DE69613050T2 - Strahlapparat für geladene Teilchen - Google Patents

Strahlapparat für geladene Teilchen

Info

Publication number
DE69613050T2
DE69613050T2 DE69613050T DE69613050T DE69613050T2 DE 69613050 T2 DE69613050 T2 DE 69613050T2 DE 69613050 T DE69613050 T DE 69613050T DE 69613050 T DE69613050 T DE 69613050T DE 69613050 T2 DE69613050 T2 DE 69613050T2
Authority
DE
Germany
Prior art keywords
charged particles
blasting apparatus
blasting
charged
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69613050T
Other languages
English (en)
Other versions
DE69613050D1 (de
Inventor
Toshiei Kurosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15892332&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69613050(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69613050D1 publication Critical patent/DE69613050D1/de
Publication of DE69613050T2 publication Critical patent/DE69613050T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/282—Determination of microscope properties
    • H01J2237/2826—Calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE69613050T 1995-07-05 1996-06-27 Strahlapparat für geladene Teilchen Expired - Fee Related DE69613050T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07169759A JP3141732B2 (ja) 1995-07-05 1995-07-05 荷電粒子線装置

Publications (2)

Publication Number Publication Date
DE69613050D1 DE69613050D1 (de) 2001-07-05
DE69613050T2 true DE69613050T2 (de) 2002-03-07

Family

ID=15892332

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613050T Expired - Fee Related DE69613050T2 (de) 1995-07-05 1996-06-27 Strahlapparat für geladene Teilchen

Country Status (5)

Country Link
US (1) US5747816A (de)
EP (1) EP0752715B1 (de)
JP (1) JP3141732B2 (de)
KR (1) KR100448036B1 (de)
DE (1) DE69613050T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG52858A1 (en) * 1996-11-07 1998-09-28 Univ Singapore Micromachining using high energy light ions
US6124140A (en) * 1998-05-22 2000-09-26 Micron Technology, Inc. Method for measuring features of a semiconductor device
US6559456B1 (en) * 1998-10-23 2003-05-06 Canon Kabushiki Kaisha Charged particle beam exposure method and apparatus
FR2792065B1 (fr) * 1999-04-09 2001-07-13 Centre Nat Etd Spatiales Installation et procede d'observation de deux specimens identiques
US6583413B1 (en) * 1999-09-01 2003-06-24 Hitachi, Ltd. Method of inspecting a circuit pattern and inspecting instrument
US6718227B1 (en) * 1999-12-16 2004-04-06 Texas Instruments Incorporated System and method for determining a position error in a wafer handling device
JP3671822B2 (ja) 2000-07-26 2005-07-13 株式会社日立製作所 欠陥検査方法および欠陥検査システム
KR100342429B1 (ko) * 2000-10-04 2002-07-03 윤덕용 광 필터링 방법에 의한 직접변조 방식의 메트로 파장분할다중방식 시스템
JP2005116731A (ja) 2003-10-07 2005-04-28 Hitachi High-Technologies Corp 電子ビーム描画装置及び電子ビーム描画方法
US8222600B2 (en) * 2009-05-24 2012-07-17 El-Mul Technologies Ltd. Charged particle detection system and method
US8624199B2 (en) * 2011-10-28 2014-01-07 Fei Company Sample block holder
FR2993988B1 (fr) * 2012-07-27 2015-06-26 Horiba Jobin Yvon Sas Dispositif et procede de caracterisation d'un echantillon par des mesures localisees
EP2896061B1 (de) * 2012-09-14 2023-06-28 Delmic Ip B.V. Integrierte optische inspektionsvorrichtung für geladene teilchen
US10883303B2 (en) 2013-01-07 2021-01-05 WexEnergy LLC Frameless supplemental window for fenestration
US9691163B2 (en) 2013-01-07 2017-06-27 Wexenergy Innovations Llc System and method of measuring distances related to an object utilizing ancillary objects
US8923650B2 (en) 2013-01-07 2014-12-30 Wexenergy Innovations Llc System and method of measuring distances related to an object
US10196850B2 (en) 2013-01-07 2019-02-05 WexEnergy LLC Frameless supplemental window for fenestration
US9845636B2 (en) 2013-01-07 2017-12-19 WexEnergy LLC Frameless supplemental window for fenestration
US9230339B2 (en) 2013-01-07 2016-01-05 Wexenergy Innovations Llc System and method of measuring distances related to an object
DE102014220168B4 (de) * 2014-10-06 2017-10-12 Carl Zeiss Ag Optisches System zur lithografischen Strukturerzeugung und Verfahren zur Bestimmung von Relativkoordinaten
JP6764953B2 (ja) * 2017-02-13 2020-10-07 株式会社日立ハイテク 荷電粒子線装置
CN111247304B (zh) 2017-05-30 2023-01-13 韦克斯能源有限责任公司 用于窗户配列的无框辅助窗户
KR101818406B1 (ko) * 2017-12-05 2018-01-15 한국기초과학지원연구원 복합현미경 장치
CN113379692B (zh) * 2021-06-01 2022-10-21 中科晶源微电子技术（北京）有限公司 校准om和sem坐标关系的方法和装置、设备和存储介质

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2033096B (en) * 1978-10-02 1983-02-09 Jones G Registered writing beam
JPS5795056A (en) * 1980-12-05 1982-06-12 Hitachi Ltd Appearance inspecting process
JPS60201626A (ja) * 1984-03-27 1985-10-12 Canon Inc 位置合わせ装置
JPS6461718A (en) * 1987-09-01 1989-03-08 Nikon Corp Microscope device
JP2909829B2 (ja) * 1989-07-05 1999-06-23 セイコーインスツルメンツ株式会社 位置合わせ機能付複合走査型トンネル顕微鏡
JPH0352178A (ja) 1989-07-20 1991-03-06 Hitachi Maxell Ltd デイスク記録媒体駆動装置
JP3200874B2 (ja) * 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
TW208757B (de) * 1992-01-09 1993-07-01 Samsung Electronics Co Ltd
JPH06224110A (ja) * 1993-01-26 1994-08-12 Fujitsu Ltd 半導体露光装置及び半導体露光方法
JPH07263308A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 電子ビーム露光方法及び装置

Also Published As

Publication number Publication date
US5747816A (en) 1998-05-05
KR100448036B1 (ko) 2004-12-13
DE69613050D1 (de) 2001-07-05
KR970008302A (ko) 1997-02-24
EP0752715A1 (de) 1997-01-08
JP3141732B2 (ja) 2001-03-05
EP0752715B1 (de) 2001-05-30
JPH0922676A (ja) 1997-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee