DE112013000696B4 - Ladungsteilchenstrahlvorrichtung - Google Patents

Ladungsteilchenstrahlvorrichtung Download PDF

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Publication number
DE112013000696B4
DE112013000696B4 DE112013000696.0T DE112013000696T DE112013000696B4 DE 112013000696 B4 DE112013000696 B4 DE 112013000696B4 DE 112013000696 T DE112013000696 T DE 112013000696T DE 112013000696 B4 DE112013000696 B4 DE 112013000696B4
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DE
Germany
Prior art keywords
charged particle
housing
membrane
particle beam
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112013000696.0T
Other languages
German (de)
English (en)
Other versions
DE112013000696T5 (de
Inventor
c/o Hitachi High-Technologies Co Ominami Yusuke
c/o Hitachi Ltd. Ohshima Takashi
c/o Hitachi High-Technologies Ito Hiroyuki
c/o Hitachi High-Technologies C Sato Mitsugu
c/o HITACHI HIGH-TECHNOLOGIES Ito Sukehiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Publication of DE112013000696T5 publication Critical patent/DE112013000696T5/de
Application granted granted Critical
Publication of DE112013000696B4 publication Critical patent/DE112013000696B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H01J2237/164—Particle-permeable windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere
    • H01J2237/2608—Details operating at elevated pressures, e.g. atmosphere with environmental specimen chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2801—Details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE112013000696.0T 2012-02-27 2013-02-15 Ladungsteilchenstrahlvorrichtung Expired - Fee Related DE112013000696B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-039500 2012-02-27
JP2012039500A JP5836838B2 (ja) 2012-02-27 2012-02-27 荷電粒子線装置
PCT/JP2013/053737 WO2013129143A1 (ja) 2012-02-27 2013-02-15 荷電粒子線装置

Publications (2)

Publication Number Publication Date
DE112013000696T5 DE112013000696T5 (de) 2014-10-09
DE112013000696B4 true DE112013000696B4 (de) 2018-08-02

Family

ID=49082344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013000696.0T Expired - Fee Related DE112013000696B4 (de) 2012-02-27 2013-02-15 Ladungsteilchenstrahlvorrichtung

Country Status (6)

Country Link
US (1) US9208995B2 (enExample)
JP (1) JP5836838B2 (enExample)
KR (1) KR101607043B1 (enExample)
CN (1) CN104094373B (enExample)
DE (1) DE112013000696B4 (enExample)
WO (1) WO2013129143A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6035602B2 (ja) * 2012-11-21 2016-11-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料台ユニット、及び試料観察方法
KR101554594B1 (ko) * 2013-12-02 2015-09-22 한국표준과학연구원 하전입자 빔 프로브 형성 장치 및 이의 이용방법
JP6047508B2 (ja) 2014-01-27 2016-12-21 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料画像取得方法、およびプログラム記録媒体
JP6302702B2 (ja) * 2014-02-27 2018-03-28 株式会社日立ハイテクノロジーズ 走査電子顕微鏡および画像生成方法
JP6491890B2 (ja) * 2015-01-21 2019-03-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置
KR101663730B1 (ko) * 2015-03-23 2016-10-10 한국원자력연구원 차등진공을 이용한 하전입자빔 대기인출장치
KR101682522B1 (ko) * 2015-06-02 2016-12-06 참엔지니어링(주) 시료 관찰 방법
KR101756171B1 (ko) * 2015-12-15 2017-07-12 (주)새론테크놀로지 주사 전자 현미경
JP6097863B2 (ja) * 2016-05-16 2017-03-15 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料画像取得方法、およびプログラム記録媒体
KR102271660B1 (ko) 2017-04-11 2021-07-01 주식회사 아도반테스토 노광 장치
WO2018189816A1 (ja) 2017-04-11 2018-10-18 株式会社アドバンテスト 露光装置
JP2021055996A (ja) * 2017-12-13 2021-04-08 株式会社日立ハイテク 電子線照射装置、分析システム
US11621144B2 (en) * 2018-08-03 2023-04-04 Nuflare Technology, Inc. Electron optical system and multi-beam image acquiring apparatus
US10998166B2 (en) * 2019-07-29 2021-05-04 Fei Company System and method for beam position visualization
KR102552225B1 (ko) * 2020-02-04 2023-07-06 (주)새론테크놀로지 주사 전자 현미경
JP7430909B2 (ja) * 2020-08-19 2024-02-14 株式会社ブイ・テクノロジー 集束イオンビーム装置
WO2022048898A1 (en) * 2020-09-07 2022-03-10 Asml Netherlands B.V. Electron-optical assembly comprising electromagnetic shielding
DE102020124306B4 (de) * 2020-09-17 2022-08-11 Carl Zeiss Smt Gmbh Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren
CN112397300B (zh) * 2020-10-26 2022-03-25 南京新康达磁业股份有限公司 一种金属磁粉心粉末的无机绝缘粘接设备及其粘接方法
EP4156227A1 (en) * 2021-09-27 2023-03-29 ASML Netherlands B.V. Charged particle apparatus and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153086A (ja) 2006-12-19 2008-07-03 Jeol Ltd 試料検査装置及び試料検査方法並びに試料検査システム
JP2008262886A (ja) 2007-04-12 2008-10-30 Beam Seiko:Kk 走査型電子顕微鏡装置
US20100096549A1 (en) 2006-12-19 2010-04-22 Jeol Ltd. Sample Inspection Apparatus, Sample Inspection Method and Sample Inspection System
US20100243888A1 (en) 2009-03-26 2010-09-30 Jeol Ltd. Apparatus and Method for Inspecting Samples
US20110168889A1 (en) 2008-07-03 2011-07-14 Dov Shachal Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139842A (ja) * 1988-11-18 1990-05-29 Nikon Corp 電子線装置
JP4528014B2 (ja) * 2004-04-05 2010-08-18 株式会社日立ハイテクノロジーズ 試料検査方法
JP2006147430A (ja) * 2004-11-22 2006-06-08 Hokkaido Univ 電子顕微鏡
TW200639901A (en) * 2005-05-09 2006-11-16 Li Bing Huan Device for operating gas in vacuum or low-pressure environment and for observation of the operation
JP4855135B2 (ja) * 2006-05-15 2012-01-18 株式会社日立ハイテクノロジーズ 差動排気走査形電子顕微鏡
JP2010509709A (ja) * 2006-10-24 2010-03-25 ビー・ナノ・リミテッド インターフェース、非真空環境内で物体を観察する方法、および走査型電子顕微鏡
JP5237728B2 (ja) 2008-08-29 2013-07-17 日本電子株式会社 粒子線装置
CN102197301B (zh) * 2008-09-28 2015-05-06 B-纳诺有限公司 被抽真空的装置和扫描电子显微镜
JP2013020918A (ja) * 2011-07-14 2013-01-31 Hitachi High-Technologies Corp 荷電粒子線装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153086A (ja) 2006-12-19 2008-07-03 Jeol Ltd 試料検査装置及び試料検査方法並びに試料検査システム
US20100096549A1 (en) 2006-12-19 2010-04-22 Jeol Ltd. Sample Inspection Apparatus, Sample Inspection Method and Sample Inspection System
JP2008262886A (ja) 2007-04-12 2008-10-30 Beam Seiko:Kk 走査型電子顕微鏡装置
US20110168889A1 (en) 2008-07-03 2011-07-14 Dov Shachal Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
US20100243888A1 (en) 2009-03-26 2010-09-30 Jeol Ltd. Apparatus and Method for Inspecting Samples

Also Published As

Publication number Publication date
CN104094373A (zh) 2014-10-08
KR101607043B1 (ko) 2016-03-28
JP5836838B2 (ja) 2015-12-24
US20150014530A1 (en) 2015-01-15
DE112013000696T5 (de) 2014-10-09
US9208995B2 (en) 2015-12-08
WO2013129143A1 (ja) 2013-09-06
CN104094373B (zh) 2016-08-17
JP2013175377A (ja) 2013-09-05
KR20140119078A (ko) 2014-10-08

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R083 Amendment of/additions to inventor(s)
R083 Amendment of/additions to inventor(s)
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R081 Change of applicant/patentee

Owner name: HITACHI HIGH-TECH CORPORATION, JP

Free format text: FORMER OWNER: HITACHI HIGH-TECHNOLOGIES CORPORATION, TOKYO, JP

R082 Change of representative

Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee