NL168491B - - Google Patents

Info

Publication number
NL168491B
NL168491B NL6917760.A NL168491DA NL168491B NL 168491 B NL168491 B NL 168491B NL 168491D A NL168491D A NL 168491DA NL 168491 B NL168491 B NL 168491B
Authority
NL
Netherlands
Application number
NL6917760.A
Original Assignee
Roussel-Uclaf, Societe Anonyme Te Parijs.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL168491B publication Critical patent/NL168491B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/02Other methods of shaping glass by casting molten glass, e.g. injection moulding
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/06Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in pot furnaces
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00General methods of reducing to metals
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/10Controlling or regulating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/925Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
NL6917760.A 1951-11-16 NL168491B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US256791A US2739088A (en) 1951-11-16 1951-11-16 Process for controlling solute segregation by zone-melting

Publications (1)

Publication Number Publication Date
NL168491B true NL168491B (da)

Family

ID=22973593

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6917760.A NL168491B (da) 1951-11-16

Country Status (7)

Country Link
US (1) US2739088A (da)
BE (1) BE510303A (da)
CH (1) CH323989A (da)
DE (2) DE1135671B (da)
FR (1) FR1065523A (da)
GB (2) GB769674A (da)
NL (1) NL168491B (da)

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US2835614A (en) * 1955-11-30 1958-05-20 Raulaud Corp Method of manufacturing crystalline material
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
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US2852420A (en) * 1956-06-28 1958-09-16 Rauland Corp Method of manufacturing semiconductor crystals
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US2912321A (en) * 1956-09-04 1959-11-10 Helen E Brennan Continuous casting and refining of material
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US2990439A (en) * 1956-12-18 1961-06-27 Gen Electric Co Ltd Thermocouples
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
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US2990257A (en) * 1957-10-28 1961-06-27 Fisher Scientific Co Zone refiner
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US2996374A (en) * 1958-11-13 1961-08-15 Texas Instruments Inc Method of zone refining for impurities having segregation coefficients greater than unity
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US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
DE1130414B (de) * 1959-04-10 1962-05-30 Elektronik M B H Verfahren und Vorrichtung zum Ziehen von Einkristallen
DE1227874B (de) * 1959-04-10 1966-11-03 Itt Ind Ges Mit Beschraenkter Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen
US3154381A (en) * 1959-04-20 1964-10-27 Haskiel R Shell Progressive melting and crystallization of synthetic mica
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
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JP3186096B2 (ja) * 1990-06-14 2001-07-11 アジレント・テクノロジーズ・インク 感光素子アレイの製造方法
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WO2008026931A1 (en) * 2006-08-30 2008-03-06 Norsk Hydro Asa Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon
JP6806199B1 (ja) * 2019-08-08 2021-01-06 Tdk株式会社 磁気抵抗効果素子およびホイスラー合金

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Also Published As

Publication number Publication date
GB769673A (en) 1957-03-13
CH323989A (de) 1957-08-31
GB769674A (en) 1957-03-13
US2739088A (en) 1956-03-20
BE510303A (da)
DE1032555B (de) 1958-06-19
FR1065523A (fr) 1954-05-26
DE1135671B (de) 1962-08-30

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