DE112011101329T5 - Multi-layer SiN für funktional und optische abgestufte Arc-Schichten auf kristallinen Solarzellen - Google Patents

Multi-layer SiN für funktional und optische abgestufte Arc-Schichten auf kristallinen Solarzellen Download PDF

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Publication number
DE112011101329T5
DE112011101329T5 DE112011101329T DE112011101329T DE112011101329T5 DE 112011101329 T5 DE112011101329 T5 DE 112011101329T5 DE 112011101329 T DE112011101329 T DE 112011101329T DE 112011101329 T DE112011101329 T DE 112011101329T DE 112011101329 T5 DE112011101329 T5 DE 112011101329T5
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Germany
Prior art keywords
layer
sublayer
solar cell
passivation
bulk
Prior art date
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DE112011101329T
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German (de)
English (en)
Inventor
Dongwon Choi
Li Xu
Kenneth MacWilliams
Michael P. Stewart
Hemant P. Mungekar
Sunhom Paak
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Applied Materials Inc
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Applied Materials Inc
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Publication of DE112011101329T5 publication Critical patent/DE112011101329T5/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
DE112011101329T 2010-04-13 2011-03-31 Multi-layer SiN für funktional und optische abgestufte Arc-Schichten auf kristallinen Solarzellen Withdrawn DE112011101329T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32375510P 2010-04-13 2010-04-13
US61/323,755 2010-04-13
PCT/US2011/030782 WO2011130017A2 (en) 2010-04-13 2011-03-31 Multi-layer sin for functional and optical graded arc layers on crystalline solar cells

Publications (1)

Publication Number Publication Date
DE112011101329T5 true DE112011101329T5 (de) 2013-02-07

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Family Applications (1)

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DE112011101329T Withdrawn DE112011101329T5 (de) 2010-04-13 2011-03-31 Multi-layer SiN für funktional und optische abgestufte Arc-Schichten auf kristallinen Solarzellen

Country Status (5)

Country Link
US (1) US20110272024A1 (enExample)
JP (1) JP2013524549A (enExample)
CN (1) CN102870236A (enExample)
DE (1) DE112011101329T5 (enExample)
WO (1) WO2011130017A2 (enExample)

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US9494851B2 (en) * 2012-03-28 2016-11-15 Hoya Corporation Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
US9280151B2 (en) * 2012-05-15 2016-03-08 Wafertech, Llc Recipe management system and method
RU2635834C2 (ru) * 2012-08-09 2017-11-16 Син-Эцу Кемикал Ко., Лтд. Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент
US8610230B1 (en) * 2012-11-01 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. HfO2/SiO2-Si interface improvement for CMOS image sensor
US20140174532A1 (en) * 2012-12-21 2014-06-26 Michael P. Stewart Optimized anti-reflection coating layer for crystalline silicon solar cells
CN105518876A (zh) * 2013-07-05 2016-04-20 Gtat公司 用于光伏电池的聚硅氮烷涂层
CN103746005B (zh) * 2014-01-17 2016-08-17 宁波富星太阳能有限公司 双层氮化硅减反射膜
JP6194850B2 (ja) * 2014-05-21 2017-09-13 株式会社島津製作所 薄膜形成装置
CN104091839B (zh) * 2014-07-21 2016-09-07 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜的制造方法
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
CN107958862B (zh) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
CN110178201B (zh) * 2017-01-13 2023-06-16 应用材料公司 用于低温氮化硅膜的方法及设备
KR102578078B1 (ko) * 2017-04-27 2023-09-12 어플라이드 머티어리얼스, 인코포레이티드 3d 낸드 적용을 위한 낮은 유전율의 산화물 및 낮은 저항의 op 스택
CN107275190B (zh) * 2017-06-30 2021-01-01 韩华新能源（启东）有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
CN111492492A (zh) * 2017-11-30 2020-08-04 京瓷株式会社 太阳能电池元件
DE102018121897A1 (de) 2018-09-07 2020-03-12 Infineon Technologies Ag Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren
KR20220000421A (ko) * 2019-05-24 2022-01-03 램 리써치 코포레이션 광학 프로브들 (optical probes) 을 포함하는 전기화학적 증착 시스템
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US11075308B1 (en) 2020-06-19 2021-07-27 Pharos Materials, Inc. Vanadium-containing electrodes and interconnects to transparent conductors
CN112760614B (zh) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 一种多晶pecvd镀膜均匀性优化的方法
CN115838915B (zh) * 2022-11-24 2025-07-08 普乐新能源科技(泰兴)有限公司 一种单晶硅电池pecvd镀膜工艺
CN118039745B (zh) * 2024-04-11 2025-04-08 福建金石能源有限公司 一种背接触电池的制作方法

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Also Published As

Publication number Publication date
JP2013524549A (ja) 2013-06-17
WO2011130017A2 (en) 2011-10-20
CN102870236A (zh) 2013-01-09
WO2011130017A3 (en) 2012-01-19
US20110272024A1 (en) 2011-11-10

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20131001