DE112015006061T5 - Lichtemittierende Vorrichtung - Google Patents
Lichtemittierende Vorrichtung Download PDFInfo
- Publication number
- DE112015006061T5 DE112015006061T5 DE112015006061.8T DE112015006061T DE112015006061T5 DE 112015006061 T5 DE112015006061 T5 DE 112015006061T5 DE 112015006061 T DE112015006061 T DE 112015006061T DE 112015006061 T5 DE112015006061 T5 DE 112015006061T5
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- DE
- Germany
- Prior art keywords
- light
- electrodes
- electrode
- emitting device
- bulking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0012864 | 2015-01-27 | ||
| KR20150012864 | 2015-01-27 | ||
| KR1020150076527A KR102407827B1 (ko) | 2015-01-27 | 2015-05-29 | 발광 소자 |
| KR10-2015-0076527 | 2015-05-29 | ||
| PCT/KR2015/009087 WO2016122076A1 (en) | 2015-01-27 | 2015-08-28 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112015006061T5 true DE112015006061T5 (de) | 2017-10-19 |
Family
ID=56709498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112015006061.8T Pending DE112015006061T5 (de) | 2015-01-27 | 2015-08-28 | Lichtemittierende Vorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| KR (2) | KR102407827B1 (zh) |
| CN (2) | CN110854251B (zh) |
| DE (1) | DE112015006061T5 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018119734A1 (de) * | 2018-08-14 | 2020-02-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst |
| CN114023858A (zh) * | 2021-11-02 | 2022-02-08 | 厦门三安光电有限公司 | 一种发光二极管、发光模块及发光装置 |
| DE102020215562A1 (de) | 2020-12-09 | 2022-06-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements, verfahren zur herstellung elektrischer kontakte und optoelektronisches halbleiterbauelement |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114188471A (zh) * | 2016-09-05 | 2022-03-15 | 首尔伟傲世有限公司 | 芯片级封装发光二极管 |
| JP7096261B2 (ja) | 2017-07-18 | 2022-07-05 | ルーメンス カンパニー リミテッド | 発光ダイオードモジュール製造装置及び方法 |
| WO2019017584A1 (ko) * | 2017-07-18 | 2019-01-24 | 주식회사 루멘스 | 발광다이오드 모듈 제조 장치 및 방법 |
| CN107768491B (zh) * | 2017-10-31 | 2019-11-22 | 江苏新广联半导体有限公司 | 用于手环的MicroLED显示模块制作方法 |
| CN108091753B (zh) * | 2018-01-22 | 2023-08-25 | 扬州大学 | 一种光源元件 |
| KR102066517B1 (ko) * | 2018-06-11 | 2020-01-15 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| WO2019240371A1 (ko) * | 2018-06-11 | 2019-12-19 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| KR102624112B1 (ko) | 2018-10-23 | 2024-01-12 | 서울바이오시스 주식회사 | 플립칩형 발광 다이오드 칩 |
| CN111863853A (zh) * | 2019-04-24 | 2020-10-30 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
| CN110491976A (zh) * | 2019-08-22 | 2019-11-22 | 佛山市国星半导体技术有限公司 | 一种抗水解的倒装led芯片及其制备方法 |
| TWI795790B (zh) | 2021-05-26 | 2023-03-11 | 隆達電子股份有限公司 | 發光元件與應用其之顯示裝置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4810746B2 (ja) * | 2000-03-31 | 2011-11-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子 |
| JP2003273408A (ja) | 2000-07-31 | 2003-09-26 | Nichia Chem Ind Ltd | 発光装置 |
| US7179670B2 (en) * | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
| JP5008263B2 (ja) * | 2005-03-02 | 2012-08-22 | 日亜化学工業株式会社 | 半導体発光素子 |
| US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
| KR101252032B1 (ko) | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
| KR101142965B1 (ko) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| KR101691589B1 (ko) * | 2011-09-16 | 2017-01-02 | 서울바이오시스 주식회사 | 발광 다이오드 및 그것을 제조하는 방법 |
| KR101969334B1 (ko) * | 2011-11-16 | 2019-04-17 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 발광 장치 |
| US9577172B2 (en) | 2013-02-19 | 2017-02-21 | Koninklijke Philips N.V. | Light emitting die component formed by multilayer structures |
| KR102075147B1 (ko) | 2013-06-05 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| US9640729B2 (en) * | 2013-07-03 | 2017-05-02 | Koninklijke Philips N.V. | LED with stress-buffer layer under metallization layer |
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2015
- 2015-05-29 KR KR1020150076527A patent/KR102407827B1/ko active IP Right Grant
- 2015-08-28 DE DE112015006061.8T patent/DE112015006061T5/de active Pending
- 2015-08-28 CN CN201911071816.2A patent/CN110854251B/zh active Active
- 2015-08-28 CN CN201580038935.1A patent/CN106537616B/zh active Active
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2022
- 2022-06-07 KR KR1020220069034A patent/KR102546262B1/ko active IP Right Grant
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018119734A1 (de) * | 2018-08-14 | 2020-02-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst |
| DE102020215562A1 (de) | 2020-12-09 | 2022-06-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements, verfahren zur herstellung elektrischer kontakte und optoelektronisches halbleiterbauelement |
| CN114023858A (zh) * | 2021-11-02 | 2022-02-08 | 厦门三安光电有限公司 | 一种发光二极管、发光模块及发光装置 |
| CN114023858B (zh) * | 2021-11-02 | 2023-07-14 | 厦门三安光电有限公司 | 一种发光二极管、发光模块及发光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106537616B (zh) | 2019-12-03 |
| CN106537616A (zh) | 2017-03-22 |
| KR102546262B1 (ko) | 2023-06-23 |
| KR20160092465A (ko) | 2016-08-04 |
| CN110854251B (zh) | 2023-03-07 |
| KR102407827B1 (ko) | 2022-06-13 |
| CN110854251A (zh) | 2020-02-28 |
| KR20220088382A (ko) | 2022-06-27 |
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