CN102870236A - 用于结晶太阳能电池上的功能和光学渐变ARC层的多层SiN - Google Patents

用于结晶太阳能电池上的功能和光学渐变ARC层的多层SiN Download PDF

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Publication number
CN102870236A
CN102870236A CN2011800191342A CN201180019134A CN102870236A CN 102870236 A CN102870236 A CN 102870236A CN 2011800191342 A CN2011800191342 A CN 2011800191342A CN 201180019134 A CN201180019134 A CN 201180019134A CN 102870236 A CN102870236 A CN 102870236A
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China
Prior art keywords
sublayer
interface
passivation
solar cell
layer
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Pending
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CN2011800191342A
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English (en)
Chinese (zh)
Inventor
崔东万
迈克尔·P·斯图尔特
徐理
赫曼特·P·芒格卡
森霍姆·帕克
肯尼思·马克威廉姆斯
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CN2011800191342A 2010-04-13 2011-03-31 用于结晶太阳能电池上的功能和光学渐变ARC层的多层SiN Pending CN102870236A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32375510P 2010-04-13 2010-04-13
US61/323,755 2010-04-13
PCT/US2011/030782 WO2011130017A2 (en) 2010-04-13 2011-03-31 Multi-layer sin for functional and optical graded arc layers on crystalline solar cells

Publications (1)

Publication Number Publication Date
CN102870236A true CN102870236A (zh) 2013-01-09

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Country Status (5)

Country Link
US (1) US20110272024A1 (enExample)
JP (1) JP2013524549A (enExample)
CN (1) CN102870236A (enExample)
DE (1) DE112011101329T5 (enExample)
WO (1) WO2011130017A2 (enExample)

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CN103746005A (zh) * 2014-01-17 2014-04-23 宁波富星太阳能有限公司 双层氮化硅减反射膜及其制备方法
CN104091839A (zh) * 2014-07-21 2014-10-08 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜及其制造方法
CN107275190A (zh) * 2017-06-30 2017-10-20 韩华新能源（启东）有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
CN107958862A (zh) * 2016-10-18 2018-04-24 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
CN110178201A (zh) * 2017-01-13 2019-08-27 应用材料公司 用于低温氮化硅膜的方法及设备
CN110235248A (zh) * 2017-04-27 2019-09-13 应用材料公司 用于3d nand应用的低介电常数氧化物和低电阻op堆叠
CN114174562A (zh) * 2019-05-24 2022-03-11 朗姆研究公司 包含光学探针的电化学沉积系统
CN118039745A (zh) * 2024-04-11 2024-05-14 福建金石能源有限公司 一种背接触电池的制作方法

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WO2010009295A2 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
EP2359410A4 (en) 2008-12-10 2014-09-24 Applied Materials Inc IMPROVED VISIBILITY SYSTEM FOR ALIGNMENT OF SCREEN PRINT PATTERNS
US9494851B2 (en) * 2012-03-28 2016-11-15 Hoya Corporation Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
US9280151B2 (en) * 2012-05-15 2016-03-08 Wafertech, Llc Recipe management system and method
RU2635834C2 (ru) * 2012-08-09 2017-11-16 Син-Эцу Кемикал Ко., Лтд. Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент
US8610230B1 (en) * 2012-11-01 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. HfO2/SiO2-Si interface improvement for CMOS image sensor
US20140174532A1 (en) * 2012-12-21 2014-06-26 Michael P. Stewart Optimized anti-reflection coating layer for crystalline silicon solar cells
CN105518876A (zh) * 2013-07-05 2016-04-20 Gtat公司 用于光伏电池的聚硅氮烷涂层
JP6194850B2 (ja) * 2014-05-21 2017-09-13 株式会社島津製作所 薄膜形成装置
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
CN111492492A (zh) * 2017-11-30 2020-08-04 京瓷株式会社 太阳能电池元件
DE102018121897A1 (de) 2018-09-07 2020-03-12 Infineon Technologies Ag Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US11075308B1 (en) 2020-06-19 2021-07-27 Pharos Materials, Inc. Vanadium-containing electrodes and interconnects to transparent conductors
CN112760614B (zh) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 一种多晶pecvd镀膜均匀性优化的方法
CN115838915B (zh) * 2022-11-24 2025-07-08 普乐新能源科技(泰兴)有限公司 一种单晶硅电池pecvd镀膜工艺

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US20090151784A1 (en) * 2007-12-14 2009-06-18 Hsin-Chiao Luan Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells
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US20080268173A1 (en) * 2007-02-27 2008-10-30 White John M Pecvd process chamber backing plate reinforcement
US20090151784A1 (en) * 2007-12-14 2009-06-18 Hsin-Chiao Luan Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells
US20090260685A1 (en) * 2008-04-17 2009-10-22 Daeyong Lee Solar cell and method of manufacturing the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103746005A (zh) * 2014-01-17 2014-04-23 宁波富星太阳能有限公司 双层氮化硅减反射膜及其制备方法
CN103746005B (zh) * 2014-01-17 2016-08-17 宁波富星太阳能有限公司 双层氮化硅减反射膜
CN104091839A (zh) * 2014-07-21 2014-10-08 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜及其制造方法
CN104091839B (zh) * 2014-07-21 2016-09-07 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜的制造方法
CN107958862B (zh) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
CN107958862A (zh) * 2016-10-18 2018-04-24 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
CN110178201A (zh) * 2017-01-13 2019-08-27 应用材料公司 用于低温氮化硅膜的方法及设备
CN110235248A (zh) * 2017-04-27 2019-09-13 应用材料公司 用于3d nand应用的低介电常数氧化物和低电阻op堆叠
CN110235248B (zh) * 2017-04-27 2024-03-26 应用材料公司 用于3d nand应用的低介电常数氧化物和低电阻op堆叠
CN107275190A (zh) * 2017-06-30 2017-10-20 韩华新能源（启东）有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
CN114174562A (zh) * 2019-05-24 2022-03-11 朗姆研究公司 包含光学探针的电化学沉积系统
US12180607B2 (en) 2019-05-24 2024-12-31 Lam Research Corporation Electrochemical deposition system including optical probes
CN118039745A (zh) * 2024-04-11 2024-05-14 福建金石能源有限公司 一种背接触电池的制作方法

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Publication number Publication date
JP2013524549A (ja) 2013-06-17
WO2011130017A2 (en) 2011-10-20
DE112011101329T5 (de) 2013-02-07
WO2011130017A3 (en) 2012-01-19
US20110272024A1 (en) 2011-11-10

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Application publication date: 20130109