-23 半导体激光二极管及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2016A000994A ITUB20160994A1 (it) 2016-02-23 2016-02-23 Diodo laser a semiconduttore e procedimento per la sua realizzazione

Publications (1)

Publication Number Publication Date
ITUB20160994A1 true ITUB20160994A1 (it) 2017-08-23

Family

ID=56027051

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2016A000994A ITUB20160994A1 (it) 2016-02-23 2016-02-23 Diodo laser a semiconduttore e procedimento per la sua realizzazione

Country Status (4)

Country Link
US (1) US10305256B2 (it)
EP (1) EP3211736B1 (it)
CN (1) CN107104362B (it)
IT (1) ITUB20160994A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020093189A1 (zh) * 2018-11-05 2020-05-14 华为技术有限公司 一种抗反射激光器
US11557874B2 (en) 2021-05-18 2023-01-17 Trumpf Photonics, Inc. Double-sided cooling of laser diodes
US11876343B2 (en) 2021-05-18 2024-01-16 Trumpf Photonics, Inc. Laser diode packaging platforms

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0966077A2 (en) * 1998-06-19 1999-12-22 Sony Corporation Semiconductor light emitting device and its manufacturing method
WO2002041456A2 (en) * 2000-11-15 2002-05-23 University Of Bristol Laser devices
US20100291717A1 (en) * 2007-06-22 2010-11-18 Thales Optimized process for fabricating light-emitting devices using artificial materials
US20110032967A1 (en) * 2003-09-03 2011-02-10 Behfar Alex A Single longitudinal mode laser diode

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6636547B2 (en) * 2000-04-28 2003-10-21 Photodigm, Inc. Multiple grating-outcoupled surface-emitting lasers
US6963597B2 (en) * 2000-04-28 2005-11-08 Photodigm, Inc. Grating-outcoupled surface-emitting lasers
JP2001320124A (ja) * 2000-05-09 2001-11-16 Nec Corp 変調器集積化光源及び光通信用モジュール
US20030063645A1 (en) * 2001-09-28 2003-04-03 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for suppressing fabry perot oscillations
JP2003152274A (ja) * 2001-11-13 2003-05-23 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器
JP3886972B2 (ja) * 2004-02-18 2007-02-28 アンリツ株式会社 半導体レーザ
JP4652061B2 (ja) * 2005-01-17 2011-03-16 富士通株式会社 半導体レーザ
CN101079532A (zh) * 2006-05-25 2007-11-28 中国科学院半导体研究所 波长为852nm的分布反馈激光器的结构和制作方法
JP2008060472A (ja) * 2006-09-01 2008-03-13 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
US20100290489A1 (en) * 2009-05-15 2010-11-18 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method
EP2337168B1 (de) * 2009-12-17 2019-12-25 Forschungsverbund Berlin e.V. Oberflächenemittierende Laserstrahlquelle mit zwei Kavitäten
US8737446B2 (en) * 2010-03-25 2014-05-27 Sumitomo Electric Industries, Ltd. Semiconductor laser
CN104412148B (zh) * 2012-05-17 2017-10-10 菲尼萨公司 用于无源光网络(pon)应用的直接调制激光器
CN103346477A (zh) * 2013-06-28 2013-10-09 中国科学院半导体研究所 一种侧向耦合平面波导光栅外腔激光器
US9077144B2 (en) * 2013-09-30 2015-07-07 Jds Uniphase Corporation MOPA laser source with wavelength control
CN103715607B (zh) * 2013-12-19 2016-06-01 中国科学院半导体研究所 一种可调谐衬底发射量子级联激光器阵列器件
US9209605B1 (en) 2015-01-23 2015-12-08 Lumentum Operations Llc Laser diode subassembly and method of generating light

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0966077A2 (en) * 1998-06-19 1999-12-22 Sony Corporation Semiconductor light emitting device and its manufacturing method
WO2002041456A2 (en) * 2000-11-15 2002-05-23 University Of Bristol Laser devices
US20110032967A1 (en) * 2003-09-03 2011-02-10 Behfar Alex A Single longitudinal mode laser diode
US20100291717A1 (en) * 2007-06-22 2010-11-18 Thales Optimized process for fabricating light-emitting devices using artificial materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MARINELLI C ET AL: "Threshold current reduction in InGaN MQW laser diode with lambda/4 air/semiconductor Bragg reflectors", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 20, 28 September 2000 (2000-09-28), pages 1706 - 1707, XP006015781, ISSN: 0013-5194, DOI: 10.1049/EL:20001230 *

Also Published As

Publication number Publication date
US20170244221A1 (en) 2017-08-24
US10305256B2 (en) 2019-05-28
EP3211736A1 (en) 2017-08-30
CN107104362B (zh) 2021-01-12
CN107104362A (zh) 2017-08-29
EP3211736B1 (en) 2022-05-11

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