DE1090329B - Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor - Google Patents

Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor

Info

Publication number
DE1090329B
DE1090329B DES59705A DES0059705A DE1090329B DE 1090329 B DE1090329 B DE 1090329B DE S59705 A DES59705 A DE S59705A DE S0059705 A DES0059705 A DE S0059705A DE 1090329 B DE1090329 B DE 1090329B
Authority
DE
Germany
Prior art keywords
zone
junction
concentration
emitter
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES59705A
Other languages
German (de)
English (en)
Inventor
Dr Richard Wiesner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL242787D priority Critical patent/NL242787A/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES59705A priority patent/DE1090329B/de
Priority to FR802428A priority patent/FR1232137A/fr
Priority to CH7763459A priority patent/CH379641A/de
Priority to GB3027859A priority patent/GB906036A/en
Publication of DE1090329B publication Critical patent/DE1090329B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
DES59705A 1958-09-05 1958-09-05 Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor Pending DE1090329B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL242787D NL242787A (fi) 1958-09-05
DES59705A DE1090329B (de) 1958-09-05 1958-09-05 Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor
FR802428A FR1232137A (fr) 1958-09-05 1959-08-08 Dispositif à semi-conducteurs, à émetteur de rendement élevé
CH7763459A CH379641A (de) 1958-09-05 1959-09-01 Halbleitervorrichtung mit mindestens einem als Emitter wirksamen pn-Übergang
GB3027859A GB906036A (en) 1958-09-05 1959-09-04 Improvements in or relating to semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59705A DE1090329B (de) 1958-09-05 1958-09-05 Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor

Publications (1)

Publication Number Publication Date
DE1090329B true DE1090329B (de) 1960-10-06

Family

ID=7493517

Family Applications (1)

Application Number Title Priority Date Filing Date
DES59705A Pending DE1090329B (de) 1958-09-05 1958-09-05 Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor

Country Status (5)

Country Link
CH (1) CH379641A (fi)
DE (1) DE1090329B (fi)
FR (1) FR1232137A (fi)
GB (1) GB906036A (fi)
NL (1) NL242787A (fi)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2364753A1 (de) * 1972-12-29 1974-07-18 Sony Corp Halbleitervorrichtung
DE2513458A1 (de) * 1974-03-28 1975-10-02 Sony Corp Halbleiterbauelement
DE2515577A1 (de) * 1974-04-10 1975-10-23 Sony Corp Schaltungsanordnung mit einem transistor hoher eingangsimpedanz
AT374053B (de) * 1974-04-10 1984-03-12 Sony Corp Differenzverstaerker mit steuerbarer verstaerkung
AT374052B (de) * 1974-04-04 1984-03-12 Sony Corp Differenzverstaerker mit steuerbarer verstaerkung
FR2640813A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical
FR2640814A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
JPS57658B2 (fi) * 1974-04-16 1982-01-07
JPS5711147B2 (fi) * 1974-05-07 1982-03-02
JPS5712303B2 (fi) * 1974-05-09 1982-03-10
JPS5648983B2 (fi) * 1974-05-10 1981-11-19
JPS5646267B2 (fi) * 1974-05-10 1981-10-31
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509910A (fi) * 1951-05-05
DE814487C (de) * 1948-06-26 1951-09-24 Western Electric Co Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
FR1137424A (fr) * 1954-07-21 1957-05-28 Philips Nv Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron
FR1143171A (fr) * 1954-11-30 1957-09-27 Philips Nv Diode semi-conductrice
FR1153884A (fr) * 1955-04-21 1958-03-28 Philips Nv Système d'électrodes à couche d'arrêt, en particulier transistron ou diode à cristal

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814487C (de) * 1948-06-26 1951-09-24 Western Electric Co Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
BE509910A (fi) * 1951-05-05
FR1137424A (fr) * 1954-07-21 1957-05-28 Philips Nv Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron
FR1143171A (fr) * 1954-11-30 1957-09-27 Philips Nv Diode semi-conductrice
FR1153884A (fr) * 1955-04-21 1958-03-28 Philips Nv Système d'électrodes à couche d'arrêt, en particulier transistron ou diode à cristal

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2364753A1 (de) * 1972-12-29 1974-07-18 Sony Corp Halbleitervorrichtung
DE2513458A1 (de) * 1974-03-28 1975-10-02 Sony Corp Halbleiterbauelement
AT374052B (de) * 1974-04-04 1984-03-12 Sony Corp Differenzverstaerker mit steuerbarer verstaerkung
DE2515577A1 (de) * 1974-04-10 1975-10-23 Sony Corp Schaltungsanordnung mit einem transistor hoher eingangsimpedanz
AT374053B (de) * 1974-04-10 1984-03-12 Sony Corp Differenzverstaerker mit steuerbarer verstaerkung
FR2640813A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical
FR2640814A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical
WO1990007194A1 (en) * 1988-12-16 1990-06-28 N.V. Philips' Gloeilampenfabrieken Integrated circuit comprising a vertical transistor
WO1990007193A1 (en) * 1988-12-16 1990-06-28 N.V. Philips' Gloeilampenfabrieken Semiconductor device comprising an integrated circuit having a vertical transistor
US5089873A (en) * 1988-12-16 1992-02-18 U.S. Philips Corp. Integrated circuit having a vertical transistor

Also Published As

Publication number Publication date
FR1232137A (fr) 1960-10-05
GB906036A (en) 1962-09-19
NL242787A (fi)
CH379641A (de) 1964-07-15

Similar Documents

Publication Publication Date Title
DE1090329B (de) Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor
DE2554296C2 (de) Integrierte C MOS-Schaltungsanordnung
DE1439922B2 (de) Schaltbares halbleiterbauelement mit einem pnpn oder einem npnp halbleiterkoerper
DE3011484A1 (de) Optisch steuerbarer, mit statischer induktion arbeitender thyristor
DE69121860T2 (de) Überspannungen zwischen ausgewählten Grenzen begrenzende Schutzschaltung und deren monolitsche Integration
DE1090331B (de) Strombegrenzende Halbleiteranordnung, insbesondere Diode, mit einem Halbleiterkoerper mit einer Folge von wenigstens vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps
DE2204853C2 (de) Schaltungsanordnung zum Zünden eines steuerbaren bidirektionalen Thyristors
DE1539079A1 (de) Planartransistor
EP0106059A1 (de) Halbleiterschalter mit einem abschaltbaren Thyristor
DE1614844B2 (de) Bistabile, durch impulse steuerbare halbleitervorrichtung
DE2024824A1 (de) Feldeffekttransistor
DE1216435B (de) Schaltbares Halbleiterbauelement mit vier Zonen
DE1764794A1 (de) Integrierte Halbleiterschaltung
DE1062821B (de) Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand
DE2238564B2 (de) Thyristor
DE1212221B (de) Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper und zwei sperrfreien Basiselektroden
DE2614580C2 (de) "I↑2↑L-Schaltung"
DE2418560A1 (de) Halbleitervorrichtung
DE1208408B (de) Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
EP0173275B1 (de) Lichtzündbarer Thyristor
DE2458735C2 (de) Transistor mit einem hohen Stromverstärkungsfaktor bei kleinen Kollektorströmen
DE2742361C2 (fi)
DE2210386A1 (de) Thyristor
DE2953403C2 (de) Hochleistungs-Schalter unter Verwendung eines torgesteuerten Diodenschalters
DE1207010B (de) Flaechentransistor mit einem Halbleiterkoerper mit vier Zonen abwechselnd entgegengesetzten Leitungstyps, Verfahren zum Herstellen und Schaltung solcher Flaechentransistoren