DE112013004960A5 - Optoelektronisches Bauelement mit integrierter Schutzdiode und Verfahren zu seiner Herstellung - Google Patents
Optoelektronisches Bauelement mit integrierter Schutzdiode und Verfahren zu seiner Herstellung Download PDFInfo
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- DE112013004960A5 DE112013004960A5 DE112013004960.0T DE112013004960T DE112013004960A5 DE 112013004960 A5 DE112013004960 A5 DE 112013004960A5 DE 112013004960 T DE112013004960 T DE 112013004960T DE 112013004960 A5 DE112013004960 A5 DE 112013004960A5
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- optoelectronic component
- protective diode
- integrated protective
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- 230000005693 optoelectronics Effects 0.000 title 1
- 230000001681 protective effect Effects 0.000 title 1
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- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H01L2224/92—Specific sequence of method steps
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/92—Specific sequence of method steps
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
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DE102012218457.0A DE102012218457A1 (de) | 2012-10-10 | 2012-10-10 | Optoelektronisches bauelement und verfahren zu seiner herstellung |
DE102012218457.0 | 2012-10-10 | ||
PCT/EP2013/070944 WO2014056911A1 (de) | 2012-10-10 | 2013-10-08 | Optoelektronisches bauelement mit integrierter schutzdiode und verfahren zu seiner herstellung |
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DE102013111496A1 (de) | 2013-10-18 | 2015-04-23 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
JP6413631B2 (ja) * | 2014-10-28 | 2018-10-31 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
DE102015100575A1 (de) | 2015-01-15 | 2016-07-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
DE102015111574A1 (de) * | 2015-07-16 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
DE102015112280A1 (de) | 2015-07-28 | 2017-02-02 | Osram Opto Semiconductors Gmbh | Bauelement mit einem metallischen Träger und Verfahren zur Herstellung von Bauelementen |
DE102019127731A1 (de) * | 2019-10-15 | 2021-04-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer vielzahl von halbleiterbauelementen, halbleiterbauelement und halbleiterbauteil mit einem solchen halbleiterbauelement |
DE102021118706A1 (de) | 2021-07-20 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und herstellungsverfahren |
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US5343487A (en) * | 1992-10-01 | 1994-08-30 | Optical Concepts, Inc. | Electrical pumping scheme for vertical-cavity surface-emitting lasers |
US6184582B1 (en) * | 1998-04-29 | 2001-02-06 | Lucent Technologies, Inc. | Article comprising a standoff complaint metallization and a method for making same |
DE19854733A1 (de) * | 1998-11-27 | 2000-05-31 | Heidenhain Gmbh Dr Johannes | Abtasteinheit einer Positionsmeßeinrichtung |
JP4296644B2 (ja) * | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | 発光ダイオード |
US6573537B1 (en) * | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
JP4050482B2 (ja) * | 2001-04-23 | 2008-02-20 | 豊田合成株式会社 | 半導体発光装置 |
TWI223890B (en) * | 2004-02-06 | 2004-11-11 | Opto Tech Corp | Light-emitting diode device with multi-lead pins |
TWM273822U (en) * | 2004-06-29 | 2005-08-21 | Super Nova Optoelectronics Cor | Surface mounted LED leadless flip chip package having ESD protection |
US7307287B2 (en) * | 2004-09-15 | 2007-12-11 | Yu-Nung Shen | LED package and method for producing the same |
TWI302382B (en) * | 2004-09-15 | 2008-10-21 | Yu Nung Shen | Light emitting diode package and its packaging method |
US7655997B2 (en) * | 2005-01-26 | 2010-02-02 | Harvatek Corporation | Wafer level electro-optical semiconductor manufacture fabrication mechanism and a method for the same |
KR100714589B1 (ko) * | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
KR100769720B1 (ko) * | 2006-10-16 | 2007-10-24 | 삼성전기주식회사 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드 |
JP2008235792A (ja) | 2007-03-23 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
DE102007062046B4 (de) | 2007-12-21 | 2023-09-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelement sowie Verfahren zum Herstellen einer Mehrzahl von lichtemittierenden Bauelementen |
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102009051129A1 (de) * | 2009-10-28 | 2011-06-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
EP2522176B1 (de) * | 2010-01-05 | 2013-11-20 | Telefonaktiebolaget LM Ericsson (publ) | Verfahren und vorrichtung zur einrichtung einer gateway-sitzung |
JP5202559B2 (ja) * | 2010-03-09 | 2013-06-05 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5281612B2 (ja) | 2010-05-26 | 2013-09-04 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
KR101197778B1 (ko) | 2010-08-09 | 2012-11-06 | 엘지이노텍 주식회사 | Esd 보호용 웨이퍼 레벨 칩 사이즈 패키지 및 이의 제조 방법 |
US9153545B2 (en) | 2010-12-20 | 2015-10-06 | Rohm Co., Ltd. | Light-emitting element unit and light-emitting element package |
JP5869961B2 (ja) | 2012-05-28 | 2016-02-24 | 株式会社東芝 | 半導体発光装置 |
CN104521324B (zh) * | 2012-08-07 | 2017-08-25 | 皇家飞利浦有限公司 | Led电路 |
US8981432B2 (en) * | 2012-08-10 | 2015-03-17 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
US9728698B2 (en) * | 2014-06-03 | 2017-08-08 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
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DE102012218457A1 (de) | 2014-04-10 |
US20170221869A1 (en) | 2017-08-03 |
CN104704632A (zh) | 2015-06-10 |
KR102086188B1 (ko) | 2020-03-06 |
US20150294961A1 (en) | 2015-10-15 |
CN104704632B (zh) | 2017-11-24 |
US9653440B2 (en) | 2017-05-16 |
DE112013004960B4 (de) | 2021-08-19 |
KR20150066538A (ko) | 2015-06-16 |
JP2015532539A (ja) | 2015-11-09 |
US10586788B2 (en) | 2020-03-10 |
WO2014056911A1 (de) | 2014-04-17 |
JP6106755B2 (ja) | 2017-04-05 |
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