DE1107199B - Verfahren zum Zonenschmelzen eines stabfoermigen Koerpers - Google Patents

Verfahren zum Zonenschmelzen eines stabfoermigen Koerpers

Info

Publication number
DE1107199B
DE1107199B DEN17889A DEN0017889A DE1107199B DE 1107199 B DE1107199 B DE 1107199B DE N17889 A DEN17889 A DE N17889A DE N0017889 A DEN0017889 A DE N0017889A DE 1107199 B DE1107199 B DE 1107199B
Authority
DE
Germany
Prior art keywords
rod
zone
bore
activating agent
longitudinal direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN17889A
Other languages
German (de)
English (en)
Inventor
Adrianus Van Wieringen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1107199B publication Critical patent/DE1107199B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DEN17889A 1959-02-17 1960-02-15 Verfahren zum Zonenschmelzen eines stabfoermigen Koerpers Pending DE1107199B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL236245 1959-02-17

Publications (1)

Publication Number Publication Date
DE1107199B true DE1107199B (de) 1961-05-25

Family

ID=19751581

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN17889A Pending DE1107199B (de) 1959-02-17 1960-02-15 Verfahren zum Zonenschmelzen eines stabfoermigen Koerpers

Country Status (8)

Country Link
US (1) US3085031A (da)
BE (1) BE587638A (da)
CH (1) CH389780A (da)
DE (1) DE1107199B (da)
DK (1) DK94963C (da)
FR (1) FR1248809A (da)
GB (1) GB932661A (da)
NL (2) NL236245A (da)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235875B (de) * 1963-11-13 1967-03-09 Siemens Ag Verfahren zur Herstellung von neodymdotierten Calciumfluorid-Einkristallen fuer Laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168491B (da) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2902350A (en) * 1954-12-21 1959-09-01 Rca Corp Method for single crystal growth
US2841559A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235875B (de) * 1963-11-13 1967-03-09 Siemens Ag Verfahren zur Herstellung von neodymdotierten Calciumfluorid-Einkristallen fuer Laser

Also Published As

Publication number Publication date
NL236245A (da)
BE587638A (fr) 1960-08-16
US3085031A (en) 1963-04-09
NL98968C (da)
GB932661A (en) 1963-07-31
CH389780A (de) 1965-03-31
FR1248809A (fr) 1960-12-23
DK94963C (da) 1962-12-10

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