DE112014001428T5 - Elektrochemische Abscheidungsprozesse für Halbleiterwafer - Google Patents

Elektrochemische Abscheidungsprozesse für Halbleiterwafer Download PDF

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Publication number
DE112014001428T5
DE112014001428T5 DE112014001428.1T DE112014001428T DE112014001428T5 DE 112014001428 T5 DE112014001428 T5 DE 112014001428T5 DE 112014001428 T DE112014001428 T DE 112014001428T DE 112014001428 T5 DE112014001428 T5 DE 112014001428T5
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DE
Germany
Prior art keywords
bath
wafer
voltage
failure
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112014001428.1T
Other languages
German (de)
English (en)
Inventor
Daniel K. Gebregziabiher
John Klocke
Charles Sharbono
Chandru Thambidurai
David J. Erickson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE112014001428T5 publication Critical patent/DE112014001428T5/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112014001428.1T 2013-03-15 2014-02-11 Elektrochemische Abscheidungsprozesse für Halbleiterwafer Withdrawn DE112014001428T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/835,870 US20140262794A1 (en) 2013-03-15 2013-03-15 Electrochemical deposition processes for semiconductor wafers
US13/835,870 2013-03-15
PCT/US2014/015876 WO2014149245A1 (en) 2013-03-15 2014-02-11 Electrochemical deposition processes for semiconductor wafers

Publications (1)

Publication Number Publication Date
DE112014001428T5 true DE112014001428T5 (de) 2015-12-24

Family

ID=51522611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014001428.1T Withdrawn DE112014001428T5 (de) 2013-03-15 2014-02-11 Elektrochemische Abscheidungsprozesse für Halbleiterwafer

Country Status (7)

Country Link
US (1) US20140262794A1 (ko)
KR (1) KR20150132464A (ko)
CN (1) CN105027265A (ko)
DE (1) DE112014001428T5 (ko)
SG (1) SG11201506364YA (ko)
TW (1) TW201442149A (ko)
WO (1) WO2014149245A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10154598B2 (en) * 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
CN107794553B (zh) * 2017-10-27 2019-05-21 电子科技大学 一种电镀添加剂及其制备方法
US10648097B2 (en) * 2018-03-30 2020-05-12 Lam Research Corporation Copper electrodeposition on cobalt lined features
JP7100571B2 (ja) * 2018-12-13 2022-07-13 株式会社荏原製作所 めっき可能な基板の枚数を予測する予測モデルを構築する方法、不具合を引き起こす構成部材を予想するための選択モデルを構築する方法、およびめっき可能な基板の枚数を予測する方法
WO2021066412A1 (ko) * 2019-09-30 2021-04-08 한국재료연구원 도금액에 포함된 첨가제 분해 산물 농도 측정방법{measuring method for concentration of additive breakdown product in plating solution}
KR102223889B1 (ko) * 2019-09-30 2021-03-09 한국재료연구원 도금액에 포함된 첨가제 분해 산물 농도 측정 장치
KR102445228B1 (ko) * 2019-09-30 2022-09-21 한국재료연구원 도금액에 포함된 첨가제 분해 산물 농도 측정방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877923B1 (ko) * 2001-06-07 2009-01-12 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 전해 구리 도금법
JP4434013B2 (ja) * 2002-05-07 2010-03-17 ユニバーシティ オブ サザン カリフォルニア 適合接触マスクめっきを用いてめっき工程を行っている際に堆積の品質を測定する方法および装置
US7291253B2 (en) * 2004-05-04 2007-11-06 Eci Technology, Inc. Detection of an unstable additive breakdown product in a plating bath
TWI328622B (en) * 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
US20070261963A1 (en) * 2006-02-02 2007-11-15 Advanced Technology Materials, Inc. Simultaneous inorganic, organic and byproduct analysis in electrochemical deposition solutions
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
US7776741B2 (en) * 2008-08-18 2010-08-17 Novellus Systems, Inc. Process for through silicon via filing
TWI523976B (zh) * 2010-05-19 2016-03-01 諾菲勒斯系統公司 利用具有雙態抑制劑的電解液之矽穿孔填充
US20120024713A1 (en) * 2010-07-29 2012-02-02 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) with heated substrate and cooled electrolyte

Also Published As

Publication number Publication date
WO2014149245A1 (en) 2014-09-25
US20140262794A1 (en) 2014-09-18
SG11201506364YA (en) 2015-09-29
KR20150132464A (ko) 2015-11-25
CN105027265A (zh) 2015-11-04
TW201442149A (zh) 2014-11-01

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Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee