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(en)
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1964-03-17 |
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Method of doping semiconductor |
BE561652A
(da)
*
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1952-08-01 |
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US2798018A
(en)
*
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1952-09-29 |
1957-07-02 |
Carnegie Inst Of Technology |
Method of removing gaseous segregation from metals
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US3060123A
(en)
*
|
1952-12-17 |
1962-10-23 |
Bell Telephone Labor Inc |
Method of processing semiconductive materials
|
DE1056840B
(de)
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1953-02-14 |
1959-05-06 |
Siemens Ag |
Verfahren zum Verteilen von Fremdstoffkomponenten in Halbleiterstaeben durch ein tiegelloses Zonenschmelzverfahren
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US3234009A
(en)
*
|
1953-02-14 |
1966-02-08 |
Siemens Ag |
Method and device for the successive zone melting and resolidifying of extremely pure substances
|
DE1061527B
(de)
*
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1953-02-14 |
1959-07-16 |
Siemens Ag |
Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
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US2972525A
(en)
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1953-02-26 |
1961-02-21 |
Siemens Ag |
Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
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US2836520A
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*
|
1953-08-17 |
1958-05-27 |
Westinghouse Electric Corp |
Method of making junction transistors
|
BE531626A
(da)
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1953-09-04 |
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1953-09-19 |
1960-04-19 |
Siemens Ag |
Method of melting compounds without decomposition
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(en)
*
|
1953-09-30 |
1958-11-18 |
Honeywell Regulator Co |
Method of preparing semi-conductor devices
|
DE1301862B
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1953-10-21 |
1969-08-28 |
Allg Elek Zitaets Ges Aeg Tele |
Verfahren zum Herstellen eines Drifttransistors
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*
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1953-11-27 |
1958-07-29 |
Raytheon Mfg Co |
Process of producing junctions in semiconductors
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*
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1954-01-28 |
1957-05-14 |
Westinghouse Electric Corp |
Method of producing multiple p-n junctions
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DE1175447B
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1954-01-29 |
1964-08-06 |
Licentia Gmbh |
Verfahren zur Herstellung von Halbleiter-kristallen durch tiegelfreies Zonenschmelzen
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DE1188042B
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1954-01-29 |
1965-03-04 |
Siemens Ag |
Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers
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1954-02-15 |
1958-03-11 |
Tung Sol Electric Inc |
Improvement in apparatus for growing single crystals
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DE1178611B
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1954-02-20 |
1964-09-24 |
Siemens Ag |
Vorrichtung zum tiegelfreien Zonenschmelzen
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1954-03-01 |
1961-11-28 |
Rca Corp |
Semi-conductor devices and methods of making same
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GB781795A
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1954-03-12 |
1957-08-28 |
Gen Electric |
Improvements relating to the manufacture of p-n junction devices
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BE536985A
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1954-04-01 |
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1954-05-24 |
1960-12-13 |
Siemens Ag |
Producing semiconductor substances of highest purity
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DE1253235B
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1954-05-25 |
1967-11-02 |
Siemens Ag |
Verfahren zum Herstellen stabfoermiger Halbleiterkristalle
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GB797950A
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1954-06-10 |
1958-07-09 |
Rca Corp |
Semi-conductor alloys
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DE1184971B
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1954-06-22 |
1965-01-07 |
Siemens Ag |
Verfahren zum tiegellosen Schmelzen von stabfoermigen Koerpern aus reinstem Halbleitermaterial
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DE1215649B
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1954-06-30 |
1966-05-05 |
Siemens Ag |
Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
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1954-08-23 |
1958-05-20 |
Motorola Inc |
Semiconductor purification process
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DE1029803B
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1954-09-18 |
1958-05-14 |
Siemens Ag |
Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
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1954-10-01 |
1959-06-30 |
Honeywell Regulator Co |
Crystal growing procedure
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BE542380A
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1954-10-29 |
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1954-12-28 |
1958-03-04 |
Itt |
Mold for semi-conductor ingots
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GB831305A
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1955-01-11 |
1960-03-30 |
Ass Elect Ind |
Improvements relating to the refining of heavy metals by zone melting
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1955-01-13 |
1961-09-12 |
Siemens Ag |
Method of producing differentiated doping zones in semiconductor crystals
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1955-02-23 |
1960-08-23 |
Rauland Corp |
Method of manufacturing semiconductor crystals
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NL204025A
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1955-03-23 |
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1955-03-29 |
1958-02-04 |
Gen Electric |
Semiconductor p-n junction units and method of making the same
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1955-04-04 |
1959-10-06 |
Texas Instruments Inc |
Method for producing single-crystal semiconductor material
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1955-04-27 |
1958-07-01 |
Rca Corp |
Method of doping semi-conductive material
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1955-05-02 |
1957-12-24 |
Rca Corp |
Melt-quench method of making transistor devices
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US2931743A
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1955-05-02 |
1960-04-05 |
Philco Corp |
Method of fusing metal body to another body
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NL112777C
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1955-06-17 |
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1955-07-21 |
1958-02-18 |
Canadian Patents Dev |
Method of preparing semiconductive materials
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BE548227A
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1955-07-22 |
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1955-08-17 |
1958-10-07 |
Sprague Electric Co |
Method of preparing semiconducting crystals having symmetrical junctions
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1955-09-14 |
1960-07-12 |
Siemens Ag |
Method for producing and re-melting compounds having high vapor pressure at the meltig point
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1955-10-06 |
1958-04-08 |
Hughes Aircraft Co |
Method for preparing silicon-germanium alloys
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1955-10-18 |
1962-07-24 |
Honeywell Regulator Co |
Metal purification procedures
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US2835614A
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1955-11-30 |
1958-05-20 |
Raulaud Corp |
Method of manufacturing crystalline material
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1955-12-20 |
1957-10-15 |
Nat Res Dev |
Melting and refining metals
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1956-03-15 |
1957-10-08 |
Rca Corp |
Semi-conductor materials
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1956-06-28 |
1958-09-16 |
Rauland Corp |
Method of manufacturing semiconductor crystals
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NL98843C
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1956-07-02 |
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1956-08-02 |
1961-04-11 |
Shockley William |
Crystal growing apparatus
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1956-08-16 |
1961-03-28 |
Gen Electric |
Semiconductor devices and methods of making same
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1956-09-04 |
1959-11-10 |
Helen E Brennan |
Continuous casting and refining of material
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1956-10-01 |
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NL104388C
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1956-11-28 |
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1956-12-18 |
1961-06-27 |
Gen Electric Co Ltd |
Thermocouples
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1956-12-27 |
1960-04-12 |
Bell Telephone Labor Inc |
Zone-melting with joule heat
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1957-03-07 |
1900-01-01 |
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1957-07-09 |
1960-11-29 |
Pacific Semiconductors Inc |
Crystal pulling apparatus and method
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1957-07-29 |
1961-04-18 |
Rca Corp |
Methods of making semiconductor devices
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1957-10-28 |
1961-06-27 |
Fisher Scientific Co |
Zone refiner
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1957-10-30 |
1961-07-18 |
Imber Oscar |
Apparatus for growing thin crystals
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1957-11-15 |
1960-11-10 |
Siemens Ag |
Stromzufuehrung fuer die bewegliche Heizspule einer tiegelfreien Zonenziehvorrichtung im Innern eines Gefaesses
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NL126240C
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1958-02-19 |
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NL237383A
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1958-04-23 |
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1958-05-21 |
1964-03-05 |
Siemens Ag |
Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
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1958-06-27 |
1961-03-07 |
Ibm |
Semiconductor connection fabrication
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1958-07-25 |
1961-01-03 |
Gen Electric |
Method and apparatus for forming single crystal in cylindrical form
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1958-11-06 |
1962-07-10 |
Texas Instruments Inc |
Photo transistor
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1958-11-12 |
1964-02-18 |
Heraeus Gmbh W C |
Method and apparatus for sintering premolded objects
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1958-11-13 |
1961-08-15 |
Texas Instruments Inc |
Method of zone refining for impurities having segregation coefficients greater than unity
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NL245568A
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1958-11-28 |
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1958-12-24 |
1964-03-05 |
Siemens Ag |
Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
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NL98968C
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1959-02-17 |
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1959-02-20 |
1962-04-24 |
Shockley William |
Process for growing single crystals
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DE1130414B
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1959-04-10 |
1962-05-30 |
Elektronik M B H |
Verfahren und Vorrichtung zum Ziehen von Einkristallen
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DE1227874B
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1959-04-10 |
1966-11-03 |
Itt Ind Ges Mit Beschraenkter |
Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen
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1959-04-20 |
1964-10-27 |
Haskiel R Shell |
Progressive melting and crystallization of synthetic mica
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1959-04-30 |
1962-05-29 |
Ibm |
Semiconductor zone refining and crystal growth
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NL112210C
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1959-04-30 |
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DE1142153B
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1959-05-02 |
1963-01-10 |
Wacker Chemie Gmbh |
Verfahren zum tiegellosen Reinigen und Umkristallisieren von festen Stoffen
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NL239785A
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1959-06-02 |
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1959-08-17 |
1963-08-20 |
Lawrence M Hagen |
Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein
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1959-10-13 |
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1959-10-20 |
1963-01-08 |
Texas Instruments Inc |
Junction growing technique
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1960-06-11 |
1965-12-23 |
Siemens Ag |
Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben
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BE605031A
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1960-06-15 |
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NL266156A
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1960-06-24 |
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1960-06-28 |
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1960-07-04 |
1964-07-21 |
Wacker Chemie Gmbh |
Process for doping materials
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DE1205955B
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1960-11-30 |
1965-12-02 |
Siemens Ag |
Verfahren zum tiegelfreien Zonenschmelzen eines mit Phosphor dotierten Siliciumstabes im Vakuum
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DE1156384B
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1960-12-23 |
1963-10-31 |
Wacker Chemie Gmbh |
Verfahren zum Dotieren von hochreinen Stoffen
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DE1227424B
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1961-03-01 |
1966-10-27 |
Philips Nv |
Verfahren und Vorrichtung zum Zonenschmelzen eines aus einer Metallverbindung bestehenden stabfoermigen Koerpers
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NL276635A
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1961-03-31 |
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DE1419656B2
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1961-05-16 |
1972-04-20 |
Siemens AG, 1000 Berlin u 8000 München |
Verfahren zum dotieren eines stabfoermigen koerpers aus halbleitermaterial, insbesondere aus silicium, mit bor
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1961-10-26 |
1964-12-22 |
Grace W R & Co |
Method of doping semiconductor materials
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1962-01-26 |
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1962-08-28 |
1966-06-07 |
George R Bird |
Method of preparing a tantalum carbide crystal
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1962-10-11 |
1966-04-12 |
Norton Co |
Apparatus for making magnesium oxide crystals
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1963-10-22 |
1967-01-31 |
Dojindo & Co Ltd |
Metal purification process
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1963-11-04 |
1965-02-23 |
Merck & Co Inc |
Process for making semiconductors of predetermined resistivities
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1963-11-12 |
1968-09-19 |
Fuji Electric Co Ltd |
Verfahren zum Entfernen von unerwuenschten Verunreinigungen aus einem Halbleiterkoerpr
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1963-11-21 |
1968-08-29 |
Gen Electric |
Verfahren zur Herstellung eines homogenen halbleitenden Einkristalls
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1964-08-17 |
1966-05-03 |
Joseph R Mares |
Process for freeze-refining a metal
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1964-10-27 |
1965-12-10 |
Commissariat Energie Atomique |
Procédé de fabrication d'alliage germanium-silicium
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1965-03-18 |
1970-01-15 |
Siemens Ag |
Verfahren zum Herstellen einer Faserstruktur in einem Koerper aus einer halbleitenden Verbindung
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1965-06-10 |
1968-03-28 |
Siemens Ag |
Vorrichtung zum tiegelfreien Zonenschmelzen
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1967-11-06 |
1969-12-23 |
Corning Glass Works |
Method of producing a vitreous body by crucibleless fluid zone treatment
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1971-05-10 |
1972-11-16 |
Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) |
Verfahren und Einrichtung zur Beeinflussung der kristallinen Struktur von Legierungen sowie Anwendung dieses Verfahrens
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1972-08-04 |
1975-01-13 |
Boliden Ab |
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1975-03-11 |
1977-06-14 |
Nasa |
Method of growing composites of the type exhibiting the Soret effect
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1976-02-26 |
1977-09-01 |
Siemens Ag |
Verfahren zur reinigung eines germaniumkoerpers
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1976-12-27 |
1977-08-30 |
Monsanto Company |
Apparatus for zone refining
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1978-12-07 |
1979-10-09 |
General Electric Company |
Near-surface thermal gradient enhancement with opaque coatings
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1979-07-31 |
1981-03-24 |
Bell Telephone Laboratories, Incorporated |
Photo-induced temperature gradient zone melting
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1980-01-07 |
1981-08-06 |
Hitachi Ltd |
Control rod
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1980-05-30 |
1982-12-21 |
Bell Telephone Laboratories, Incorporated |
Formation of multilayer dopant distributions in a semiconductor
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1981-11-18 |
1983-07-19 |
Bell Telephone Laboratories, Incorporated |
Solidification of molten materials
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1983-03-31 |
1984-10-04 |
Bayer Ag, 5090 Leverkusen |
Bandfoermige folien aus metallen, verfahren und vorrichtung zu deren herstellung sowie ihre verwendung
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1985-08-22 |
1990-02-13 |
Inco Alloys International, Inc. |
Process for producing single crystals
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1985-11-22 |
1987-09-01 |
Cominco Ltd. |
Purification of Cd and Te by zone refining
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1990-06-14 |
2001-07-11 |
アジレント・テクノロジーズ・インク |
感光素子アレイの製造方法
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1990-11-21 |
2000-09-12 |
Energie Atomique Du Canada |
Methode de fabrication acceleree de fils ou rubans de ceramique supraconductrice
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1995-06-16 |
2004-10-05 |
Phoenix Scientific Corporation |
Binary and ternary crystal purification and growth method and apparatus
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1995-06-16 |
1999-11-30 |
Optoscint, Inc. |
Continuous crystal plate growth process and apparatus
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1999-08-10 |
2002-06-11 |
Optoscint, Inc. |
Crystal growth employing embedded purification chamber
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2004-06-15 |
2010-06-02 |
Infineon Technologies Ag |
Verfahren zur Herstellung einer niederohmigen Anschlusselektrode als vergrabene metallische Schicht in einem Halbleiterkörper für ein Halbleiterbauelement
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2006-08-30 |
2008-03-06 |
Norsk Hydro Asa |
Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon
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2021-01-06 |
Tdk株式会社 |
磁気抵抗効果素子およびホイスラー合金
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