DE112017002293B4 - System und Verfahren zur Kompensation von Fehlausrichtungen von Beleuchtungsstrahlung - Google Patents

System und Verfahren zur Kompensation von Fehlausrichtungen von Beleuchtungsstrahlung Download PDF

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Publication number
DE112017002293B4
DE112017002293B4 DE112017002293.2T DE112017002293T DE112017002293B4 DE 112017002293 B4 DE112017002293 B4 DE 112017002293B4 DE 112017002293 T DE112017002293 T DE 112017002293T DE 112017002293 B4 DE112017002293 B4 DE 112017002293B4
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corrected beam
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DE112017002293.2T
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German (de)
English (en)
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DE112017002293T5 (de
Inventor
Zhiwei Steve Xu
Yury Yuditsky
Frank Li
Timothy Swisher
Kwan Auyeung
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/108—Scanning systems having one or more prisms as scanning elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Slot Machines And Peripheral Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE112017002293.2T 2016-05-02 2017-04-28 System und Verfahren zur Kompensation von Fehlausrichtungen von Beleuchtungsstrahlung Active DE112017002293B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662330756P 2016-05-02 2016-05-02
US62/330,756 2016-05-02
US15/477,885 US10495579B2 (en) 2016-05-02 2017-04-03 System and method for compensation of illumination beam misalignment
US15/477,885 2017-04-03
PCT/US2017/030258 WO2017192403A1 (en) 2016-05-02 2017-04-28 System and method for compensation of illumination beam misalignment

Publications (2)

Publication Number Publication Date
DE112017002293T5 DE112017002293T5 (de) 2019-02-14
DE112017002293B4 true DE112017002293B4 (de) 2025-06-05

Family

ID=60203214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112017002293.2T Active DE112017002293B4 (de) 2016-05-02 2017-04-28 System und Verfahren zur Kompensation von Fehlausrichtungen von Beleuchtungsstrahlung

Country Status (9)

Country Link
US (1) US10495579B2 (enExample)
JP (1) JP6741787B2 (enExample)
KR (1) KR102190345B1 (enExample)
CN (1) CN109075099B (enExample)
DE (1) DE112017002293B4 (enExample)
IL (1) IL262231B (enExample)
SG (1) SG11201806925PA (enExample)
TW (1) TWI728104B (enExample)
WO (1) WO2017192403A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10365211B2 (en) * 2017-09-26 2019-07-30 Kla-Tencor Corporation Systems and methods for metrology beam stabilization
DE102020209268B3 (de) 2020-07-22 2021-10-14 Hochschule Emden/Leer Optisches System
CN117110311B (zh) * 2022-05-17 2025-09-12 深圳中科飞测科技股份有限公司 一种光学检测系统及图像动态对准方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060202115A1 (en) * 2005-03-10 2006-09-14 Hitachi Via Mechanics, Ltd. Apparatus and method for beam drift compensation
WO2010146799A1 (ja) * 2009-06-18 2010-12-23 株式会社日立ハイテクノロジーズ 欠陥検査装置および検査方法

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JPS60221720A (ja) * 1984-04-18 1985-11-06 Fuji Photo Film Co Ltd 光ビ−ム走査装置
US4696047A (en) 1985-02-28 1987-09-22 Texas Instruments Incorporated Apparatus for automatically inspecting electrical connecting pins
US6618421B2 (en) 1998-07-18 2003-09-09 Cymer, Inc. High repetition rate gas discharge laser with precise pulse timing control
JP2001334376A (ja) 2000-05-26 2001-12-04 Nec Toyama Ltd レーザ加工装置及びレーザ光スポット位置補正方法
JP2003179142A (ja) 2001-12-10 2003-06-27 Nec Microsystems Ltd ジッタ検査回路を搭載した半導体装置およびそのジッタ検査方法
US6831736B2 (en) 2002-10-07 2004-12-14 Applied Materials Israel, Ltd. Method of and apparatus for line alignment to compensate for static and dynamic inaccuracies in scanning
US6940879B2 (en) 2002-12-06 2005-09-06 New Focus, Inc. External cavity laser with dispersion compensation for mode-hop-free tuning
US7307711B2 (en) * 2004-10-29 2007-12-11 Hitachi Via Mechanics (Usa), Inc. Fluorescence based laser alignment and testing of complex beam delivery systems and lenses
JP4908925B2 (ja) * 2006-02-08 2012-04-04 株式会社日立ハイテクノロジーズ ウェハ表面欠陥検査装置およびその方法
KR20080014385A (ko) 2006-08-11 2008-02-14 동부일렉트로닉스 주식회사 레이저 빔 위치 자동 조정 장치 및 이를 이용한 레이저 빔위치 자동 조정 방법
US8379204B1 (en) 2007-08-17 2013-02-19 Gsi Group Corporation System and method for automatic laser beam alignment
JP5801558B2 (ja) 2008-02-26 2015-10-28 スリーエム イノベイティブ プロパティズ カンパニー 多光子露光システム
US9068952B2 (en) * 2009-09-02 2015-06-30 Kla-Tencor Corporation Method and apparatus for producing and measuring dynamically focussed, steered, and shaped oblique laser illumination for spinning wafer inspection system
JP5134603B2 (ja) * 2009-09-09 2013-01-30 株式会社日立ハイテクノロジーズ 光ビーム調整方法及び光ビーム調整装置
KR20110050821A (ko) 2009-11-09 2011-05-17 삼성전자주식회사 지터를 감소시킬 수 있는 ｄｌｌ회로 및 이를 포함하는 반도체 장치
WO2012023211A1 (ja) 2010-08-20 2012-02-23 富士通株式会社 半導体装置
US8995746B2 (en) 2013-03-15 2015-03-31 KLA—Tencor Corporation Image synchronization of scanning wafer inspection system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060202115A1 (en) * 2005-03-10 2006-09-14 Hitachi Via Mechanics, Ltd. Apparatus and method for beam drift compensation
WO2010146799A1 (ja) * 2009-06-18 2010-12-23 株式会社日立ハイテクノロジーズ 欠陥検査装置および検査方法

Also Published As

Publication number Publication date
CN109075099B (zh) 2023-07-14
SG11201806925PA (en) 2018-11-29
US20170336329A1 (en) 2017-11-23
KR20180132923A (ko) 2018-12-12
IL262231B (en) 2021-06-30
DE112017002293T5 (de) 2019-02-14
US10495579B2 (en) 2019-12-03
WO2017192403A1 (en) 2017-11-09
TWI728104B (zh) 2021-05-21
CN109075099A (zh) 2018-12-21
TW201743048A (zh) 2017-12-16
KR102190345B1 (ko) 2020-12-11
JP6741787B2 (ja) 2020-08-19
JP2019523981A (ja) 2019-08-29
IL262231A (en) 2018-11-29

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