DE112013004612B4 - Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Probenpräparationsverfahren - Google Patents

Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Probenpräparationsverfahren Download PDF

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Publication number
DE112013004612B4
DE112013004612B4 DE112013004612.1T DE112013004612T DE112013004612B4 DE 112013004612 B4 DE112013004612 B4 DE 112013004612B4 DE 112013004612 T DE112013004612 T DE 112013004612T DE 112013004612 B4 DE112013004612 B4 DE 112013004612B4
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sample
microprobe
charged particle
probe
particle beam
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DE112013004612.1T
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German (de)
English (en)
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DE112013004612T5 (de
Inventor
c/o HITACHI HIGH-TECHNOLOG Sato Takahiro
c/o HITACHI HIGH-TECHNOLOGI Morikawa Akinari
c/o HITACHI HIGH-TECHNOLOGIES Sekihara Isamu
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2873—Cutting or cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
DE112013004612.1T 2012-10-15 2013-10-09 Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Probenpräparationsverfahren Active DE112013004612B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012227596A JP5887247B2 (ja) 2012-10-15 2012-10-15 荷電粒子線装置および試料作製法
JP2012-227596 2012-10-15
PCT/JP2013/077453 WO2014061524A1 (ja) 2012-10-15 2013-10-09 荷電粒子線装置および試料作製法

Publications (2)

Publication Number Publication Date
DE112013004612T5 DE112013004612T5 (de) 2015-07-02
DE112013004612B4 true DE112013004612B4 (de) 2019-11-21

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DE112013004612.1T Active DE112013004612B4 (de) 2012-10-15 2013-10-09 Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Probenpräparationsverfahren

Country Status (5)

Country Link
US (1) US9362088B2 (enExample)
JP (1) JP5887247B2 (enExample)
CN (1) CN104737266B (enExample)
DE (1) DE112013004612B4 (enExample)
WO (1) WO2014061524A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016002719A1 (ja) * 2014-06-30 2016-01-07 株式会社日立ハイテクサイエンス 自動試料作製装置
JP6231461B2 (ja) * 2014-10-31 2017-11-15 アオイ電子株式会社 試料固定装置
US10410828B2 (en) 2014-12-22 2019-09-10 Carl Zeiss Microscopy, Llc Charged particle beam system and methods
CN105158516B (zh) * 2015-08-20 2018-10-16 上海华力微电子有限公司 一种集成电路分析中透射电镜平面样品的制备方法
CN106226134A (zh) * 2016-07-29 2016-12-14 上海华力微电子有限公司 制备透射电子显微镜样品的方法
JP6931214B2 (ja) * 2017-01-19 2021-09-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP6885576B2 (ja) * 2017-01-19 2021-06-16 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP6974820B2 (ja) * 2017-03-27 2021-12-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226694A1 (de) * 1991-08-22 1993-02-25 Hitachi Ltd Verfahren zum separieren einer probe und verfahren zum untersuchen der separierten probe
US7112790B1 (en) * 2003-08-13 2006-09-26 Cypress Semiconductor Corp. Method to prepare TEM samples
DE102009008166A1 (de) * 2009-02-10 2010-09-02 Carl Zeiss Nts Gmbh Verfahren zur Abscheidung von Schutzstrukturen
US8134124B2 (en) * 2006-10-20 2012-03-13 Fei Company Method for creating S/tem sample and sample structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582479A (ja) 1991-09-19 1993-04-02 Hitachi Ltd 集束イオンビーム装置
JP3547143B2 (ja) * 1997-07-22 2004-07-28 株式会社日立製作所 試料作製方法
JP3401426B2 (ja) 1998-03-23 2003-04-28 日本電子株式会社 Ｆｉｂ−ｓｅｍ装置における試料加工方法およびｆｉｂ−ｓｅｍ装置
JP2001235321A (ja) * 1999-12-13 2001-08-31 Mitsubishi Electric Corp 集束イオンビーム装置，集束イオンビーム装置の制御方法及び接触検出方法
US6452174B1 (en) * 1999-12-13 2002-09-17 Mitsubishi Denki Kabushiki Kaisha Charged particle beam apparatus and method of controlling same
JP4408538B2 (ja) * 2000-07-24 2010-02-03 株式会社日立製作所 プローブ装置
JP4088533B2 (ja) * 2003-01-08 2008-05-21 株式会社日立ハイテクノロジーズ 試料作製装置および試料作製方法
JP2004245660A (ja) 2003-02-13 2004-09-02 Seiko Instruments Inc 小片試料の作製とその壁面の観察方法及びそのシステム
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
JP4996648B2 (ja) * 2009-04-27 2012-08-08 株式会社日立製作所 プローブ装置
CN202189227U (zh) * 2011-07-26 2012-04-11 中国科学院物理研究所 纳米图形化和超宽频电磁特性测量系统

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226694A1 (de) * 1991-08-22 1993-02-25 Hitachi Ltd Verfahren zum separieren einer probe und verfahren zum untersuchen der separierten probe
US7112790B1 (en) * 2003-08-13 2006-09-26 Cypress Semiconductor Corp. Method to prepare TEM samples
US8134124B2 (en) * 2006-10-20 2012-03-13 Fei Company Method for creating S/tem sample and sample structure
EP2104864B1 (en) * 2006-10-20 2015-03-04 FEI Company Method for creating s/tem sample and sample structure
DE102009008166A1 (de) * 2009-02-10 2010-09-02 Carl Zeiss Nts Gmbh Verfahren zur Abscheidung von Schutzstrukturen

Also Published As

Publication number Publication date
US9362088B2 (en) 2016-06-07
US20150255250A1 (en) 2015-09-10
DE112013004612T5 (de) 2015-07-02
WO2014061524A1 (ja) 2014-04-24
JP5887247B2 (ja) 2016-03-16
CN104737266B (zh) 2016-10-26
JP2014082028A (ja) 2014-05-08
CN104737266A (zh) 2015-06-24

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Owner name: HITACHI HIGH-TECH CORPORATION, JP

Free format text: FORMER OWNER: HITACHI HIGH-TECHNOLOGIES CORPORATION, TOKYO, JP

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Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE

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