DE112017002961B4 - Leistungs-halbleitereinheit - Google Patents

Leistungs-halbleitereinheit Download PDF

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Publication number
DE112017002961B4
DE112017002961B4 DE112017002961.9T DE112017002961T DE112017002961B4 DE 112017002961 B4 DE112017002961 B4 DE 112017002961B4 DE 112017002961 T DE112017002961 T DE 112017002961T DE 112017002961 B4 DE112017002961 B4 DE 112017002961B4
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DE
Germany
Prior art keywords
wire
solder layer
power semiconductor
layer
bump
Prior art date
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Application number
DE112017002961.9T
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German (de)
English (en)
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DE112017002961T5 (de
Inventor
Tatsunori YANAGIMOTO
Shinsuke Asada
Koichi TOKUBO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE112017002961T5 publication Critical patent/DE112017002961T5/de
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Publication of DE112017002961B4 publication Critical patent/DE112017002961B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07321—Aligning
    • H10W72/07327—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/655—Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
DE112017002961.9T 2016-06-14 2017-06-12 Leistungs-halbleitereinheit Active DE112017002961B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-118177 2016-06-14
JP2016118177 2016-06-14
PCT/JP2017/021649 WO2017217369A1 (ja) 2016-06-14 2017-06-12 電力用半導体装置

Publications (2)

Publication Number Publication Date
DE112017002961T5 DE112017002961T5 (de) 2019-02-28
DE112017002961B4 true DE112017002961B4 (de) 2022-06-09

Family

ID=60663186

Family Applications (2)

Application Number Title Priority Date Filing Date
DE112017002961.9T Active DE112017002961B4 (de) 2016-06-14 2017-06-12 Leistungs-halbleitereinheit
DE112017008386.9T Active DE112017008386B4 (de) 2016-06-14 2017-06-12 Leistungs-halbleitereinheit

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112017008386.9T Active DE112017008386B4 (de) 2016-06-14 2017-06-12 Leistungs-halbleitereinheit

Country Status (4)

Country Link
JP (2) JP6487122B2 (https=)
CN (2) CN109314063B (https=)
DE (2) DE112017002961B4 (https=)
WO (1) WO2017217369A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6487122B2 (ja) * 2016-06-14 2019-03-20 三菱電機株式会社 電力用半導体装置
JP2022031611A (ja) * 2018-11-09 2022-02-22 住友電気工業株式会社 半導体装置
EP3893272A4 (en) * 2018-12-04 2022-08-31 Kuraray Co., Ltd. HIGH VOLTAGE SWITCHBOARD AND HIGH VOLTAGE DEVICE WITH USE THEREOF
EP3675190B1 (en) 2018-12-25 2023-05-03 Nichia Corporation Method of manufacturing light source device and light source device
WO2020218595A1 (ja) * 2019-04-25 2020-10-29 京セラ株式会社 発光素子搭載用基板および発光装置
JP7282048B2 (ja) * 2020-02-12 2023-05-26 三菱電機株式会社 電力用半導体装置およびその製造方法
KR102819516B1 (ko) * 2020-04-20 2025-06-11 현대자동차주식회사 솔더링 구조, 이를 갖는 파워 모듈 및 파워 모듈의 제조 방법
JP7489879B2 (ja) * 2020-09-25 2024-05-24 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
DE112020007729T5 (de) 2020-10-19 2023-08-10 Mitsubishi Electric Corporation Halbleitervorrichtung
JPWO2022209609A1 (https=) * 2021-03-31 2022-10-06
JP7717007B2 (ja) * 2022-03-03 2025-08-01 三菱電機株式会社 半導体装置および電力変換装置
JP7630717B2 (ja) * 2022-04-08 2025-02-17 三菱電機株式会社 半導体装置及び半導体装置の製造方法
JP7748924B2 (ja) 2022-09-14 2025-10-03 株式会社東芝 半導体装置
JP2024118041A (ja) * 2023-02-20 2024-08-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN119768905A (zh) * 2023-03-24 2025-04-04 富士电机株式会社 半导体装置

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH11186331A (ja) 1997-12-19 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5542567B2 (ja) 2010-07-27 2014-07-09 三菱電機株式会社 半導体装置
US20150200181A1 (en) 2009-06-18 2015-07-16 Rohm Co., Ltd. Semiconductor device
US20160035691A1 (en) 2013-07-10 2016-02-04 Mitsubishi Electric Corporation Semiconductor device and method of fabricating same
US20160113107A1 (en) 2014-10-15 2016-04-21 Delta Electronics, Inc. Power module

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JP2000013029A (ja) * 1998-04-22 2000-01-14 Hitachi Cable Ltd 高密度配線基板、その製造方法、及びそれを用いた電子装置
JP3287328B2 (ja) * 1999-03-09 2002-06-04 日本電気株式会社 半導体装置及び半導体装置の製造方法
US6525423B2 (en) * 2001-06-19 2003-02-25 Cree Microwave, Inc. Semiconductor device package and method of die attach
JP3836010B2 (ja) * 2001-10-19 2006-10-18 三菱電機株式会社 半導体装置
JP3705779B2 (ja) * 2002-03-26 2005-10-12 株式会社東芝 パワーデバイスとその製造方法ならびに錫基はんだ材料
JP2005236019A (ja) * 2004-02-19 2005-09-02 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
JP2007142271A (ja) * 2005-11-21 2007-06-07 Tanaka Electronics Ind Co Ltd バンプ材料および接合構造
JP5187832B2 (ja) * 2008-03-11 2013-04-24 田中電子工業株式会社 半導体装置
JP2011071301A (ja) * 2009-09-25 2011-04-07 Honda Motor Co Ltd 金属ナノ粒子を用いた接合方法及び接合体
JP2012028433A (ja) * 2010-07-21 2012-02-09 Nec Network Products Ltd 電子部品の実装方法
JP2012069733A (ja) * 2010-09-24 2012-04-05 Hitachi High-Tech Instruments Co Ltd ダイボンダの治工具管理方法、および、ダイボンダ
US8587116B2 (en) * 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
JP2013004921A (ja) * 2011-06-21 2013-01-07 Shinko Electric Ind Co Ltd 突起電極の製造方法
TWI466253B (zh) * 2012-10-08 2014-12-21 財團法人工業技術研究院 雙相介金屬接點結構及其製作方法
JP2016026884A (ja) * 2014-07-02 2016-02-18 住友金属鉱山株式会社 中低温用のＢｉ−Ｓｎ−Ａｌ系はんだ合金及びはんだペースト
JP6487122B2 (ja) * 2016-06-14 2019-03-20 三菱電機株式会社 電力用半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186331A (ja) 1997-12-19 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20150200181A1 (en) 2009-06-18 2015-07-16 Rohm Co., Ltd. Semiconductor device
JP5542567B2 (ja) 2010-07-27 2014-07-09 三菱電機株式会社 半導体装置
US20160035691A1 (en) 2013-07-10 2016-02-04 Mitsubishi Electric Corporation Semiconductor device and method of fabricating same
US20160113107A1 (en) 2014-10-15 2016-04-21 Delta Electronics, Inc. Power module

Also Published As

Publication number Publication date
CN109314063A (zh) 2019-02-05
JP6983187B2 (ja) 2021-12-17
CN115274465A (zh) 2022-11-01
WO2017217369A1 (ja) 2017-12-21
JPWO2017217369A1 (ja) 2018-09-27
DE112017008386B4 (de) 2025-06-12
JP6487122B2 (ja) 2019-03-20
JP2019110317A (ja) 2019-07-04
DE112017002961T5 (de) 2019-02-28
CN109314063B (zh) 2022-08-16

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