DE112015001717B4 - Maskenrohling, Phasenverschiebungsmaske und Verfahren zur Herstellung derselben - Google Patents
Maskenrohling, Phasenverschiebungsmaske und Verfahren zur Herstellung derselben Download PDFInfo
- Publication number
- DE112015001717B4 DE112015001717B4 DE112015001717.8T DE112015001717T DE112015001717B4 DE 112015001717 B4 DE112015001717 B4 DE 112015001717B4 DE 112015001717 T DE112015001717 T DE 112015001717T DE 112015001717 B4 DE112015001717 B4 DE 112015001717B4
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- light
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- pattern film
- shielding
- film
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- 230000010363 phase shift Effects 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 238000002834 transmittance Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 42
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- 238000000034 method Methods 0.000 claims description 46
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 41
- 229910052804 chromium Inorganic materials 0.000 claims description 41
- 238000001312 dry etching Methods 0.000 claims description 27
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
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- 229910021344 molybdenum silicide Inorganic materials 0.000 description 37
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 30
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 15
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- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 11
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- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 6
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- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 4
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000012615 high-resolution technique Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013170739 | 2013-08-20 | ||
| JP2014-079690 | 2014-04-08 | ||
| JP2014079690A JP5686216B1 (ja) | 2013-08-20 | 2014-04-08 | マスクブランクス、位相シフトマスク及びその製造方法 |
| PCT/JP2015/052495 WO2015156016A1 (ja) | 2013-08-20 | 2015-01-29 | マスクブランクス、位相シフトマスク及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112015001717T5 DE112015001717T5 (de) | 2016-12-29 |
| DE112015001717B4 true DE112015001717B4 (de) | 2024-06-13 |
Family
ID=52821412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112015001717.8T Active DE112015001717B4 (de) | 2013-08-20 | 2015-01-29 | Maskenrohling, Phasenverschiebungsmaske und Verfahren zur Herstellung derselben |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9971238B2 (https=) |
| JP (2) | JP5686216B1 (https=) |
| CN (1) | CN106133599B (https=) |
| DE (1) | DE112015001717B4 (https=) |
| TW (1) | TWI575305B (https=) |
| WO (1) | WO2015156016A1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9341940B2 (en) * | 2014-05-15 | 2016-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reticle and method of fabricating the same |
| JP6511860B2 (ja) * | 2015-02-27 | 2019-05-15 | 富士通株式会社 | 表示制御システム、グラフ表示方法およびグラフ表示プログラム |
| JP6341129B2 (ja) * | 2015-03-31 | 2018-06-13 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
| US9921467B2 (en) * | 2015-11-30 | 2018-03-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Mask blank and mask and fabrication method thereof |
| CN108351604B (zh) * | 2016-01-27 | 2020-10-30 | 株式会社Lg化学 | 膜掩模、其制备方法、使用膜掩模的图案形成方法和由膜掩模形成的图案 |
| JP6743679B2 (ja) * | 2016-03-02 | 2020-08-19 | 信越化学工業株式会社 | フォトマスクブランク、及びフォトマスクの製造方法 |
| CN108073032B (zh) * | 2016-11-18 | 2021-06-08 | 台湾积体电路制造股份有限公司 | 相位移光掩模的形成方法 |
| JP6642493B2 (ja) * | 2017-03-10 | 2020-02-05 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク |
| JP6791031B2 (ja) * | 2017-06-13 | 2020-11-25 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| CN110770652B (zh) * | 2017-06-14 | 2023-03-21 | Hoya株式会社 | 掩模坯料、相移掩模及半导体器件的制造方法 |
| TWI659262B (zh) * | 2017-08-07 | 2019-05-11 | 日商Hoya股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
| US11086211B2 (en) * | 2017-11-08 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masks and methods of forming the same |
| KR102504179B1 (ko) * | 2017-12-21 | 2023-02-28 | 에스케이하이닉스 주식회사 | 쉐이딩층을 내장한 포토 마스크 및 이를 이용한 패턴 형성 방법 |
| CN111902772A (zh) * | 2018-03-26 | 2020-11-06 | Hoya株式会社 | 掩模坯料、相移掩模及半导体器件的制造方法 |
| WO2020012733A1 (ja) * | 2018-07-09 | 2020-01-16 | 株式会社村田製作所 | 人工水晶部材及びそれを用いた光学素子 |
| JP7214593B2 (ja) | 2019-08-13 | 2023-01-30 | キオクシア株式会社 | フォトマスクの製造方法 |
| TWI707195B (zh) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 相位轉移光罩的製造方法 |
| CN112563440A (zh) * | 2020-12-01 | 2021-03-26 | 京东方科技集团股份有限公司 | 掩膜板及其制备方法、显示面板的制备方法 |
| JP7570255B2 (ja) * | 2021-03-04 | 2024-10-21 | 株式会社エスケーエレクトロニクス | 多階調フォトマスクの製造方法及び多階調フォトマスク |
| KR102465982B1 (ko) * | 2021-07-13 | 2022-11-09 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| CN113608407B (zh) * | 2021-08-18 | 2023-12-05 | 业成科技(成都)有限公司 | 掩膜、其制备方法及曝光方法 |
| CN114415268B (zh) * | 2022-01-28 | 2024-07-12 | 宁波舜宇奥来技术有限公司 | 光学相位板的制作方法 |
| JP2024006265A (ja) * | 2022-07-01 | 2024-01-17 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法及びフォトマスク |
| CN115586697B (zh) * | 2022-08-31 | 2025-04-11 | 睿晶半导体(宁波)有限公司 | 光掩膜版及其制作方法 |
| JP7450784B1 (ja) * | 2023-04-10 | 2024-03-15 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08292550A (ja) | 1995-04-21 | 1996-11-05 | Toppan Printing Co Ltd | 位相シフトマスク及びその製造方法 |
| JP2007241137A (ja) | 2006-03-10 | 2007-09-20 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
| US20100261099A1 (en) | 2006-03-10 | 2010-10-14 | Hiroki Yoshikawa | Photomask blank and photomask making method |
| JP2011232605A (ja) | 2010-04-28 | 2011-11-17 | Hoya Corp | 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法及び多階調フォトマスクの使用方法 |
| DE112014003849T5 (de) | 2013-08-21 | 2016-05-12 | Dai Nippon Printing Co., Ltd. | Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07199447A (ja) * | 1993-12-28 | 1995-08-04 | Sony Corp | 単層ハーフトーン方式位相シフトマスク及びその作製方法 |
| JPH1126355A (ja) * | 1997-07-07 | 1999-01-29 | Toshiba Corp | 露光用マスク及びその製造方法 |
| JP2002251000A (ja) * | 2001-02-26 | 2002-09-06 | Semiconductor Leading Edge Technologies Inc | 位相シフトマスクの製造方法、位相シフトマスク、位相シフトマスクブランクス及び半導体装置の製造方法 |
| US6855463B2 (en) * | 2002-08-27 | 2005-02-15 | Photronics, Inc. | Photomask having an intermediate inspection film layer |
| WO2005124455A1 (ja) * | 2004-06-22 | 2005-12-29 | Hoya Corporation | マスクブランク用透光性基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、半導体装置の製造方法及び液晶表示装置の製造方法、並びに露光用マスクの欠陥修正方法 |
| TW200639576A (en) * | 2005-02-28 | 2006-11-16 | Hoya Corp | Method of manufacturing gray level mask, gray level mask, and gray level mask blank |
| CN102520577B (zh) * | 2005-08-11 | 2014-10-29 | 富士通半导体股份有限公司 | 曝光用掩模、图案复制方法 |
| EP1804119A1 (en) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Method for manufacturing attenuated phase- shift masks and devices obtained therefrom |
| JP4737426B2 (ja) * | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | フォトマスクブランク |
| JP4853684B2 (ja) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| KR101656456B1 (ko) * | 2009-10-30 | 2016-09-12 | 삼성전자주식회사 | 하프톤형 위상반전 블랭크 포토마스크와 하프톤형 위상반전 포토마스크 및 그의 제조방법 |
| JP2011215197A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | フォトマスク及びその製造方法 |
| JP5682493B2 (ja) * | 2010-08-04 | 2015-03-11 | 信越化学工業株式会社 | バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法 |
| JP5464186B2 (ja) * | 2011-09-07 | 2014-04-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP4930736B2 (ja) * | 2011-09-21 | 2012-05-16 | 信越化学工業株式会社 | フォトマスクの製造方法及びフォトマスク |
| JP2014191176A (ja) * | 2013-03-27 | 2014-10-06 | Dainippon Printing Co Ltd | フォトマスクブランクス、フォトマスク及びその製造方法 |
-
2014
- 2014-04-08 JP JP2014079690A patent/JP5686216B1/ja active Active
-
2015
- 2015-01-20 JP JP2015008587A patent/JP6394410B2/ja active Active
- 2015-01-29 WO PCT/JP2015/052495 patent/WO2015156016A1/ja not_active Ceased
- 2015-01-29 US US15/301,900 patent/US9971238B2/en active Active
- 2015-01-29 CN CN201580015667.1A patent/CN106133599B/zh active Active
- 2015-01-29 DE DE112015001717.8T patent/DE112015001717B4/de active Active
- 2015-01-30 TW TW104103190A patent/TWI575305B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08292550A (ja) | 1995-04-21 | 1996-11-05 | Toppan Printing Co Ltd | 位相シフトマスク及びその製造方法 |
| JP2007241137A (ja) | 2006-03-10 | 2007-09-20 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
| US20100261099A1 (en) | 2006-03-10 | 2010-10-14 | Hiroki Yoshikawa | Photomask blank and photomask making method |
| JP2011232605A (ja) | 2010-04-28 | 2011-11-17 | Hoya Corp | 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法及び多階調フォトマスクの使用方法 |
| DE112014003849T5 (de) | 2013-08-21 | 2016-05-12 | Dai Nippon Printing Co., Ltd. | Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI575305B (zh) | 2017-03-21 |
| CN106133599A (zh) | 2016-11-16 |
| JP2015092281A (ja) | 2015-05-14 |
| JP6394410B2 (ja) | 2018-09-26 |
| WO2015156016A1 (ja) | 2015-10-15 |
| CN106133599B (zh) | 2019-09-03 |
| US20170123305A1 (en) | 2017-05-04 |
| TW201539112A (zh) | 2015-10-16 |
| JP2015062049A (ja) | 2015-04-02 |
| US9971238B2 (en) | 2018-05-15 |
| DE112015001717T5 (de) | 2016-12-29 |
| JP5686216B1 (ja) | 2015-03-18 |
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