KR102407827B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR102407827B1
KR102407827B1 KR1020150076527A KR20150076527A KR102407827B1 KR 102407827 B1 KR102407827 B1 KR 102407827B1 KR 1020150076527 A KR1020150076527 A KR 1020150076527A KR 20150076527 A KR20150076527 A KR 20150076527A KR 102407827 B1 KR102407827 B1 KR 102407827B1
Authority
KR
South Korea
Prior art keywords
light emitting
electrode
bulk
electrodes
type semiconductor
Prior art date
Application number
KR1020150076527A
Other languages
English (en)
Korean (ko)
Other versions
KR20160092465A (ko
Inventor
채종현
김창연
서대웅
손성수
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to US14/748,149 priority Critical patent/US9543488B2/en
Priority to PCT/KR2015/009087 priority patent/WO2016122076A1/en
Priority to DE112015006061.8T priority patent/DE112015006061T5/de
Priority to CN201580038935.1A priority patent/CN106537616B/zh
Priority to CN201911071816.2A priority patent/CN110854251B/zh
Publication of KR20160092465A publication Critical patent/KR20160092465A/ko
Priority to US15/380,982 priority patent/US9947849B2/en
Priority to US15/954,465 priority patent/US10580950B2/en
Priority to KR1020220069034A priority patent/KR102546262B1/ko
Application granted granted Critical
Publication of KR102407827B1 publication Critical patent/KR102407827B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020150076527A 2014-06-23 2015-05-29 발광 소자 KR102407827B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US14/748,149 US9543488B2 (en) 2014-06-23 2015-06-23 Light emitting device
PCT/KR2015/009087 WO2016122076A1 (en) 2015-01-27 2015-08-28 Light emitting device
DE112015006061.8T DE112015006061T5 (de) 2015-01-27 2015-08-28 Lichtemittierende Vorrichtung
CN201580038935.1A CN106537616B (zh) 2015-01-27 2015-08-28 发光装置
CN201911071816.2A CN110854251B (zh) 2015-01-27 2015-08-28 发光二极管
US15/380,982 US9947849B2 (en) 2014-06-23 2016-12-15 Light emitting device
US15/954,465 US10580950B2 (en) 2014-06-23 2018-04-16 Light emitting device
KR1020220069034A KR102546262B1 (ko) 2015-01-27 2022-06-07 발광 소자

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150012864 2015-01-27
KR20150012864 2015-01-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020220069034A Division KR102546262B1 (ko) 2015-01-27 2022-06-07 발광 소자

Publications (2)

Publication Number Publication Date
KR20160092465A KR20160092465A (ko) 2016-08-04
KR102407827B1 true KR102407827B1 (ko) 2022-06-13

Family

ID=56709498

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020150076527A KR102407827B1 (ko) 2014-06-23 2015-05-29 발광 소자
KR1020220069034A KR102546262B1 (ko) 2015-01-27 2022-06-07 발광 소자

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020220069034A KR102546262B1 (ko) 2015-01-27 2022-06-07 발광 소자

Country Status (3)

Country Link
KR (2) KR102407827B1 (zh)
CN (2) CN110854251B (zh)
DE (1) DE112015006061T5 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114188471A (zh) * 2016-09-05 2022-03-15 首尔伟傲世有限公司 芯片级封装发光二极管
JP7096261B2 (ja) 2017-07-18 2022-07-05 ルーメンス カンパニー リミテッド 発光ダイオードモジュール製造装置及び方法
WO2019017584A1 (ko) * 2017-07-18 2019-01-24 주식회사 루멘스 발광다이오드 모듈 제조 장치 및 방법
CN107768491B (zh) * 2017-10-31 2019-11-22 江苏新广联半导体有限公司 用于手环的MicroLED显示模块制作方法
CN108091753B (zh) * 2018-01-22 2023-08-25 扬州大学 一种光源元件
KR102066517B1 (ko) * 2018-06-11 2020-01-15 주식회사 세미콘라이트 반도체 발광소자
WO2019240371A1 (ko) * 2018-06-11 2019-12-19 주식회사 세미콘라이트 반도체 발광소자
DE102018119734A1 (de) * 2018-08-14 2020-02-20 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst
KR102624112B1 (ko) 2018-10-23 2024-01-12 서울바이오시스 주식회사 플립칩형 발광 다이오드 칩
CN111863853A (zh) * 2019-04-24 2020-10-30 深圳第三代半导体研究院 一种垂直集成单元二极管芯片
CN110491976A (zh) * 2019-08-22 2019-11-22 佛山市国星半导体技术有限公司 一种抗水解的倒装led芯片及其制备方法
DE102020215562A1 (de) 2020-12-09 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements, verfahren zur herstellung elektrischer kontakte und optoelektronisches halbleiterbauelement
TWI795790B (zh) 2021-05-26 2023-03-11 隆達電子股份有限公司 發光元件與應用其之顯示裝置
CN114023858B (zh) * 2021-11-02 2023-07-14 厦门三安光电有限公司 一种发光二极管、发光模块及发光装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2003273408A (ja) 2000-07-31 2003-09-26 Nichia Chem Ind Ltd 発光装置
JP2006245232A (ja) * 2005-03-02 2006-09-14 Nichia Chem Ind Ltd 半導体発光素子
JP2012019217A (ja) 2010-07-08 2012-01-26 Samsung Led Co Ltd 半導体発光素子、半導体発光素子の製造方法、照明装置及びバックライト
US20140361243A1 (en) 2013-06-05 2014-12-11 Lg Innotek Co., Ltd. Light emitting device
WO2015001446A1 (en) * 2013-07-03 2015-01-08 Koninklijke Philips N.V. Led with stress-buffer layer under metallization layer

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101691589B1 (ko) * 2011-09-16 2017-01-02 서울바이오시스 주식회사 발광 다이오드 및 그것을 제조하는 방법
KR101969334B1 (ko) * 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
US9577172B2 (en) 2013-02-19 2017-02-21 Koninklijke Philips N.V. Light emitting die component formed by multilayer structures

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2003273408A (ja) 2000-07-31 2003-09-26 Nichia Chem Ind Ltd 発光装置
JP2006245232A (ja) * 2005-03-02 2006-09-14 Nichia Chem Ind Ltd 半導体発光素子
JP2012019217A (ja) 2010-07-08 2012-01-26 Samsung Led Co Ltd 半導体発光素子、半導体発光素子の製造方法、照明装置及びバックライト
US20140361243A1 (en) 2013-06-05 2014-12-11 Lg Innotek Co., Ltd. Light emitting device
WO2015001446A1 (en) * 2013-07-03 2015-01-08 Koninklijke Philips N.V. Led with stress-buffer layer under metallization layer

Also Published As

Publication number Publication date
CN106537616B (zh) 2019-12-03
CN106537616A (zh) 2017-03-22
KR102546262B1 (ko) 2023-06-23
KR20160092465A (ko) 2016-08-04
CN110854251B (zh) 2023-03-07
DE112015006061T5 (de) 2017-10-19
CN110854251A (zh) 2020-02-28
KR20220088382A (ko) 2022-06-27

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